多晶锗

在用Si层做为缓冲层时，能得到晶体质量较好的多晶锗硅薄膜。

It is found that good crystallization thin film of poly-Si_ ( 1-x ) Ge_x could be synthesized using Si buffer layer and Ni induced layer .

钴镍与多晶锗硅的固相反应和肖特基接触特性

Solid-Phase Reaction Between Co , Ni / n-poly-Si_ ( 0.84 ) Ge_ ( 0.16 ) and Schottky Barrier Properties of the Formed Contacts

包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。

The research focused on the growth of SiGe single layer , multi-layers , metal induced growth of poly-SiGe , Schottky barrier diodes ( SBDs ) were fabricated .

文章阐明用多晶锗硅薄膜作为太阳能电池材料，能获得比多晶硅薄膜太阳能电池更高的发电效率和更低的成本。

It also points out that the higher electricity generating efficiency and lower cost will be obtained if polycrystalline silicon germanium ( poly-SiGe ) alloys is used as solar energy materials compared with polycrystalline silicon thin film ( poly-Si ) .