沉积速率

溅射条件对Al2O3薄膜介电强度和沉积速率的影响

Dffect of sputtering condition on dielectric strength and deposition rate of al_2o_3 thin films

CdS膜沉积速率与电学性质关系的研究

Dependence of Electrical Properties of CdS Films on the Deposition Rate

~（210）Pb沉积速率测定法在浅水动力环境中的应用

Application of ~ ( 210 ) pb-method to shallow water environments

获得沉积速率对激光功率P的依赖关系，在一定的温度条件下，阈值功率为4W。

The dependence of the deposition rate on the laser intesity power has been obtained , at a given temperature , the threshold power is 4 W.

基于~（137）Cs的土壤沉积速率的定量模型

Quantitative Model of Soil Deposition Rate Constructed by Using ~ ( 137 ) Cs

海口、新海湾~（210）Pb法沉积速率的测定

The Determination of Depositional Rate on the Haikou and Xinhai Bays by ￣( 210 ) Pb Method

结果表明：碳氟混合气体等离子体在PET表面的沉积速率为正值，在PET表面形成了聚合物；

The results showed that CH4 / CF4 plasma results in for-mation and growth of polymerized layers on PET surfaces ;

工艺参数对CVDZnS沉积速率的影响

Effect of Technical Parameters on Deposition Rate of CVD ZnS

直接光CVDSiO2膜沉积速率的研究

Study of deposition rate equation of sio_2 film by direct photo CVD method

TiN和ZrN层的沉积速率随调制周期的变化而变化。

And the deposition rates of both TiN and ZrN also change .

结果表明，沉积速率随功率的增加而线性增加，随Ar气压强的增加呈非线性增加，基底无论加正偏压还是加负偏压都使沉积速率下降。

Results indicate that the deposition rate increases linearly with power and nonlinearly with pressure , decreases with substrate bias .

沉积速率随沉积压力的升高以及H2的加入而急剧增加。

The deposition rate increases obviously with the increase of deposition pressure and the addition of H_2 .

制备aSi∶H薄膜时，在衬底附近具有高的磁场梯度值可以得到高的沉积速率。

High deposition rate of a-Si ∶ H film is observed near by the substrate with high magnetic field gradient .

实验发现随着基板温度的增加，氮化硅薄膜的密度、折射率和Si/N比相应增加，而沉积速率和H含量相应减少；

With the increment of substrate temperature , the density , refractive index and Si / N ratio of SiNx film increase , but deposition rate and H content decrease .

在溅射过程，薄膜沉积速率和Al含量随Al的溅射功率增加而增大，而薄膜的粗糙度减小。

The increase of Al sputtering power resulted in the increase of the deposition rate and Al contents in the film , and the decrease of the film roughness .

研究了阴极电流密度、微粒浓度、pH值、搅拌方式和表面活性剂种类以及浓度等对镀层沉积速率的影响，为正确制定电镀工艺提供了依据。

The effects of cathodic current density , concentration of suspended nano-SiO2 powders , pH value , stirring style and concentration of surfactant agent on the deposition rate were studied .

采用非平衡磁控溅射法在316L不锈钢制成的血管支架表面制备Ti以及TiO2薄膜，初步研究了Ti薄膜厚度、TiO2薄膜沉积速率对薄膜在血管支架表面附着状况的影响。

In this paper the adhesion of Ti and TiO_2 films deposited on 316L stainless steel stent by unbalanced magnetron sputtering were studied .

沉积速率及相关工艺条件对直流反应磁控溅射制备TiO2薄膜性质的影响

Influence of Deposition Rate and Relative Parameters on Properties of TiO_2 Thin Films Prepared by DC Reactive Magnetron Sputtering

用~（210）Pb和~（137）Cs法测定洱海沉积物的年代和沉积速率

Determination of sedimentation rate and dating of sediment in Erhai Lake with ~ ( 210 ) pb and ~ ( 137 ) cs dating methods

溅射工艺参数对Ba（0.5）Sr（0.5）TiO3薄膜沉积速率和介电性能的影响

Effect of sputtering process on deposition rate and dielectrical properties of Ba_ ( 0.5 ) Sr_ ( 0.5 ) TiO_3 thin films

根据化学镀CoB薄膜试验得到镀液中反应物浓度、pH值、温度以及对应沉积速率。

The pH value , operation temperature and deposition rate were given for CoB thin film through the experiments in the plating solution .

沉积速率对EB-PVDNi-Cr薄膜表面形貌的影响

Effects of deposition rate on surface topography of Ni-Cr thin film deposited by EB-PVD

发现增大电流密度或者pH，钴-镍合金的沉积速率增大、所得镀层中的钴含量减少，镀层表面的晶粒粒径增大。

With the increase of the current density or the bath pH , the plating rate increased , but the content of Co in the deposit decreased , and the diameter of grain increased .

氩气虽然可以提高Ti（CN）膜的沉积速率，但降低了膜－基的结合牢度。

Argon can increase the depositing rate of Ti ( CN ) coatings , but it decreases the adhesion strength of Ti ( CN ) coatings .

镀液温度为75~80°C时沉积速率较大且较稳定，且当施镀温度为75°C时镀层表面均匀有光泽，呈银白色。

The deposition rate is quite fast and stable as the bath temperature is between 75 ~ 80 ° C , and the composite coating is uniform in luster and silver white when the bath temperature is 75 ° C.

用XPS和AFM分别分析了CHN薄膜中C和N的成分及表面形貌，并得到了一定条件下的薄膜沉积速率。

The surface configuration and the distribution of component were measured and analysed by AFM and XPS . And the aggradation velocity was also obtained under some conditions .

HNO3改性AC可以同时提高TiO2的沉积速率和其在AC外表面的浓度。

When AC modified by HNO_3 was used as the support , the deposition rate and the concentration of TiO_2 on the external surface of AC were simultaneously enhanced .

DBL理论模型及方解石溶解、沉积速率预报

The DBL model and prediction of calcite dissolution / precipitation rates

正交试验设计结果表明，溅射气压和射频功率是影响Y2O3薄膜沉积速率的主要因素，并由此确定了获得薄膜最大沉积速率的工艺参数。

The orthogonal experiment results show that the effects of RF power and gas pressure on the deposition rates is most significant , and the parameters to get high deposition rate are decided .

溅射气压及氧分压对自偏压的影响较小，但两者的增加将导致SiO2沉积速率的降低。

The sputtering pressure and oxygen partial pressure less affected the self bias , but an increase of the both resulted in decreasing of the deposition rate of SiO2 films .