TMAH

The Preparation and Purification of TMAH

四甲基氢氧化铵的制备与提纯综述

Research in Manufacturing Silicon Microstructure with TMAH Solution

TMAH腐蚀液制作硅微结构的研究

Preparation of tetramethyl ammonium hydroxide ( I ) application of TMAH solution in MEMS

四甲基氢氧化铵（TMAH）的制备（Ⅰ）四甲基氢氧化铵在MEMS中的应用

The Research and Analysis of the Roughness and Etching Rate in Forming Squre Silicon Cup with TMAH Solution

采用TMAH腐蚀液形成正方形硅杯的粗糙度与腐蚀速率的研究与分析

The anti-etching characterization of the films is carried out in KOH solutions and TMAH solutions at different temperatures .

本文比较了在不同温度条件下ABS胶膜在KOH和TMAH溶液中的抗腐蚀特性。

In addition , the problem of ester exchange of rosin esters as the function of TMAH and the condition for their determination were proposed .

本文还提出了有关中性松香施胶剂中松香酯成分由于TMAH作用而产生的酯交换问题及其解决办法。

Furthermore , the challenge and chance in the study field of TMAH is described , along with our new progresses on the preparation of TMAH .

对目前国内外市场需求进行了综合分析，指出了目前该领域遇到的挑战和机遇。介绍了作者在TMAH合成和提纯方面取得的进展。

Preparation of mPAA / CMC-mCS Bipolar Membrane and Application in Electro-synthesis of TMAH

mPAA/CMC-mCS双极膜的制备及其在电合成TMAH中的应用

Study on Si Wet-etch with 10 % TMAH

10%TMAH硅湿法腐蚀技术的研究

The experiments respectively studied the effects of alkali with surfactant , TMAH solution , and alkali with sodium silicate on the surface structures of single silicon .

实验上分别研究了碱液+活性剂、TMAH溶液、碱液+硅酸钠溶液腐蚀的单晶硅表面结构。

In addition , the addition of 0.0004 % SDS into the TMAH / IPA solution could reduce the pyramid size and the surface reflectivity of the silicon wafer .

在腐蚀液中加入0.0004%的十二烷基硫酸钠可以减小金字塔尺寸，降低表面反射率，提高绒面的质量。

TMAH has become a commonly used etchant for MEMS technology because of its high silicon etching rate , which depends on crystal orientation , low toxicity and well compatibility with CMOS technology .

TMAH具有刻硅速率高、晶向选择性好、低毒性和对CMOS工艺的兼容性好等优点，而成为MEMS工艺中常用的刻蚀剂。

The etching theory is given and the experimental procedure of three kinds of etchant ( KOH , EPW , TMAH ) is reported . Some results obtained are encouraging .

给出了各向异性腐蚀的机理，报告了三种不同腐蚀液（KOH，EPW，TMAH）的腐蚀工艺及实验结果。

Optimal process condition for manufacturing silicon microstructure in the research is that TMAH is 25 % , and ammonium persulfate is 3 % in solution , and etching temperature is 80 ℃ .

本研究所确定的最佳腐蚀工艺条件为溶液中TMAH浓度为25%，过硫酸铵添加剂浓度为3%，腐蚀温度80℃。

Characterization of etching of Al film and Si substrate with 10 % tetramethylammonium hydroxide ( TMAH ) has been done at a condition of adding various amount of Si dust .

研究了浓度为10%的四甲基氢氧化铵（TMAH）溶液，在不同量的Si粉掺杂下，对铝膜及硅衬底的腐蚀及其pH值的变化。

Using tetramethyl ammonium hydroxide ( TMAH ) as dispersant for SiC aqueous suspension , the effects of dispersant concentration and pH value on the rheological behavior of SiC aqueous suspension were studied .

使用四甲基氢氧化铵（TMAH）作为分散剂，研究了分散剂用量对SiC浆料流变性能的影响，并分析了其原因。

A method for the determination of trace amount of Pb and Cd in animal bone using GFAAS has been established . The samples were determined directly after being diluted by TMAH solution . The method is handy and fast .

本文建立了一种用石墨炉原子吸收光谱法测定动物骨中的痕量Pb和Cd的方法，试样以TMAH溶解后直接测定，方法简便。

Reactive pyrolysis gas chromatography ( Py-GC ) in the presence of an organic alkali , tetramethylammonium hydroxide (( CH3 ) 4NOH , TMAH ), was applied to the compositional analysis of natural resin shellac .

研究了有机碱试剂，氢氧化四甲铵（tetramethylammoniumhydroxideTMAH）共存下的反应热裂解气相色谱（Py-GC）应用于天然树脂紫胶的化学组成分析。

After finished the CMOS process , to realize the monolithic integration of CMOS readout circuits with detector arrays , the thermally insulated microbridge structure could be formed by front-end etching of the substrate using TMAH solution compatible with CMOS process .

在CMOS工艺完成后，辅以与CMOS工艺兼容的体硅微机械加工工艺，制备微桥形式的热绝缘结构，从而方便地实现了CMOS读出电路与探测器阵列的单片集成。

The experiment proves that the mask time of ABS films is up to about 10h in the 25wt % TMAH solutions at 90 ℃ . Another advantage of this film is that it can be chemically removed after etching .

实验证明：在90℃、25wt%TMAH溶液中，ABS薄膜的掩模时间达到10h左右，而且这种薄膜的优点在于很容易用化学试剂加以去除。

The results indicated that the etching solution velocity of Si ( 100 ) increased with the increasing of the etching solution concentration and temperature , and the etching solution degree was speeded up with the decreasing of the mol ratio of TMAH / KOH for different system .

结果表明：Si（100）面的腐蚀速度随着腐蚀液浓度和温度的升高而增大，随着TMAH与KOH摩尔比的降低，KTMAH腐蚀液对掩膜层的腐蚀程度加剧。