光刻技术

本研究采用ITO与紫外光刻技术构建了一种新型ITO微孔电极和ITO阵列微孔电极，将该电极用于神经递质的测定，取得较好的效果。

The author manufactured a new type of ITO micro-pore electrochemical sensor and ITO array micro-pore electrode , using ITO and UV-light photolithography technology . When the electrode was applied to the assay of neurotransmitter , the desired result was achieved .

从策略上把组合法应用于VUV荧光材料研究，将大大加快VUV荧光材料研究进程。与物理掩模或光刻技术相结合的薄膜沉积和液相法是组合材料合成最常用的方法。

The development on VUV phosphors research will be improved greatly with combinatorial approach adopted . Among various parallel synthesis strategies , thin film deposition combined with a physical mask ( or photolithography ) and solution based synthetic methods are the most commonly used techniques .

0.5μm分辨率同步辐射X射线光刻技术

Synchrotron Radiation X Ray Lithography Technique for 0.5 μ m resolution

紫外厚胶光刻技术在3-DMEMS电感中的应用

UV Lithography of SU-8 Photoresist and Its Application in 3-D MEMS Inductors

软X射线投影光刻技术

Soft X-ray Projection Lithography Technology

化学放大胶（ChemicallyAmplifiedResists，简称CARs）是下一代光刻技术中极具发展潜力的一种光学记录介质。

Chemically amplified resists ( CARs ) are the most promising optical recording materials for the next generation lithography .

Si（100）表面STM电子束光刻技术的研究

Research on Electron Beam Lithography on Si ( 100 ) Surface with STM

光刻技术在PVDF压电薄膜电极制作中的应用

Application of photoetching technology on the fabrication electrodes made PVDF piezoelectric-film

采用热丝CVD法和光刻技术能制造出边缘整齐、质量好、性能好的掺硼金刚石薄膜微阵列电极。

The BDD micro-array disc electrode prepared using HFCVD and photo-etching was in good quality .

介绍了电子束曝光技术、EUV光刻技术和X射线光刻技术的进展；

Some progress on top-down nano-fabrication , such as electron beam lithography , X-ray lithography and EUV lithography were introduced .

介绍了IH系列立体光刻技术。

A series of IH technologies are introduced .

研究了利用光刻技术在石英片上制作用于LDA光纤束耦合的V形槽阵列的工艺。

The fabrication process of silica based V groove array with optical lithography for fiber bundle coupling of laser diode array is investigated .

应用于PHEMT器件的深亚微米T形栅光刻技术

Deep-submicron T-shaped gate lithography technology for PHEMT device

针对目前微电子机械系统（MEMS）制造中存在的三维加工能力不足的问题，将压印光刻技术和分层制造原理相结合，研究了三维MEMS制造的新工艺。

Based on the nano-imprint lithography ( NIL ) combining with layered manufacture principle , a novel three-dimensional micro-electronic mechanical system ( MEMS ) fabrication process is investigated .

ULSI相移光刻技术

Phase Shifting Lithography for ULSI Applications

ArF浸没式光刻技术研究及光刻仿真辅助设计软件开发波导多层只读光卡及其软刻印制作方法研究

Study of ArF Immersion Lithography and Development of Optical Lithography Simulator ; Waveguide Multiplayer Optical Card ROM and its Soft Lithography Fabrication

简述了IC生产加工中光学光刻技术的重要性，发展历程以及发展趋势，对非光学光刻技术的应用作了描述。

This paper abstracts the importance of photolithographic technology of IC manufacture , so the growing course and trend , too . Simultaneously , it describes the application of non-optical photolithographic technology .

LDD和SOI结构；移相掩模光刻技术和多层金属布线工艺。

The short channel effects , the structure of LDD and SOI , phaseshift mask and multilevel interconnection were included .

光刻技术是推动集成电路制造业不断向前发展的关键技术，X射线光刻技术是下一代光刻技术的一种，具有产业化的应用前景。

Lithography technique has been the key point to push forward the USL fabricator . X-ray lithography ( XRL ) is one of the next generation lithography techniques ( NGL ), which has the probability of industrialization .

近年来，空间光调制器（SLM）无掩模光刻技术受到微电子及相关领域的广泛关注。

In recent years , optical maskless lithography technique based on spatial light modulator ( SLM ) has been attracted wide attentions .

介绍了全内反射（TIR）全息光刻技术的发展情况、基本原理以及其中的关键技术。

The developmental course , basic principle and key technologies of holographic lithography with total internal reflection are presented .

依据合肥国家同步辐射实验室的LIGA深度光刻技术，给出可行的几何形状。

With the support of the deep lithography technology LIGA in NSRL , Hefei , a number of feasible geometrical figure designs are presented .

近年来，由于X射线光刻技术，空间技术，以及激光引爆的惯性约束聚变（ICF）的过程诊断等的需求，X射线成像技术迅速发展。

In the latest years , x-ray imaging technology has developed fast in order to meet the need of x-ray photo-etching , spatial exploration technology , high-energy physics , procedure diagnosis of inertial confinement fusion ( ICF ) etc.

随着深紫外准分子激光光刻技术的发展，所用CaF2光学晶体镜头材料的加工对传统的冷加工技术提出了挑战。

With the development of far UV laser lithography technique , the processing of CaF2 single crystals lens material challenged traditional cool procession technique .

介绍了深紫外光刻技术、电子束光刻技术、X射线光刻技术以及与这些技术相关的一些单元技术的最新进展，概要介绍了这些技术最热门的研究课题，阐述了这些技术的发展前景。

Abstract The latest advances of deep UV microlithography , electron beam microlithography , X ray microlithography and some related unit techniques are presented in the paper . The most interested research items in these technologies and their developing prospects are described in brief .

193nm浸液式光刻技术现状

Current Status and Future Prospect of 193 nm Immersion Lithography

引进与平面图案变形扭曲大小相称的角度参数θ，提出了一种对软光刻技术中PDMS印章的角度平面扭曲进行定量评价的方法。

An angular quantification method of planar distortion for PDMS stamps in soft lithography was proposed by introducing angular parameter θ that was proportional to patterns planar distortion in magnitude .

成像干涉光刻技术（IIL）具有干涉光刻技术（IL）的高分辨力和光学光刻技术（OL）产生任意形状集成电路特征图形的能力。

Imaging Interferometric Lithography ( IIL ) has high resolution of interferometric lithography ( IL ) and ability for printing arbitrary patterns of optical lithography ( OL ) .

为了解决软光刻技术中核心元件弹性印章的制备技术，对SU-8胶印模和聚合物弹性印章进行了工艺研究。

Processes of SU-8 photoresist mold and polymer elastomeric stamp were researched in order to solve the technology of the key part & elastomeric stamp in the soft-lithography .

传统的光学光刻技术由于受光波波长和数值孔径等因素的限制难于制作特征尺度小于100nm的图案。

Due to the restrictions of light wavelength and numerical aperture , conventional lithography is difficult to obtain sub - 100 nm patterns .