二氧化硅
- silica
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矿山呼吸性粉尘中游离二氧化硅的X射线衍射仪测定法
X-ray Diffraction Method to Determine Free Silica Content in Mine Respirable Dust
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采用二氧化硅微球法回收DNA的实验研究
Study on DNA recovery by silica beads
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X射线在重金属-二氧化硅界面的剂量增强的模拟计算
Simulative calculation of the dose enhancement factor of W-SiO_2 and Ta-SiO_2 interface
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纳米二氧化硅表面接枝的X射线光电子能谱研究
XPS of Modified Nano-SiO _ 2 by Surface Grafting
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SEM分析表明,二氧化硅凝胶存在于木材细胞空隙中。
SEM analysis showed that silicon dioxide occupied free space of wood .
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目的:研究P型纳米二氧化硅载银抗菌粉抗真菌效果及耐热性和稳定性。
Objective : Study the effect of anti-Fungus , high temperature resistance and stability of with Model P 's nanometer added with silver .
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TEM表明纳米二氧化硅在聚氨酯弹性体中有很好的分散性。
TEM result indicates that nano-silica is well dispersed in polyurethane matrix .
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通过原位分散聚合法制得了环氧树脂/纳米二氧化硅(nmSiO2)复合材料。
Nm SiO 2 / EP composites were prepared by in-situ dispersion polymerization .
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用新型Sol-gel法制备酚基吡啶硼配合物/二氧化硅复合玻璃
Preparation of Pyridine-phenol Ligand Doped Silica Composite Glass by a New Sol-gel Process
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二氧化硅碳还原法制取Si3N4粉的研究
The Investigation of Preparing Si_3N_4 Powder by Carbon Reduction From SiO_2
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结果表明:经表面处理后的超细二氧化硅可以有效改善PVC的力学性能。
The results show that the surface treatment superthin-SiO2 can efficiently improve the mechanical properties of PVC .
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研究表明,催化剂浓度升高或采用二氧化硅替代P型硅为生长基底时,都会导致单壁碳纳米管生长的密度加大,而碳纳米管长度变短且更易贴附基底表面生长;
Increase in catalyst concentration or silicon dioxide replacing P-type silicon as substrate could lead to denser SWNTs , shorter SWNTs and decrease in erect SWNTs on surface .
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利用介孔二氧化硅为载体,将罗丹明B(RhB)分子嵌入其中,获得了纳米复合材料。
The nanocomposites were obtained by embedded RhB in the pores of mesoporous silica .
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检测结果表明,只要采用恰当的工艺,V形槽腐蚀并不伤害槽壁上热生长的二氧化硅膜。
Results indicate that the films of SiO_2 grown on groove wall were not harmed by the processing of V-groove etching .
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采用DSC方法研究了纳米二氧化硅(SiO2)填充线性低密度聚乙烯(LLDPE)的熔融特性。
The melt property of LLDPE filled with nano-scale SiO 2 was studied .
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含纳米二氧化硅的PA6纤维的结构和性能研究
Study on structure and properties of PA6 fiber containing nano-silica
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本文通过FTIR证实了纳米二氧化硅表面聚苯乙烯层的存在。
Nano silica layer on the surface of polystyrene was demonstrated by FTIR in this paper .
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热重分析(TG)说明复合球体的硅含量随着所组装的纳米二氧化硅的粒径的增加而增加;
TG revealed that silica content within the composite microspheres increased with the assembled nano silica diameter .
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这里通过调整PS膜层的厚度,来控制二氧化硅微球掩蔽区域的大小。
Here , it allows control the masked area of silica by adjusting the thickness of PS film .
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硅基二氧化硅波导和SOI脊型波导应力双折射研究
Analysis of Stress Birefringence for Silica Waveguide on Silicon and SOI Rib Waveguide
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用AES表面分析技术研究了热氮化二氧化硅膜的结构。
The structure of the films was analyzed byz the surface analysis method of AES .
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研究一种新型天然高分子催化剂,二氧化硅负载羧甲基纤维秦钯络合物(Si-CMC-Pd)的催化加氢性能。
Catalytic hydrogenation behaviors of a novel natural polymer-supported catalyst , silica-supported carboxymethyl cellulose-palladium complex , have been investigated .
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利用射频磁控共溅射技术在Si(111)衬底上沉积金属锌/二氧化硅基质(Zn/SiO2)复合薄膜。
Metal Zn / SiO_2 matrix composite thin films were deposited on Si ( 111 ) substrates with radio frequency ( RF ) magnetron sputtering .
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采用TEM、XRD对二氧化硅/镍复合球和镍空心球进行了表征和研究。
The nickel-coated silica spheres and the hollow nickel spheres were characterized by transmission electron microscopy ( TEM ), X-ray diffraction ( XRD ) .
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接着,利用自身重力热压,二氧化硅微球部分陷入到PS膜中,得到部分掩蔽的二氧化硅微球阵列。
Then , silica microspheres were sank into polymer to obtain partially masked silica array through heat treating due to their own gravity .
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讨论了二氧化钛-二氧化硅复合光催化剂的最佳制备条件,并用XRD、XPS、TEM、BET等手段对样品进行了表征。
The optimum preparing conditions of the TiO_2-SiO_2 composite photo-catalyst are discussed and the specimen is characterized by XRD , XPS , TEM and BET .
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采用溶胶凝胶法(SOLGEL)制备了二氧化硅不同质量分数的聚酰亚胺/二氧化硅(PI/SiO2)纳米复合薄膜。
A series of polyimide / silica ( PI / SiO_ 2 ) nanocomposite films with different silica contents were successfully prepared by Sol Gel reaction .
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采用荧光分光光度计、Zeta电位仪以及透射电子显微镜对修饰前后的二氧化硅纳米颗粒进行表征。
The fluorescence spectrophotometer , zeta sizer and TEM have been used to characterize the fluorescent silica nanoparticles .
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结果表明,边界热阻在SOI器件尤其是薄二氧化硅背栅的双栅器件热阻的计算中不可忽略。
The results show that the boundary resistance cannot be neglected in the calculation of thermal resistance for SOI devices .
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采用二氧化硅/碳化硅复合靶,用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅纳米颗粒/二氧化硅基质(nc-SiC/SiO2)镶嵌结构薄膜材料。
SiC nanocrystals embedded in SiO2 matrix on Si ( 111 ) substrates were prepared by RF magnetron co-sputtering with a SiO2 / SiC composite target and subsequent high temperature annealing .