光发射

本文在对差分吸收雷达的工作原理概括的基础上，制定了光发射系统的光源（TEACO2激光器）部分的总体方案。

Based on the working principle of differential absorption radar , it is reported to institute the project of lamp-house ( TEA CO_2 laser ) of light emission systems .

结的发光过程应该是隧穿电子激发表面等离极化激元SPP，然后SPP与粗糙度耦合形成光发射。

And the coupling of SPP with the surface roughness is responsible for light emission of the MIM and MIS tunnel junctions .

与CMOS工艺兼容的硅基光发射器件研究进展

Research Progress of Si Light Emitting Devices in Standard CMOS Technology

测试结果表明，转换集成电路数字逻辑部分的全部功能用FPGA实现，研制的12通道并行光发射模块传输带宽达12？

The converter IC is realized using FPGA . Its transmission bandwidth reaches to 12 ?

Si基光发射材料的探索

Explorations on Si-based Light Emitting Materials

ATP跟瞄精度与最佳信号光发射角的研究

Study of ATP Accuracy and the Optimum Optical Signal Transmitting Angle

TEACO2激光器是差分吸收雷达的理想光源，是光发射系统的核心部件。

TEA CO_2 laser is ideal lamp-house of the differential absorption radar and the core component of optical emission systems .

GaN基光发射二极管中深能级研究

Study of the Deep Level in GaN-based Light Emitting Diode

GaN的宽带黄光发射研究

Studies of broadband yellow luminescence of GaN Coherence of light

非掺杂GaN薄膜的黄光发射机理研究

Mechanism of Yellow Photoluminescence in Undoped GaN Films

采用环形LED红光光源作为照明系统，抑制金属触点的光发射对成图质量的影响。

LED red light source is applied as lighting system to keep the light emission of metal contact points from influencing the imaging quality .

但是对于纳米结构的ZnO来说，由于存在与表面缺陷相关可见光发射，阻碍了它在紫外发射器件上的应用。

While the correlation between the surface defects and visible luminescence of ZnO nanoparticles hinders the application in ultra-violet devices .

DWDM光纤通信网络中光发射单元的智能化监控

Performance Monitoring of Optical Transmit Unit in DWDM Optical Networks

（Si，Er）双注入热氧化SiO2/Si薄膜的表面结构及1.54μm光发射

Surface Structure and 1.54 μ m Light Emission of Silicon Plus Erbium Dual-Implanted Thermal SiO_2 / Si Thin Film

EPON系统中突发式光发射模块及关键技术研究

Research on the Burst Mode Optical Transmitter in EPON System and Its Key Technology

采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。

Using a new kind of liquid-phase epitaxy technology , V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated .

MOS隧道结的光发射

Light-emitting of MOS tunnel junction

而表面覆盖蓝宝石基板退火的样品，有效去除了氢杂质，但没有观察到可见光发射，说明表面覆盖蓝宝石基板退火可以有效地保护ZnO表面不分解，不生成深能级中心。

In the surface-covered annealed sample , an elimination of the hydrogen impurities is also observed , and the deep-level emission disappears completely .

直流弧光放电化学气相沉积（CVD）法制备金刚石薄膜及其等离子体的光发射谱原位测量

Preparation of diamond films by DC arc discharge and in situ measurements of the plasma by optical emission spectra

SiGe量子阱和超晶格的光发射

Luminescence of SiGe Quantum Wells and Superlattices

采用工业标准06μMCMOS工艺设计了以反向击穿硅pn结为基础的光发射器件。

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6 μ m industrial CMOS technology .

基于VCSEL的光发射模块的研究与设计

Research and design of optical transmitter module based on VCSEL

用金属蒸气真空弧离子源（MEVVA）制备高浓度掺铒硅发光薄膜，研究高浓度Er掺杂发光薄膜中Er的偏析与沉淀现象对154μm光发射的影响。

Er doped silicon thin films were synthesized using metal vapor vacuum arc ( MEVVA ) ion source .

Si基材料光发射的研究是当前半导体光电子学与光子学中迅速发展起来的一个前沿领域，Si基量子点的光发射是近年来极引人注目的新研究方向。

The study of Si-based materials light emitting is a new leading field in semiconductor optoelectronics and photonics . The light emitting if Si-based quantum-dot is attractive research direction .

光发射显微镜（PEM）是90年代发展起来的一种高灵敏度、高分辨率的新型缺陷定位分析技术。

Photo Emission Microscope ( PEM ) is a high resolution technology developed in 90 ' s.

另外，橄榄状的ZnO纳米粒子在383nm处表现了很强的紫外发射峰，522nm处表现出弱的绿色光发射峰。

Besides , the olive-like ZnO nanoparticles exhibit a very strong ultraviolet emission centered at 383 nm and a weak green luminescence emission at around 522 nm .

用光发射谱（OES）和喇曼散射谱（Raman）研究了VHFPECVD制备硅薄膜的结构特性。

Structural properties of silicon thin film deposited by VHF-PECVD were studied using OES and Raman spectroscopy .

Er的偏析、沉淀以及辐照损伤等因素会影响掺铒硅薄膜的154μm光发射。

54 μ m light emitting signals from Er doped Si thin films are influenced by such the factors as Er segregation , precipitation and irradiation damage etc.

对光发射模块的两个主要器件&掺铒铌酸锂（Er∶LiNbO3）波导激光器和LiNbO3电光调制器进行了结构设计和分析。

The configuration of the two important devices & Er ∶ LiNbO_3 waveguide laser and LiNbO_3 electro-optic modulator of the optical transmitter modules is designed and studied .

光发射聚脂（lep）是场致发光的一个变种。

Light emitting polymers ( LEP ) is a variation of EL .