紫外探测器

GaN紫外探测器的Ti/Al接触的电学特性

Electrical properties of Ti / Al contacts on GaN UV detector

穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

测量了该紫外探测器的暗电流曲线、CV特性曲线、光响应曲线和响应时间曲线。

Its dark current , C-V , responsivity , and response time are measured at room temperature .

ZnO基紫外探测器及关键技术研究

Research of ZnO-based UV detectors and key technologies

硅基GaN欧姆接触及紫外探测器的研究

Study of Ohmic Contact and UV-detector Based on GaN / Si

氩氧比对ZnO薄膜特性的影响与紫外探测器的研制

Effect of Ar / O_2 ratio on properties of ZnO film and development of ultraviolet photodetector

ZnO肖特基势垒紫外探测器

ZnO Schottky Barrier UV Photo detector

GaN肖特基紫外探测器的电流输运研究

Current Transport of GaN Schottky UV Detectors

两种结构GaN基太阳盲紫外探测器

Solar-blind GaN-based UV Detectors with Two Structures

纳米TiO2薄膜的制备及其光导型紫外探测器的初步研究

Preparation of the TiO_2 Thin Film and Research on Its Ultraviolet Photoconductive Detector

结构参数对GaN肖特基紫外探测器性能的影响及器件设计

Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design

氧化锌基半导体光电器件主要包括紫外探测器、发光二极管（LED）和半导体激光器（LD）等。

ZnO-based semiconductor optoelectronic devices include ultraviolet detector , light emitting diodes ( LEDs ) and laser diodes ( LDs ), etc.

TiO2紫外探测器的制作及应用

Fabrication and Application of TiO_2 Ultraviolet Photodetector

GaN基半导体在短波长发光二极管、激光器和紫外探测器以及高温微电子器件等方面显示出广阔的应用前景，已成为人们研究的热点。

GaN has very promising potential for short-wave length light-emitting diodes , semiconductor lasers , and optical detectors .

我们基于高阻的低缺陷密度同质外延GaN材料首次制作了具有双工作模式的肖特基势垒型紫外探测器。

We demonstrate a dual-operation-mode UV Schottky-barrier PD fabricated on high-resistivity GaN homoepitaxial layer with low defect density .

新型TiO2紫外探测器的研制

Study on TiO_2 Ultraviolet Photoconductive Detector

对GaN基宽禁带紫外探测器材料体系的研究进展进行了回顾，重点介绍了p型材料的制备、金属半导体接触、材料的蚀刻等。

Review was made on GaN based wide gap semiconductor material and devices , especially for p-type material manufacture , metal-semiconductor contact , material etching , etc.

为了改进（Al）GaN基紫外探测器的性能，非常关键的是如何降低器件的暗电流以及提高器件的热稳定性。

To improve the performance of ( Al ) GaN UV PDs , it is important to achieve low dark current and high thermal stability .

MOCVD法ZnO薄膜生长及其紫外探测器的制备与初步研究

The Growth of ZnO Films by Metel-organic Chemical Vapor Deposition ( MOCVD ) and the Fabrication and Study of ZnO UV Detector

高量子效率前照式GaN基p-i-n结构紫外探测器

Characteristics of a Front-Illuminated Visible-Blind UV Photodetector Based on GaN p-i-n Photodiodes with High Quantum Efficiency

GaN基p-i-n紫外探测器

GaN - based p-i-n Ultraviolet Detectors

采用MOCVD技术在Si（111）衬底上生长GaN薄膜，以此材料制备成光导型Si基GaN紫外探测器。

Using the GaN epilayer which was grown on Si ( 111 ) by MOCVD to fabricate GaN ultraviolet detectors is reported in this paper .

背照式GaN/AlGaNp-i-n紫外探测器的制备与性能

Fabrication and Characterization of Backside-illuminated GaN / AlGaN p-i-n Ultraviolet Detector

因此，ZnO被视为制备紫外探测器、紫外激光器等紫外波段光电器件最具有潜力的半导体材料之一。

Therefore , ZnO has been regarded as one of the most potential materials for manufacturing the ultraviolet ( UV ) optoelectronic devices such as UV detectors and UV lasers .

CVD金刚石紫外探测器有极强的辐射硬度及耐腐蚀性，在宽禁带半导体紫外探测器中占有重要地位。

CVD diamond ultraviolet ( UV ) detector takes an important role among those large bandgap semiconductor UV detectors for its radiation hardness and corrosion resistence .

日盲型ZnO真空紫外探测器的研究以掺Al的ZnO阴极制备为基础，综合阴极激活工艺和器件的整体结构设计进行探讨。

Based on Al-doped ZnO ( AZO ) cathodes , a solar-blind ZnO vacuum ultraviolet ( UV ) detector is studied while integrating the cathode activation process and the device structure design .

通过先进的紫外探测器和紫外CCD摄像机，以及先进的信号处理方法，采用状态维修方式来维护飞机是当前的大趋势。

It is a trend in the world now that use state maintain method to maintain jet plane 's engine by taking advantage of UV sensor , UV CCD camera and advanced signal processing methods .

介绍了Pt/CdS金属半导体接触Schottky势垒形成及In/CdS的欧姆接触工艺研究，由此制成了紫外探测器。

Studied the obtaining of Schottky barrier about Pt / CdS contact and ohm contact about In / CdS , and made ultraviolet detector on it .

结果表明：基于四针状纳米ZnO的紫外探测器件对紫外光（365nm）具有非常灵敏的响应特性。

The results show that the device based on the tetrapod ZnO nanostructures responds very well to ultraviolet ( 365nm ) .

GaN基氮化物材料已成功地用于制备蓝、绿、紫外光发光器件，日光盲紫外探测器以及高温、大功率微波电子器件。

GaN based nitrides have been successfully used in blue / green / violet light emitting devices , UV solar blind optoelectronic detectors and high temperature , high power microwave electronic devices .