半导体材料

MM跨国公司半导体材料部中国市场营销战略研究

Marketing Strategy Studying of Semiconductor Material Division , MM China

ZnO薄膜是一种新型的、性能优良的半导体材料。

ZnO thin film is a novel semiconductor material with excellent performance .

第三代半导体材料在LED产业中的发展和应用

Development and Application of the 3rd-generation-semiconductors in LED Industry

NiO是具有典型3d电子结构的金属氧化物，也是一种P型半导体材料。

NiO is a p-type transparent conductive oxide with typical 3d electron structure .

MM半导体材料部作为一家著名跨国公司的事业部，在中国面临内部变革的压力、外部经营环境变化而带来新的机遇和挑战，因此公司需要重新规划和调整其中国市场营销战略。

MM Semi Material Division belongs to one famous multi-national company . marketing & sales strategy ;

ZnO是一种具有纤锌矿晶体结构的直接宽带隙半导体材料。

ZnO is a wide direct-gap semiconductor with a hexagonal crystal structure of wurtzite .

Mn掺杂的ZnO基稀磁半导体材料由于具有独特的特性而受到人们广泛的关注。

Mn-doped ZnO diluted magnetic semiconductor has attracted widely attention for its novel properties .

水热法合成ZnO基稀磁半导体材料

Hydrothermal Synthesis of the ZnO Based DMS

SiC半导体材料及其器件应用

Techniques of SiC Semiconductor Materials and Devices

中子对Si及GaAs半导体材料位移损伤的数值计算

The numerical calculation on displacement damage of Si and GaAs semiconductor material irradiated by neutron

（Ba，Pb）TiO3系高温PTC半导体材料研究

A study of semiconductive ( Ba , Pb ) TiO_3 PTC materials

反应堆中子活化-多元素亚化学计量分离法测定生物和半导体材料中的Cu，Na，Au

Determination of cu , Na and Au in biological materials and semicon-ductors by neutron activation-sub-stoichiometric multielement separation

ZnO薄膜作为一种新型宽带隙半导体材料，有其广泛应用。

As a new type of wide bandgap semiconductor material , ZnO thin film is widely used .

ZnO是一种重要的功能材料和新型的Ⅱ-Ⅵ族宽禁带半导体材料。

Zinc oxide is an important functional and navel material of ⅱ - ⅵ wide bandgap semiconductor .

SEMI半导体材料标准的分析

Analyse the standard of SEMI semiconductor material

研究和实现了采用面阵CCD器件的半导体材料应力测试仪。

An instrument based on area array CCD devices for measuring stresses in semiconductor materials is studied and realized .

表面光电压谱（SPS）在有机半导体材料研究中的应用

The application of the surface photovoltage spectroscope in the organic semiconductor

ZnO是新一代宽禁带、直接带隙的多功能Ⅱ-Ⅵ族半导体材料。

ZnO is a new generational multifunctional II - VI compound semiconductor with a wide and direct band gap .

本文首先简要介绍了半导体材料以及量子点的相关知识，同时也展现了ZnO基和GaN基量子点中类氢杂质态的研究现状。

Meanwhile , the hydrogenic impurity states in the ZnO-based and GaN-based quantum dots have also been presented .

这说明单独的Mn掺杂ZnO难以形成具有室温铁磁性的稀磁半导体材料。

It shows that Mn single doped ZnO is difficult to form a diluted magnetic semiconductor with room temperature ferromagnetic .

硅衬底ZnO/GaN半导体材料生长及LED器件寿命研究LED半导体照明光源在情景照明中的应用

Growth Study of GaN / ZnO Films on Si Substrate and Lifetime Test of LED Devices ; Application of LED Semiconductor Light Source in Scene Illumination

准分子激光直接刻蚀InP半导体材料

Etching of Semiconductor InP by APD of Direct Eximer Laser

GaN系半导体材料生长的MOCVD控制系统设计与实现

Design of MOCVD control system on GaN growth

但由于SiC是一种间接带隙半导体材料，其在光学方面上的应用受到了很大限制。

But as we know , SiC is an indirect band gap material , which limits the applications on optic aspects .

电致发光主要是在以ZnS等为基质的半导体材料中加入少量Cu、Mn等激活剂后在电场作用下发光。

Electroluminescence is based on the semiconductor materials such as ZnS doped with Cu and Mn driven by electric field .

作为一种典型的光电半导体材料，硫化镉（CdS）一维纳米材料的合成近年来受到人们的广泛关注。

As a typical photoelectric semiconductor , the fabrication of CdS one-dimensional nanostructure has attracted extensive attention recently .

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap , which has wurtzite structure too .

纳米ZnO是一种新型的宽能带直接带隙多功能半导体材料。

Zinc oxide nano material is a new type direct wide band gap semiconductor material , which has important applications in optical-electron devices .

SiC是一种重要的宽禁带半导体材料，在高温、高压、高功率及高频器件方面有重要的应用前景。SiC中的离子注入无论在基础研究还是在器件工艺中都具有重要的意义。

Silicon carbide is an important wide band gap semiconductor for high temperature , high voltage , high power and high frequency devices .

磷化铟（InP）已成为光电器件和微电子器件不可或缺的重要半导体材料。

Indium Phosphide ( InP ) has been indispensable to both optical and electronic devices .