游离硅

碳化硅中游离硅（Sif）的测定

Determination of free silicon in silicon carbide

SHS法合成低游离硅亚微米级β-Si3N4研究

Study on Preparation of submicron β - si_3n_4 powder with low free silicon content by SHS

游离硅（fSi）的存在限制了RBSC材料的使用温度（＜1350℃）。

The existence of the free Si limits its summit use temperature .

高温热处理中的脱H过程有利于游离硅和游离碳的反应形成额外的Si&C键，促进薄膜致密，并能提高其在紫外部分的反射率，降低红外区域的反射率。

The dehydrogenation process during deposition can enhance the reaction between free carbon and free silicon to form additional Si-C bonds , which results in the densification of thin films . Furthermore , the reflection in the ultraviolet region increases , while the reflection in the near-infrared region decreases .

陶瓷产物在氮气下1600℃处理后的X射线衍射谱图表明，游离硅已基本消失，α-Si3N4衍射峰加强，但是没有观察到从α-Si3N4到β-Si3N4的相转变。

After further treatment at 1600 ℃ in nitrogen atmosphere , extremely weak diffraction peaks for free silicon and intense peaks for α - Si_3N_4 were observed by XRD patterns , however , there was no phase transition from α - Si_3N_4 to β - Si_3N_4 all along .

化学转化-气相色谱法测定氮化硅中的游离硅

Determination of Free Silicon in Silicon Nitride by Chemical Conversion-Gas Chromatography

碳化硅材料中游离硅及游离碳对性能的影响

The influence of free silicon and free carbon to Melt-infiltrated Silicon Carbide

GB/T16555.3-1996碳化硅耐火材料化学分析方法气体容量法测定游离硅量

Chemical analysis for silicon carbide refractories Determination of free silicon Gas volumetric method

建立了用化学转化-气相色谱法测定氮化硅中游离硅的分析方法。

A chemical conversion-gas chromatography was studied for the determination of free silicon in silicon nitride .

用逸氢热导法测定超细陶瓷粉中游离硅和游离铝

Determination of Free Silicon and Free Aluminum in Ultrafine Ceramic Powder by Hydrogen Evolution - Thermal Conductometry

模拟实验证实土壤中存在的游离硅是硅酸盐矿物异成分溶解的结果。

A simulating experiment on soil weathering showed that the free silicon comes from dissolution of silicate .

选用碳毡作为生坯，反应烧结碳化硅的显微组织特点是C/Si反应生成的碳化硅颗粒均匀细小，并呈线状分布在游离硅中；

Using carbon felt , the reaction formed SiC particles are small and uniform in size and distribution .

但是由于反应烧结碳化硅中含有一定量的游离硅，限制了反应烧结碳化硅的使用温度，降低了硬度等力学性能。

But the free silicon contained in RBSC restrains the working temperature of RBSC and reduces its mechanical properties .

结果表明：未浸渍树脂的碳毡硅化处理后的显微组织特点是反应生成的碳化硅颗粒细小且均匀分布在游离硅中；

Experimental results showed that when carbon felt was used as reactant , the reaction formed SiC particles were small and uniform in size and distribution .

本文论述了激光诱导化学气相沉积法制备纳米氮化硅的工作原理，提出了减少游离硅的措施；

In this article , the general principles of LICVD ( Laser Induced Chemical Vapor Deposition ) are investigated and measures to reduce dissociated Si are put forward .

结果表明：渗硅碳化硅材料中随游离硅含量的增加，其抗弯强度下降，并且二者呈直线关系，符合线性复合规则。

Experimental results show that the flexural strength of the melt_ infiltrated silicon carbide decreased linearly with increase of free silicon content , obeying the linear mixture rule .

对四种方案烧结制备的碳化硅陶瓷硬度分析表明，其数值随陶瓷中游离硅含量和分布不均程度的增加而减小。

After analyzing the hardness of silicon carbide prepared through the four different schemes , it could be found that the hardness of silicon carbide ceramics decreased with the increasing of content of free silicon and homogeneousness .

工业粉尘中游离二氧化硅及总硅量之测定

Methods of Determining Total Silica and Quartz in Industrial Dusts