半绝缘砷化镓

半绝缘砷化镓Hall测量中的若干问题

Some problems in Hall measurement of SI-GaAs

半绝缘砷化镓单晶中位错胞状结构和微缺陷的研究

Study on Si-GaAs Crystal Dislocation Cell Structure and Microdefects

用x射线形貌研究半绝缘砷化镓单晶胞状结构

Study on the cell structure in semi-insulation gallium arsenide

半绝缘砷化镓单晶中AB微缺陷的定量研究

Quantitative study of AB microscopic defects in semi-insulating GaAs single crystals

采用B2O3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。

The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method ( LEC ) .

半绝缘砷化镓EPR谱的异常退火特性

Unusual Annealing Behavior of EPR Spectra in Semi-Insulating GaAs

半绝缘砷化镓中的低频振荡及其对FET噪声性能的影响

Low - frequency oscillation in semi - insulating GaAs and their effect on FET noise

建立了绝缘电阻大于1013Ω和温度起伏小于0.1℃的半绝缘砷化镓Hall测量装置。

A Hall measurement system for SI GaAs has been built , in which the insulation resistance larger than 10 13 Ω and temperature fluctuation less than 0.1 ℃ .

研究了单（Si+）双（Si+/As+）离子注入半绝缘砷化镓（SI-GaAs）电激活的均匀性。

The active uniformity of SI GaAs by Si + / As + implantation was studied .

通过化学腐蚀、金相显微观察、透射电子显微镜、扫描电镜和X射线异常透射形貌等技术，研究了半绝缘砷化镓单晶中的位错和微缺陷。

Dislocations and micro-defects in semi-insulating gallium arsenide ( SI-GaAs ) are investigated by means of chemical etching , scanning electron microscopy ( SEM ), X-ray diffraction topography ( XRT ), transmission electron microscopy ( TEM ) and energy spectroscopy ( EDX ) .

作为基础半导体材料的半绝缘砷化镓（SI-GaAs）市场需求很大，其相关电子器件已应用到光通讯、卫星通讯、网络技术等诸多领域。

SI-GaAs have expansive market demand . The correlation devices have been used to light communication and secondary planet communication and so on .

掺铟低位错密度的半绝缘砷化镓

Low Dislocation Density SI-GaAs by Doping with Isoelectronic Impurity - In

半绝缘砷化镓的热激电流谱测量

The measurement of thermally stimulated current in SI-GaAs

半绝缘砷化镓中子嬗变掺杂行为研究

Doping Behavior of Semi-insulating GaAs by Neutron Transmutation

掺铬半绝缘砷化镓材料的硅离子注入

Silicon implantation in semi - insulating GaAs substrate

半绝缘砷化镓材料的铍离子注入

Beryllium Ion Implantation in Semi-insulating GaAs Substrates

半绝缘砷化镓的热反型研究

Study of Thermal Conversion in Semiinsulating GaAs

掺等电子杂质铟生长了低位错密度的半绝缘砷化镓晶体。

Low dislocation density SI-GaAs crystals have been pulled from melts by doping with iso-electronic impurity-In .

半绝缘砷化镓单晶中的晶体缺陷

Crystal Defects in Semi-Insulation Gallium Arsenide

为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。

To obtain high quality semi-insulating GaAs wafers , it is necessary to decrease microscopic defect density .

把半绝缘砷化镓晶片从实验室范围发展到市场导向的规模生产已变成可能。

This development was possible by transition from laboratory scale to market-oriented mass production of semi-insulating GaAs wafers .

本文介绍了三电极保护法半绝缘砷化镓材料电阻率二维分布自动测量系统，在实际应用中，温度波动、异常数据对测量结果产生严重影响，为此我们提出了一些措施。

An automatic system for the measurement of two-dimensional distribution of resistivity of semi-insulating gallium arsenide wafer with three electrode guard method is presented in this paper . In actual application , the fluctuation of temperature and abnormal data obtained would influence the results of the measurement seriously .