镓铝砷

镓铝砷双异质结红光二极管中红外辐射起因的研究

Study of the origin of infrared emission in GaAlAs DH red led 's

镓铝砷LED中的深能级及其对光电特性的影响

Deep level in ga_xal_ ( 1-x ) as led and the influence on the optical and electrical properties

镓铝砷半导体激光器砷化镓注入式激光器

Ga al as semiconductor laser gallium arsenide injection laser

镓铝砷激光并短波综合治疗早期面神经炎疗效观察

Clinical observation of Ga Al As Laser and short wave therapy on early facial neuritis

镓铝砷激光照射鼻腔对认知障碍患者脑功率等的影响

Effect of low intensity semiconductor laser irradiation on EEG power spectrum and P_3PL in cognitive disorder patients

镓铝砷半导体激光器

Ga al as semiconductor laser

用电诱导液相外延法制备铝组分稳定的高铝值镓铝砷外延层

Preparation of Ga_ ( 1-x ) Al_xAs Epitaxial Layer of Steady Al Component By Current-controlled Liquid Phase Epitaxy

结论早期面神经炎患者，药物治疗配合镓铝砷激光并短波，产生协同作用，使临床疗效明显提高。

Conclusion Treating early facial neuritis with medicine and Ga Al As laser combined short wave therapy can improve the curative effect .