通过低温光致发光谱仪(LTPL)、电子顺磁共振谱仪(EPR)对SiC晶体的点缺陷随温度的变化进行分析。
Through the low-temperature photoluminescence spectrometer ( LTPL ) and electron paramagnetic resonance spectroscopy ( EPR ), the point defects of SiC crystal with the annealing temperature change have been investigated .