亚阈值电流

短沟道MOSFET亚阈值电流的解析模型

Analytical Model of Subthreshold Current for Short Channel MOSFET

先对其进行理论上的计算分析，得到亚阈值电流，阈值电压，饱和电流等随温度的变化关系，并用Medici模拟仿真进行验证。

Its first theoretical calculation and analysis , sub-threshold current , threshold voltage , saturation current variation with temperature , and the Medici simulation verification .

他们对MOS晶体管的阈值电压、表面载流子的迁移率、亚阈值电流、漏源电流、泄漏电流等参数在25℃～300℃环境下的变化情况给出了高温电学特性方程和经验公式。

They have given out several experiential formulae and equations of high-temperature electrical characteristics about the threshold voltage , surface mobility of carriers , sub-threshold current , drain current and leakage current variations under 25 ~ 300 ℃ .

这些氧化层电子陷阱俘获电子后带负电，引起阈值电压增大、亚阈值电流减小。

The threshold voltage would increase and the sub-threshold current would decrease when the injected electrons are trapped by the electron traps .

针对应用要求，设计了一个环形振荡器，分析了影响振荡频率精度、输出波形及噪声的因素，并设计了一个无电阻的亚阈值电流偏置电路。

Factors that affect the oscillator frequency precision , output wave form and noise are analyzed in detail , and a weak inversion current bias circuit without resistors is designed .

分析认为雪崩热空穴注入栅氧化层，会产生界面态和大量中性电子陷阱，引起阈值电压增大、亚阈值电流减小。

The results show that when the avalanche hot holes inject into oxide , interface states and neutral electron traps are generated , and then threshold voltage increases and sub-threshold current decreases .

关态漏泄漏电流的退化分两个阶段：第一阶段亚阈值电流是主要成分，第二阶段栅电流是主要成分。

The degradation of drain leakage current can be divided into two phases . Sub-threshold current is predominant in the first phase , while in the second phase gate current is predominant .

就不同边缘注入剂量对H型栅SOIpMOSFETs亚阈值泄漏电流的影响进行了研究。

The research on the influence of edge implant on subthreshold leakage current of H-gate SOI pMOSFETs doses was made .

其中动态功耗包括开关功耗和内部功耗，静态功耗的主要来源为亚阈值泄漏电流。

The power source contains dynamic power and static power , the dynamic power contains switch power and internal power , meanwhile the sub-threshold leakage current is the main source of the static power .

此电路采用工作于亚阈值区的峰值电流镜，构成自偏置电路，具有非常高的电源抑制比和温度稳定性，非常适合现代低电压低功耗的应用，而且非常适合当今的IC工艺。

It applies MOS peaking current mirror working in subthreshold region to construct a self-biasing circuit and has great rejection to power variation and has strong stability for temperature . This circuit is also suitable for today 's IC process .

直接从亚阈值MOSFET漏源电流（即亚阈值电流）的方程中，得到亚阈值MOSFET栅源电压表达式，并分析其温度特性。

From the quoted equation for the current between source and drain Ids of the sub-threshold MOSFET , the expression for the voltage between gate and source drain Vgs of the sub-threshold MOSFET is directly got and the temperature characteristic of Vgs is theoretically analyzed .