电阻率

diàn zǔ lǜ
  • resistivity;electrical resistivity;specific resistivity;specific resistance
电阻率电阻率
电阻率[diàn zǔ lǜ]
  1. 其体积电阻率p降低约一个数量级,但只比1%(质量分数)Sft/PVA膜的p略有降低。

    The resistivity decreased approximately one order of magnitude .

  2. 电阻率测井法中的Green函数

    Green 's Function in Electrical Resistivity Logging

  3. K法克服电阻率测量中的似非而是现象

    The anomalous phenomena in resistivity measurement overcame by K method

  4. 低电阻率SiCO纤维制备

    Preparation of Si-C-O Fiber With Low Resistivity

  5. 各种氧化物添加剂的添加量对ZnO陶瓷的室温电阻率及电阻温度特性具有较大的影响。

    The additives content affected the resistivity and resistance-temperature properties .

  6. 电阻率测试表明,氮化碳薄膜的电阻率值达到1012~1013Ω·cm。

    The resistivity of carbon nitride films is 10 12 Ω· cm to 10 13 Ω· cm .

  7. P型PbSe单晶的低温电阻率

    The Resistivity of P Type PbSe Crystal at Low Temperature

  8. Mo2C膜电阻率的研究

    Research on the Mo_2c film 's Resistivity

  9. 通过对土壤电阻率、pH及其它理化指标的测试分析,评价沙漠中天然气管道服役环境的腐蚀性。

    The corrosiveness of the circumstances in which pipeline was working was evaluated by testing and analyzing resistivity , pH and physicochemical properties of the soil .

  10. 其烧结温度为1400℃时,其相对密度为95.63%,电阻率为78.37Ω·cm。

    The relative density of the specimen fired at 1 400 ℃ was 95.63 % , and the resistivity was 78.37 Ω· cm .

  11. 电阻率CT法探测技术能够对工作面底板含水体进行有效探测,因而具有重要的理论和现实意义。

    The resistivity computerized tomography ( CT ) technique is of important theoretical and realistic significance because it can detect the water-bearing bodies in the floor of working face .

  12. 基于TiSi2低电阻率的优点,采用Ti制作肖特基二极管。

    The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes ( SBD ) .

  13. 文章介绍了WC弥散强化铜的制备过程,通过比较WC弥散强化铜和纯铜的有关性能(硬度、电阻率、密度),指出WC弥散强化铜是一种有潜力的强化铜。

    The process of manufacturing WC dispersion strengthened copper ( DSC ) was introduced by mechanical alloying .

  14. 室温电阻率大幅降低的原因,是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

    The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant .

  15. NIM-IC型半导体硅单晶电阻率标准样片与NBS的SRM型标准样片的比较实验

    Comparison Experiments Between the NIM and NBS Standard Slices for Single Crystal Silicon Resistivity

  16. 电阻抗断层成像(electricalimpedancetomography,EIT)技术是以人体内部电阻率的分布为目标的重建体内组织图像的技术。

    Electrical impedance tomography ( BIT ) is a technique that produces images of the tissues by means of impedance distribution in a body .

  17. HTPB推进剂的击穿电场强度随体积电阻率的增加而升高,随介电常数的增加而降低。

    The dielectric strength of HTPB propellant increases with increasing volume resistivity or decreasing dielectric coefficient .

  18. 2)采用机械合金化制备的Cu-Cr-(Zr)复合材料,具有很高的强度、硬度以及较低的电阻率。

    2 ) Cu-Cr - ( Zr ) composites prepared using mechanical alloying has high strength , hardness and low electrical resistivity .

  19. 这种CdS薄膜具有六方晶和立方晶混合结构,结晶均匀细致,电阻率约为10~4~10~5Ωcm。

    This kind of CBD-CdS is the mixture of hexagonal and cubic crystal . Its resistivity is about 10 ~ 4 ~ 10 ~ 5 Ω cm .

  20. Al的加入量对反铁磁转变引起的电阻率变化有强烈的影响,随Al浓度的增加,反常电阻率急剧增大,这可能与Al使合金中Fe离子位置存在较大局域净磁矩有关。

    The amount of Al addition is vigorously influenced on the variation of magnetic resistivity induced by the antiferromagnetic transition . The more Al they contain , the more sharp increment it is .

  21. 在MT固有的等值性范围内,正演修正法能正确恢复各电性层的电阻率和厚度。

    In a range of intrinsic equivalence of MT , " forward modified method " can correctly restore resistivity and thickness for each conducting layer .

  22. La(0.67-x)ErxSr(0.33)MnO3(0.00≤x≤0.20)体系的磁电特性和低温电阻率反常

    Magnetic and Electrical Features of La_ ( 0.67-x ) Er_xSr_ ( 0.33 ) MnO_3 System and Anomalous Low-Temperature Resistivity Behavior

  23. Ni/Au与p-GaN的比接触电阻率测量

    Measurement of Ohmic Contact Resistivity Between Ni / Au and p-type GaN

  24. 采用sol-gel法在Pt/Ti/SiO2/Si衬底上制备了c轴择优取向优良、电阻率高和化学计量比好的掺Li+(Li/Zn摩尔比分别为0、0.05、0.10、0.15、0.20)ZnO压电薄膜。

    The piezoelectric ZnO ∶ Li films possessing preferential c-axis orientation , high resistivity and good stoichiometry were achieved on substrate of Pt / Ti / SiO_2 / Si by the sol-gel method .

  25. 低电阻率高性能BaTiO3基PTCR陶瓷材料

    High performance BaTiO_3-based PTCR ceramic material with low resistivity

  26. 结果表明,PP粉末镀层表面质量良好、电阻率较低,镀层电阻率随镀层中铜含量增加而降低;

    Results showed that the plating coat of the material had good surface quality and low resistivity , the resistivity of plating coat decreased with the increasing of the content of copper .

  27. 通过水洗试样后测试其表面电阻率变化,对比了几种抗静电剂在HDPE树脂中不同的析出速度;

    The changes of the surface resistence were determined after the sample was washed with water and the separating rate of the agent in HDPE was compared .

  28. Hall测试得出薄膜的电阻率低、迁移率和载流子浓度高,并且薄膜与电极的接触为欧姆接触。

    Hall testing shows that the resistivity of the film is lower than other ZnO films and the carrier concentration is much higher . The contact between the film and electrode is ohm contact .

  29. SU气田砂岩低电阻率气层形成原因复杂,气水层识别也非常困难。

    Since the geneses of low resistivity gas zone with sandstones are complex in SU gas field , it is difficult to indentify the gas zone and water zone .

  30. 提高退火温度,有利于改善薄膜质量,增强薄膜在紫外边带的光致发光现象,N2气氛下退火可以降低薄膜的电阻率。

    Increasing the annealing temperature was conducive to improving film quality and enhancing bandgap ultraviolet emission . The resistivity could be reduced in N2 annealing atmosphere .