超高真空

超高真空CVD选择性外延锗硅及其电学特性

Electrical characteristics and selective growth of SiGe by ultrahigh vacuum chemical vapor deposition

新颖的超高真空CVD外延设备与低温低压硅外延研究

A study of ultrahigh vacuum chemical vapor deposition reactor and low temperature and low pressure silicon epitaxial layers

超高真空磁控溅射Co/Si多层膜的X射线衍射分析

The X-ray Diffraction Analysis of UHV Magnetron Sputtering Co / Si Multilayer

超高真空CVD生长锗硅外延层及其双晶X射线衍射研究

Growth of Ge-Si Strained layers and DC XRD Studies of the Epitaxial Films

硅上超高真空CVD生长硅锗外延层及其特性研究

Characterization and Growth of Germanium Silicon Epitaxial Layers by UHV / CVD

一台快速进入10~（-9）Pa的超高真空机组

An ultra-high vacuum system of quickly reaching 10 ~ ( - 9 ) pa

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

Study on Fabrication of SiGe / Si-HBT by Photo-assisted UHV-CVD

另一种情况是La薄膜在超高真空室内制备并就地研究。

In case 2 , the La thin film was prepared and in-situ studied in the UHV chamber .

超高真空CVD生长的Si（1-x）Gex合金组分变化与表面偏析现象

Surface Segregation and Content Variation in Si_ ( 1-x ) Ge_x Growth on Si in Ultra High Vacuum by Chemical Vapor Deposition

固／液界面电化学体系与超高真空电子能谱双向转移及其研究系统的建立和对Pt／Bi（ad）电极表面化学状态的研究

Establishment of New Research System to Combine Electrochemistry and Electron Spectroscopy and the Investigations of Surface Chemical States of Pt / Biad Electrode

利用扫描隧道显微镜和超高真空实验装置系统进行了Si（100）表面生长Si，Ge的实验研究。

Utilizing scanning tunneling microscope and UHV system , the growth of Si and Ge on Si ( 100 ) surface have been investigated .

在超高真空（<10-7Pa）系统中测量了BN薄膜的场发射特性，发现沉积时氮气分压的变化对BN薄膜的场发射特性有很大影响。

The field emis-sion characteristics of thin BN films were measured in a ultrahigh vacuum system .

在超高真空条件下，经300&600℃的热退火处理，可促进Cr膜与金刚石基底间的界面扩散和反应。

The interface diffusion and reaction between Cr and diamond was promoted by annealing in the range from 300 ℃ to 600 ℃ in high vacuum .

介绍X射线光学多层膜的构成原理、制作、测量方法及在超高真空系统中的研制技术。

The paper introduced the principle of structure of soft X-ray optics multilayers , and released the technique of measurement and fabrication of the multilayers in the UHV system .

CCD型电动超高真空插板阀是通过电动装置驱动阀杆带动阀板作上下运动，达到阀门的开启或关闭。

CCD electric ultra-high vacuum gate valve uses electric device to drive the stem , moving valve disc updown to make the valve opened or closed .

利用超高真空化学气相淀积（UHV/CVD）设备，在掺Asn+型Si衬底上生长了掺Pn-型Si外延层。

N & type silicon epitaxial layers were grown on arsenic-doped n + - type silicon substrate by ultra-high vacuum chemical vapor deposition ( UHV / CVD ) .

CC超高真空插板阀是以手柄带动阀板作上下运动使阀板开启或关闭。阀门用于接通或切断真空管路中的气流。

CC manual ultra-high vacuum gate valve uses a handle to drive valve disc up and down to perform open and close action .

使用超高真空扫描隧道显微镜（STM）观察了Si（100）面，得到了清洁Si（100）面的STM像。

Si ( 100 ) surface was observed with UHV - STM . STM images of clean Si ( 100 ) surface were obtained .

超高真空电子束蒸发合成晶态AlN薄膜的研究

Synthesis of AlN films by nitridation of Al films evaporated on si ( 100 ) substrate by UHV electron beam

NSRL电子储存环超高真空系统残余气体分析

Residual Gas Analysis of UHV System of Electron Storage Ring in NSRL

利用超高真空扫描隧道显微镜研究了室温条件下Ge在Si（111）7×7表面上初期吸附过程。

Ge preferential adsorption on Si ( 111 ) 7 × 7 surface at the initial stage has been investigated by ultra-high vacuum scanning tunneling microscopy ( UHV-STM ) .

PTB的超高真空计量标准&分子束法（10~（-10）Pa）为国际最好水平。

The ultrahigh vacuum measurement standard of PTB-the molecular beam method ( 10 ~ ( - 10 ) Pa ) is the best one in the world .

此方法已成功应用于一套实验室自制的超高真空扫描隧道显微镜中，得到了清洁Si（111）表面7×7重构的原子分辨像。

The solution has been applied to an ultra high vacuum scanning tunneling microscope , and acquired atom resolution image of 7 × 7 reconstruction on clean Si ( 111 ) surface .

本文报道用光学二次谐波产生法（SHG）在超高真空环境内对银氧吸附体系所作的实验研究。

Optical second-harmonic-generation study on the adsorption of oxygen on a polycrystalline Ag in an UHV chamber is reported .

用溅射离子泵获得超高真空，监测室本底真空度为6×10~（－7）Pa。

The apparatus is pumped by an ion sputtering pump . A base pressure of 6 × 10 ~ ( - 7 ) Pa was obtained in the analysis section .

EAST真空室作为超高真空压力容器是EAST超导托卡马克核聚变实验装置的关键部件之一，是等离子体放电的直接场所，其获得的真空度质量直接影响装置运行时等离子体的各项基本物理参数。

The vacuum vessel as an ultrahigh vacuum pressure vessel is one of the important components of the EAST device , providing high quality vacuum conditions for the plasma discharge , which will affect greatly all kinds of plasma parameter .

应用自建的超高真空原位装置及扫描俄歇微探针（SAM）技术，研究了AU－Ag／Si体系的表面电迁移现象。

In this paper , a new system was developed to study surface electromigration . Scanning Auger microprobe ( SAM ) was used in situ to characterize the electromigration behavior in Au-Ag / Si system .

上海EBIT装置低温超导段超高真空系统

UHV system in Shanghai EBIT cryo-superconduction chamber

第二章简单介绍了超高真空系统和变温扫描隧道显微镜（VTSTM）系统的建设，以及对变温STM系统作的一些主要的改进工作，为我们的研究工作做好仪器方面的准备。

In Chapter 2 , we simply introduced the constructions of the ultra-high vacuum system and the VT STM system , and the main amelioration on the compound instruments .

本实验利用了超高真空低温扫描隧道显微镜，测量了红荧烯在铅岛表面的自组装结构和Co在Bi表面的磁性纳米点阵。

This experiment using the ultra-high vacuum low temperature scanning tunneling microscope to measure the self-assembled structures of rubrene on the surface of Pb island and the magnetic nanometer lattice of Co on the surface of Bi ( 111 ) .