可变电容

GB/T6254-1986电子设备用C类预调可变电容器类型规范

Type specification for variable preset capacitors & Type C in electronic equipments

频带展宽可变电容器

Spread variable capacitor citizens ' band

RFMEMS可变电容及压控振荡器的研究

Study of RF MEMS Variable Capacitor and Voltage Controlled Oscillator

一种用于RFMEMS移相器及开关可变电容的复合微桥膜结构

A novel composite membrane bridge structure for RF MEMS phase shifter and switched tunable capacitor

提出了一种高Q值、宽调节范围的凹型结构微机械可变电容。

A concave shape micromachined variable capacitor was presented which has high Q and wide tuning ranges .

新颖的双间隔RFMEM可变电容的设计与模拟

Design and Simulation of a Novel Two-gap RF MEM Variable Capacitor

静电驱动的MEMS可变电容器

MEMS Variable Capacitor by Electrostatic Driving

平板式可变电容器是MEMS重要的机电耦合部件，建立其宏模型是MEMS系统级快速仿真的迫切需求。

Electrostatic gap is an important functional component of MEMS and its macromodel is required for MEMS system-level design .

UHF调谐器可变电容器设计计算

Design and Calculation of Variable Capacitor for UHF Tuners

然而，利用标准的集成电路工艺实现高Q值的片上可变电容是非常困难的。

However , it is very difficult to realize a high-Q on-chip variable capacitor by standard integrated circuit ( IC ) process .

基于SOI的可变电容的特性分析

Characteristic Analysis of Varactors Based on SOI

因此，迫切需要能与VCO电路单片集成的高Q值的可变电容。

Therefore , a high-Q on-chip variable capacitor is needed stringently which can be integrated monolithically with VCO circuit .

目前在射频领域中运用的MEMS器件主要有微机械开关、微机械电感、可变电容、微机械谐振器、振荡器及滤波器等。

Now among the main RF MEMS devices are μ mechanical RF switches , tunable μ mechanical capacitors ,μ machined inductance and vibrating micromechanical resonators .

VCO的调谐能力通常由可变电容来实现，要获得低相位噪声，需要高Q值的片上可变电容。

The tunability of VCO is normally provided by a variable capacitor . Achieving low phase noise requires a high-Q on-chip variable capacitor .

在这2个环路中，调谐元件采用的都是与标准CMOS工艺兼容的MOS可变电容，以实现单片集成和连续调节。

In both loops , MOS varactors which are compatible with standard CMOS processing were applied as tunable elements to realize monolithic and sequential tuning .

本文还提及了互补MOS（CMOS）的基本工艺和部分与可变电容有关的工艺以及射频器件的测试方法。

In addition , some basic measurement techniques about varactor , standard Compensation-MOS ( CMOS ) process and the detailed process for varactor are described in details .

阶跃单模光纤的色散一种新型开关阶跃电容实现了频率调谐功能，该电容的调谐电容是传统反型MOS管可变电容的146%。

The dispersion in step-index single-mode fibers The tuning capacitance of the proposed switched step capacitors is 146 % of the conventional inversion-MOS varactors ' .

基于0.18μm工艺，采用片上电感和可变电容，设计了一种基于开关调谐电容结构的宽可调范围的分段线性互补型交叉耦合CMOS集成压控振荡器。

A piecewise linear , wide tuning-range , complementary cross-coupled integrated voltage-controlled oscillator was designed based on tuning-capacitance structure using on-chip inductor and varactor in 0.18 μ m CMOS process .

尤其是高品质因数电感和可变电容等无源器件的片上实现，让电感电容压控振荡器（LCVCO）的单片集成已成为可能。

Especially , the realization of high quality on-chip passive elements such as inductors and varactors make on-chip implementation of LC voltage-controlled oscillator ( VCO ) possible .

使用电容阵列以保持LC谐振回路中可变电容的小尺寸，是同时实现宽调谐范围和低频率敏感性的最有效方法之一。

One of the most effective ways to achieve wide tuning range and low tuning sensitivity at the same time is to use a switched-capacitor bank while keeping the varactor size small in LC tank .

发光二极管p-n结的结电容在特定的正向电压范围内等效于可变电容。

We further propose that the capacitance of the p-n junction in an LED is equivalent to the variable capacitance in a certain range of forward voltage .

通过优化集成电感的设计，同时采用NMOS管和开关电容阵列作为可变电容，使该设计具有较低的相位噪声和较宽的调谐范围。

Through inductor optimization , the VCO has a low phase noise and a wide tuning range with switched capacitor array and NMOS varactor .

在4V的驱动电压下可变电容值变化3.18：1即218%，1GHz时的Q值可达103。

The tuning ratio is about 3.18:1 , namely 218 % , under 4V driving voltage . The Q factor is about 103 at 1 GHz .

并与采用GaAs超突变结变容二极管的VCO器件进行了比较，说明由于集成了RFMEMS可变电容，使得在RFMEMS可变电容的机械谐振频率近端时，MEMSVCO的相位噪声特性发生了改变。

And moreover , the performance of SSB phase noise is compared with VCO which is integrated with GaAs hyperabrupt junction varactor . It is explained that the characteristic of SSB phase noise changes close to the mechanical resonant frequency of RF MEMS variable capacitor .

以未预失真条件信号、个同样的标准，可变电容CV1赋予权利去校正已传输通道波段的倾斜度。

IF signal not pre-distorted , the variable capacity CV1 enables to correct the inclination of the transmitted pass band .

设计了一种可用于射频（RF）通信系统中的MEM平行板可变电容，采用新颖的双间隔（two-gap）结构、金属铝极板、折叠Y形支撑和厚度不均的可动极板。

A MEM variable capacitor for RF communications systems was presented . The capacitor was designed using a novel two-gap structure , using aluminum as the capacitor electrode material , using Y shape beams as the suspend electrode spring , and using a asymmetry thickness plate as the suspend electrode .

可变电容式压力传感器可变压处理器上硬实时系统的作业调度

Job Scheduling of Hard Real-Time System on Variable Voltage Processors

表示电容器。可指定固定或可变电容器。

Represents a capacitor . Fixed or variable capacitor can be specified .

GB/T12775-1991电子设备用圆片型瓷介预调可变电容器总规范

Generic specification for disc-style ceramic dielectric variable pre-set capacitors in electronic equipment

一种射频微机械可变电容的设计与优化

Design and Optimization of a RF MEMS Variable Capacitor