集电极

频率f、载流子正向延迟时间τF、集电极电流等因素都对高频噪声有影响。

Many factors , such as frequency , carrier forward delay time τ F and collector current , have influence on high frequency noise characteristics .

对新近提出的一种新结构的IGBT&内透明集电极IGBT进行了器件性能的仿真。

The performance of a new structural IGBT & an internal transparent collector IGBT ( ITC-IGBT ) that is proposed recently is simulated .

集电极电流下降时间对E类放大器的影响

Effects of the Collector Current Fall Time on the Class E Amplifier

SOI栅控混合管（GCHT）集电极电流的分区模型

Piecewise Model for Collector Current in SOI Gate Controlled Hybrid Transistor

结果发现，随着Ge引入到集电区，异质结势垒效应只有在较高的集电极电流下才会发生，而且产生异质结势垒的临界电流密度随Ce进入集电区深度的增大而增大。

It shows that the onset of HBE can be delayed to higher current density when Ge is extended into collector .

根据射随器实际上是共集电极放大器这一特性，采用共集电极放大器的低频小信号h参数等效电路分析了射随器的输出电阻。

For the property that the emitter follower is really a common-collector amplifier , we analyzed the output resistance of emitter follower using the h parameter equivalent circuit of common-collector amplifier .

GAT型高速高压功率开关管最大集电极电流的仿真

Simulation on Current Rating of GAT Type High-Speed High-Voltage Power Transistors

该结构采用P埋集电极纵向PNP晶体管作注入器，巧妙地实现了与正常向下工作的NPN晶体管并合。

A vertical PNP transistor with P-buried collector is used as injector which is merged with the downward operating NPN transistor .

在TTL与非门电路中，输出级改用集电极开路的一种反相器。

In TTL NAND circuit , a phase inverter with its output circuit changed to an open collector .

器件结构是双基极、双集电极npn晶体管。

The device is constructed with a double base , double collector npn transistor .

对内基区注入、选择性注入集电极（SIC）以及RTA等主要工艺条件对器件特性的影响进行了研究和优化。

Some important process steps , including the inner-base implantation , selective implantation of collectors ( SIC ) and RTA , are investigated and optimized .

容易分析E类放大器的参数灵敏度、谐波畸变及其它性能如集电极峰值电流、集射极峰值电压、输出功率能力等。

It is convenient to analyze the sensitivity of parameters , the distortion of output voltage as well as other performances such as the peak collector current , the peak collector_emitter voltage and the power_output capability etc.

频率、基极电流、集电极电流、发射极几何尺寸（面积、条长）、Ge组份x、温度等诸多因素都对低频噪声有影响。

Many factors , such as frequency , base current , collector current , geometry size ( emitter area and length ), Ge fraction and temperature , will have influence on low-frequency noise characteristics .

与普通硅衬底相比，采用绝缘型衬底制备SiGeHBT可以获得较高的基极-集电极击穿电压，较高的厄利电压和最大震荡频率。

As compared to bulk SiGe-HBT , SiGe HBT on the isolated type substrate have a higher Early voltage , maximum oscillation frequency , and breakdown voltage .

应在三极管工作在反向AGC区且不会进入饱和区的前提下，适当增大静态集电极电流，从而使振荡电路易于起振并有足够的输出幅度。

On condition that semiconductor triodes not entering saturation region while working in the reserve AGC region , we properly increase quiescence collector current , making the oscillator start oscillation easily with efficient output amplitude .

在高集电极-发射极电压和大电流下，在输出特性曲线上观察到了负微分电阻（NDR）特性。

The negative differential resistance ( NDR ) characteristics of Si / SiGe / Si HBT at high collector-emitter voltage and high current was observed .

工艺中采用了先进的深槽隔离技术、选择性集电极注入（SIC）技术、使用自对准Si3N4/SiO2复合侧墙作为E-B结的隔离、用低能氟化硼取代硼注入基区形成超薄内基区。

Some advanced technology is adopted including deep trench isolation , SIC , self-aligned Si3N4 / SiO2 composite sidewall as Emitter-Base junction isolation and ultra-thin interior base formed by BF2 implantation .

E类调谐功率放大器的理想模型是集电极电流下降时间为零，笔者在集电极电流下降时间不为零的情况下对E类放大器进行了分析；

The idealized model of tuned power amplifier of the class E is that the collector current fall time is zero . The purpose of the paper is to analyze the equations governing the operation of the amplifier when the collector current fall time is nonzero .

该薄膜磁阻系数ΔR/R≥9%，全金属自旋晶体管试样集电极电流变化MC>587%（常温），且其性能随基极Ag层厚度减小而增强。

It 's coefficient of magneto-resistance is Δ R / R ≥ 9 % , the coefficient of collector current amplify is MC > 587 % ( in room temperature ) . The properties of spin transistor increase as the base thickness decreasing .

本文对带旁路电感的E类放大器的波形、集电极电流和电压、输出功率进行了分析，计算出负载网络的最佳参数，为该类放大器的设计提供了依据。

This paper has analysed the waveforms of Class E amplifier with shunt inductor . The value of the collector current and voltage , the output power , and the parameters of the load network are also determined , which provide reference basis for the design of the amplifier .

使用Saber软件模拟仿真，对比分析了电路中的无源寄生参数、IGBT集电极对散热片的寄生电容等参数对差模干扰和共模干扰的影响。

And a high-frequency simulation modeling circuit is established with them . Using SABER software simulates the circuit , analysis the effects of passive circuit parasitic , the IGBT collector of heatsink parasitic capacitance parameter to common mode interference and differential interference .

在2GHz短脉冲工作条件下，该晶体管输出功率70W，增益8.5dB，集电极效率50%。

The transistor produces 70 Watts of output power with 8.5 dB of gain and 50 % collector efficiency at 2 GHz and for short pulse operation .

因此在设计中，选用了具有低噪声基底、高截止频率（70GHz）、高集电极电流容量的锗化硅材料的NPN晶体管，有利于提高系统的噪声性能。

The low phase noise potential of K-band VCO using NPN silicon-Germanium transistor with low noise floor , high cut-off frequency ( 70GHz ) and high collector current capacity has been studied in detail .

计算机分析表明：串接适当的发射极反馈电阻、集电极防振电阻以及工作在大的发射极电流是降低AM-PM变换的好方法。

Computer analysis shows that probably the best way of reducing the effect of AM - PM conversion ( i. c. reducing phase noise ) is emitter degeneration feedback , a series resistor between the collector and the tuned circuit as well as operating the devices at large emitter current .

集电极电阻的供电方式对稳压电源的影响

Influence of supply mode of collecting electrode resistance on voltage-steadied source

晶体管中发射极和集电极之间的区域。

The region in a transistor between the emitter and the collector .

数据和时钟线都是集电极开路的。

The Data and Clock lines are both open collector .

集电极电流密度和基区渡越时间的解析模型

Analytical Model of Collector Current Density and Base Transit Time

集电极铝箔优于铝网。

Aluminum foil was better than aluminum net when used as collector .

谐振放大器过压状态下集电极电流凹陷分析

Analysis of the Lapse of Collector Current in Resonant Amplifier under Overvoltage State