隔离层

ɡé lí cénɡ
  • isolating layer
隔离层隔离层
  1. 基于SLS系统的崩落法矿石隔离层下放矿研究

    Study of the Ore-Drawing under Ore Isolating Layer in Caving Based on SLS System

  2. 糖衣片隔离层的透湿性及强度考查

    Studies on moisture permeability and strength of isolating layer in sugar coated tablets

  3. 用反射隔离层来改善双面X射线胶片的成像能力

    The improvement of the imaging capability of special double coated X-ray film with reflecting-isolation layer

  4. 走带速率对Y2O3隔离层生长的影响

    Influence of Moving Speed on Epitaxial Growth of Y_2O_3 Buffer Layer

  5. 用于RF无源器件的氧化多孔硅隔离层技术

    OPS insulating techniques for RF passive devices

  6. 该策略首先构造基于XML标准的数据描述文件和业务数据库逻辑结构描述文件的接口层作为隔离层。

    The description files of data and the transaction database logic structure were built which was the interface constructed according to the XML standard .

  7. 据此分析了基区B杂质的偏析和外扩对器件的影响以及SiGe/Si隔离层的作用。

    Based on this , the effects of B dopant segregation and out diffusion in the base of SiGe / Si HBT and I SiGe spacers are investigated .

  8. 实际上,如果没有隔离层,坏的ET应该在很早以前就侵略地球了。

    In fact , without this Quarantine , negative ETs would have invaded and taken over this planet eons ago .

  9. 在钝化层和沟道之间引入的p型隔离层抑制了表面陷阱的影响,并改善了栅极边缘的电场分布。

    A p-type spacer layer , inserted between the oxide and the channel , is shown to suppress surface trap effect and improve the distribution of electric field at the gate edge .

  10. 铌酸锂的无隔离层X切电极结构有最小的半波电压,其大小约为Z切器件的70%。

    None buffered X cut Lithium Niobate electrode structure has the smallest half wave voltage ( about 70 % of Z cut devices ) .

  11. 利用薄入射势垒和宽隔离层在双势垒结构中实现了纯净的二维(2D)至二维(2D)共振隧穿模式。

    A pure 2D-to-2D resonant-tunneling mode has been realized in double-barrier structures ( DBS ) by using thin incident barrier and wide undoped spacers .

  12. 首次用MonteCarlo方法模拟了应变场作用下Si原子在非晶氧化硅隔离层上的分布状态。

    In theoretical aspect , we firstly simulated distribution of Si atoms on the amorphous SiO2 buffer layer under the effect of strain field by using Monte Carlo method .

  13. si/Si(1-x)Gex/Si异质结双极晶体管中基区杂质外扩散与未掺杂Si(1-x)Gex结隔离层的影响

    The Effects of Base Dopant Outdiffusion and Undoped Si_ ( 1-x ) Ge_ x Junction Spacer Layers Si / Si_ ( 1-x ) Ge_x / Si Heterojunction Bipolar Transistors

  14. 位于熔体A、B间的隔离层熔体C。无扰动时,隔离层熔体C包围着晶体生长面和熔体B,使晶体只与溶体B接触,不与熔体A接触。

    Separated layer melt C which is located between melt A and B.The separated layer melt C surrounds the growing interface of crystal and melt B , brings growing interface of crystal in contact with melt B and not with melt A.

  15. SBS防水卷材是以聚脂纤维为胎体,以SBS橡胶改性石油沥青为漫渍涂盖层,以聚乙烯塑料薄膜为防粘隔离层的一种柔性油毡。

    Waterproof coiled materials of SBS are a flexible felt of polyester fibre as casing , SBS modified asphalt as coating and polyethylene film as antiseizing separation layer .

  16. 采用表面氧化外延(SOE)方法,在金属基底上研制NiO隔离层。

    The NiO buffer layers were formed on pure Ni tape for YBCO coated conductor by the surface - oxidation epitaxy ( SOE ) process .

  17. 遵循这些原则有助于在组件之间创建隔离层,促进重用,建立中央控制和管理点,比如ESB。

    Following these principles will help creating isolation layers between components , promote reuse , and enable the establishment of central points of control and management , like an ESB .

  18. 该文运用频依时域有限差分((FD)2TD)方法对附有介质隔离层的等离子体覆盖的单极子天线进行分析。

    A monopole antenna covered by plasma with an insulator is analyzed by using the ( FD ) ~ 2 TD method .

  19. 分析结果表明,Co膜与FeNi膜的层间耦合强度及类型取决于中间隔离层(铝膜或氧化铝膜)的性能和厚度;

    The dependence of the magnetic coupling strength and type between Co and FeNi films on the property and thickness of the space layer ( aluminium layer or alumina layer ) was studied .

  20. 为了调制激基复合物发光的强度,用薄层的CBP作为隔离层加入到NPB和BDHFLYDFLQ材料之间。

    In order to manipulate the strength of exciplex emission , thin layer of CBP was inserted into the interface of NPB / BDHFLYDFLQ heterojunction .

  21. 薄膜的在线真空退火工艺和SiO2隔离层都能提高薄膜的退火温度和延长薄膜的退火时间,能够改善薄膜的光电性能。

    The optical and electrical properties of the films will be improved by in-line vacuum annealing and SiO_2 isolate layer between substrate and ATO layer which can improve annealing temperature of the films and lengthen annealing time of the films .

  22. 从保护环境和经济、社会效益等综合考虑,建议采用1.5m填高的路基,并在必要时采取路基中下部铺设透水隔离层的方法。

    Generally taking account of all the factor , the project that subgrade height take 1.5m depth are proposed , the method laying the water percolation insulating layer in the lower part of subgrade are adopted if necessary .

  23. 建立了带有不掺杂隔离层的突变异质结双极晶体管(HBT)模型,在热场发射-扩散(TFD)理论的基础上,又考虑了空间电荷区中的复合效应。

    A more complete theoretical model based on the thermionic-field-dif-fusion ( TFD ) theory including recombination effects in the space-charge-region ( SCR ) for abrupt heterojunction bipolar transistors ( HBTs ) with a setback layer is presented in this paper .

  24. 将三维网格法引入到Salisbury屏的优化设计之中,并用电磁损耗材料代替了经典Salisbury屏的隔离层材料。

    In this paper , the three dimensional lattice method was introduced in the optimized design of Salisbury screen , and the insulating layer material of the classical Salisbury screen was also replaced with the electromagnetic loss material .

  25. 探测器呈模块化结构,每个模块16个通道,通道间距1.3mm。CdWO4晶体尺寸0.8mm×5mm×30mm,晶体间放置铅隔离层以减小串扰。

    The detectors were assembled in modular form , with 16 channels in each module , crystal size of 0.8 mm × 5 mm × 30 mm and pitch size of 1.3 mm . Lead spacers were placed between crystals to reduce the cross-talk .

  26. 对有介质隔离层的Ti:LiNbO3电光波导器件进行电极分析,用镜象法导出了LiNbO3衬底和介质隔离层内电场分布的解析表达式,计算讨论了介质隔离层对器件性能的影响。

    An electrode analysis is presented for the Ti : LiNbO_3 electrooptic waveguide devices with a buffer layer . The analytical expressions for the electric field dis - tribution are obtained using the image method , and the influence of the buffer layer on the device performance is assessed .

  27. 溶胶-凝胶法制备Y系涂层导体隔离层

    Fabrication of buffer layers for YBCO coated conductors by sol-gel processing

  28. 表面氧化外延制备钇系涂层导体隔离层

    Fabricating Buffer Layer for Y-Based Coating Conductor by Surface Oxidation Epitaxy

  29. 东秦岭特长隧道防水隔离层铺设技术

    Laying Technology for Waterproofing Insulation Layer of East Qinling Super-long Tunnel

  30. 太阳能制冷空气隔离层环流通风储粮试验研究

    Study on solar energy cooling for recirculation ventilation in grain storage