元素半导体材料
- 网络elemental semiconductor material;element semiconductor materials
元素半导体材料-
碳化硅（SiC）半导体材料是自第一代元素半导体材料（Si）和第二代化合物半导体材料（GaAs、GaP、InP等）之后发展起来的第三代宽带隙半导体材料。
Silicon Carbide ( SiC ) is one of the third generation of semiconductor materials following the progress of the first generation of element semiconductors ( such as Si ) and the second generation of compound semiconductors ( such as GaAs , GaP and InP ) .
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采用射频溅射方法成功制备了由过渡族元素Fe和半导体材料In2O3交替生长构成的Fe/In2O3/Fe多层膜。
Fe / In2O3 / Fe multilayer films have been prepared by RF sputtering method .
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Te-Bi-Se稀散元素化合物半导体制冷材料的合成及应用研究
Synthesis and Application of Te Bi Se Semiconductor Cooling Materials