相对介电常数

以相对介电常数和损耗角正切为输入特征参数，应用BP神经网络技术识别桃的新鲜度等级，平均识别率为82%。

Furthermore , BP neural network technology was used to identify freshness of peaches when relative dielectric constant and loss tangent were selected as input characteristic parameters . Results showed the average distinguishing rate was 82 % .

XRD测试结果表明制备的BST薄膜具有完整的钙钛矿晶体结构，相对介电常数超过150，介质击穿强度大于1.3MV/cm。

The film showed integrated perovskite crystal structure under the XRD test . The relative dielectric constant was over 150 and dielectric strength was larger than 1.3 MV / cm .

气体相对介电常数εr的测量

Measurement of Dielectric Constant of Gases

气体的相对介电常数εr在理工科大学的教材中都要讨论，但相应的实验较少，并且实验教学效果不佳。

The measuring dielectric constant of gases have discuss at university teaching book but experiment discuss be a few and teaching not be very effective .

结果还表明该结构的偶-奇模特性阻抗Z（eo）随频率变化很大，当相对介电常数εr较小时，变化更大。

It is shown that the even-odd mode impedance changes rapidly with frequency , especially when the dielectric constant er is small .

磁电阻（MR）和巨磁电阻（GMR）测试系统相对介电常数对电磁波电阻率测量值的影响及校正方法

A Computer-added Measuring System for Magnetoresistance and Giant Magnetoresistance The Impact of Dielectric on MWD Array Electromagnetic Wave Resistivity Tools and Correction Method

微波介质陶瓷材料的三个主要参数相对介电常数εr、品质因数Q和谐振频率温度系数之间存在一定的关系。

Some relationships should be existed among the three main properties of microwave dielectric ceramic materials which are dielectric constant , quality factor and temperature coefficient of resonate frequency .

提出了利用555单稳电路和示波器测量绝对分电常数ε0和一些材料的相对介电常数εr的一种新方法。

N this paper a new way is suggested for determining the permittivity of free space and dielectric constant of some materials by means of 555 timer monostable circuits and oscilloscopes .

镁的掺杂有助于获得细晶高致密的陶瓷，当n（Mg）/n（Ti）为0.06时，致密度最高，常温下相对介电常数高达4100，击穿场强达到3.2MV/m以上。

When the atomic ratio of Mg to Ti is 0.06 , the density reaches the maximum and dielectric constant reaches 4100 and destroyed electric strength rises up to more than 3.2 MV / m.

分析了电介质极化时各宏观量之间的关系，电介质的相对介电常数εr的测量及其随交变电场频率变化的关系。

This paper analyses the dielectric polarization and the dielectric constant , provids a method of measuring the dielectric constant and analyses how the dielectric constant varies with the frequency of the applied oscillation electric field .

根据该表达式算得的TM（01）模天线方向图在相对介电常数较小时与文献〔3〕的结果相吻合。

For small values of the relative permittivity ε _ (?) , the radiationpatterns for TM_ ( 01 ), mode are in agreement with those of [ 3 ] .

800℃热处理后的厚膜在室温、频率1kHz下相对介电常数εr和介质损耗tgδ分别为455、0.036。

Dielectric constant ε r and dielectric loss tg δ of the thick film annealed at 800 ℃ are 455 , 0.036 , respectively .

而在退火时间为30min时，随着退火温度的增加，钛酸锶钡薄膜的相对介电常数增加。

Increases with the increase of annealing temperature when the annealing time is 30 min.

该系统可根据加载介质前后圆柱谐振腔的谐振频率和品质因数，计算出被测材料的相对介电常数εr′和损耗角正切tanδ。

According to the frequency and the quality factor of the cylindrical cavity unloaded and loaded , the system can calculate the permittivity ε′ _r and the loss angle tangent tan δ of the materials being tested .

在1MHz下测试了材料的介电常数及损耗。薄膜具有较高的相对介电常数和较小的介质损耗。

The thin films have higher relative dielectric constant and lower dielectric loss .

提出了一种可变低k（相对介电常数）介质层（variablelowkdielectriclayer，VLkD）SOI高压器件新结构，该结构的埋层由可变k的不同介质组成。

A novel SOI high voltage device structure with a variable low k dielectric layer ( VLkD ) is proposed . The buried layer is made up of dielectrics with variable k.

发现：（Ta2O5）1-x（TiO2）x陶瓷经激光快速烧结后产生了新相，从而导致相对介电常数大幅度提高。

It is discovered that new structure phase appear in laser sintered ( Ta_2O_5 ) _ ( 1-x )( TiO_2 ) _x ceramics , which results in the enhancement of dielectric permittivity .

随着晶粒的减小，BST陶瓷的相对介电常数和介电损耗降低，尤其是介电损耗因子有较大幅度降低。

With the decrease of grain size , the BST ceramics ' relative dielectric constant and dielectric loss reduce , and especially their dielectric loss factor reduces greatly .

对缺陷地结构（DGS）实现的等效均匀传输线提出了一种简单有效的由S参数求其特性阻抗和有效相对介电常数的方法。

In this paper , a simple and effective method to extract characteristic impedance and effective relative permittivity of equivalent even transmission line realized by defected ground structure has been presented .

整个设计过程都通过HFSS软件仿真实现。最后，根据传输线理论，提出了一种测量介质板相对介电常数的方法。

The entire design process was simulated by HFSS software . Finally , based on Transmission line theory , the author proposed a method for measuring the relative permittivity of medium plate .

安捷伦4396B阻抗分析仪在测试吸波材料复相对介电常数上的应用

Application of Agilent Impedance Analyzer 4396B on Measurements of Absorbing Materials Complex Permittivity

结果表明：ZnO压敏陶瓷高温烧结态经激光冲击处理后，电位梯度降低了15.6%，非线性系数提高了43.4%，漏电电流降低了50%，相对介电常数提高了103%。

The results indicated that ZnO varistor ceramics in high-temperature sintering by laser shock processing , voltage gradient reduced by 15.6 % ; nonlinear coefficient substantially increased by 43.4 % and leakage current reduced by 50 % . The relative dielectric constant increased by 103 % .

而ZnO压敏陶瓷高温烧结态在退火处理基础上进行激光冲击处理，与退火态相比，其电位梯度基本不变，非线性系数提高了31.6%，漏电电流降低了33.3%，相对介电常数提高了68.9%。

Annealing treatment of ZnO varistor ceramics in high-temperature sintering by laser shock processes vs annealing treatment , the voltage gradient is essentially the same , nonlinear coefficient substantially increased by 31.6 % and leakage current reduced by 33.3 % . The relative dielectric constant increased by 68.9 % .

在1200℃烧结后的厚膜在0℃，1kHz时，相对介电常数为900，介电损耗为0.03。

The relative dielectric constant and loss tangent of the thick films sintered at 1 200 ℃ are about 900 and 0.03 at 0 ℃,( 1 kHz . )

研究了Bi2O3掺杂对Nb2O5-TiO2电容压敏双功能陶瓷材料的烧结温度，相对介电常数，非线性，压敏电压的影响。

The effect of the addition of Bi_2O_3 on the different sintering temperature , dielectric permittivity , nonlinear electrical characteristics and varistor voltage of Nb_2O_5-TiO_2 Capacitor-Varistor double functional Ceramics system was investigated .

LCR测量结果显示，在相同温度下薄膜比块体的相对介电常数低，薄膜相对介电常数由低到高转变时对应的温度较高且激活能较大。

LCR results show that the relative dielectric constant of the films is lower than that of the bulck materials at fixed temperature , and the temperature at which the dielectric constant transits abruptly is higher and the activation energy of the films is larger .

研究表明：常温下去离子水的相对介电常数约为80，经过去离子处理后电阻率可达12.58MΩ·cm；当平均击穿时间为5.77μs时，去离子水的平均击穿场强为112.18kV/cm。

It 's showed that the relative permittivity is about 80 , the resistance ratio is 12.58M Ω · cm , the average breakdown strength is 112.18kV/cm when the average breakdown time is 5.77 μ s in normal temperature .

结果表明，当莫来石质量分数为50%时，玻璃–陶瓷复合材料经1000℃、2h的烧结后，其相对介电常数er为4.6、介质损耗tgd为0.008、抗弯强度s为90MPa。

The results show that when the mullite content is 50 % , the relative dielectric constant reaches 4.6 , the dielectric loss reaches 0.008 and the bending strength reaches 90 MPa after the glass - mullite composite material are sintered for 2 h at the temperature of 1000 ℃ .

实验结果表明：在充电电压为20kV时，71.2%的混合液比36.5%的混合液的平均击穿电压提高25.1%，平均击穿时间延长10.49%，而相对介电常数减小868%。

Compared the mixture of 71.2 % to the mixture of 36.5 % , the results show that the breakdown strength increased 25.1 % and the breakdown time delayed 10.49 % , but the relative permittivity decreased 7.91 % .

计算了在0.5～2.0THz频率范围内n-Si和p-Si的折射率、相对介电常数、电导率及介电损耗的情况，证实了两个样品在太赫兹波段都具有良好的介电特性。

The reflective index , relative permittivity , complex conductivity and dielectric loss of n-Si and p-Si are calculated in the range of 0.5 ~ 2.0 THz , and the results indicate that two samples both have good dielectric properties and can be used to work in the THz range .