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Study of Nonlinear Optical Property in InGaN / GaN Quantum Well

InGaN/GaN量子阱中的非线性光学性质研究

Calculation of the Critical Layer Thickness for GaN / InGaN

GaN/InGaN应变层临界厚度的计算

Improving the quantum well properties with n-type InGaN / GaN superlattices layer

引入n型InGaN/GaN超晶格层提高量子阱特性研究

Experimental and theoretical study of blue InGaN / GaN multiple quantum well blue light-emitting diodes

InGaN/GaN多量子阱蓝色发光二极管的实验与模拟分析

Studies of Third-order Nonlinear Optical Susceptibility in InGaN / GaN Quantum Dot

InGaN/GaN量子点中三阶非线性光学极化率的研究

MOVPE Growth of InGaN / GaN Single Quantum Well Structures Green Light-emitting Diodes

MOVPE生长InGaN/GaN单量子阱绿光LED

Reduce Ohmic Contact Resistance to p-GaN Using InGaN / AlGaN Superlattice

用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻

Electrical and optical properties of InGaN / AlGaN double heterostructure blue light emitting diodes

InGaN/AlGaN双异质结构蓝光LED的电学和光学性质

Study of temperature dependent electroluminescence of InGaN / GaN multiple quantum wells using low temperature scanning near-field optical microscopy

低温近场光学显微术对InGaN/GaN多量子阱电致发光温度特性的研究

Photoluminescence of InGaN / AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

刻蚀改变InGaN/AlGaN应变多量子阱发光特性

Electrical Characteristics of InGaN / GaN MQW Blue Light-emitting Diodes

InGaN/GaN多量子阱蓝光LED电学特性研究

Effects of Growth Interruption on the Properties of InGaN / GaN MQWs Grown by MOCVD

生长停顿改善MOCVD生长InGaN/GaN多量子阱的特性

Processing and Characteristics of InGaN / AlGaN Double Heterojunction Structure and of GaN Buffer Layer Grown by MOCVD Techniques

MOCVD生长InGaN/AlGaN双异质结构与GaN过渡层的工艺与特性

InGaN / AlGaN DH Blue and Green LED

InGaN/AlGaN双异质结蓝光和绿光发光二极管

It is of great importance to reduce the influence of polarization effect for improving the performance of InGaN / GaN MQWs solar cells .

改善极化效应对于提升InGaN/GaN多量子阱太阳能电池的性能至关重要。

Investigations of p-GaN cap layers of InGaN / GaN MQW Blue LEDs grown by MOCVD

InGaN/GaN多量子阱蓝光LED的p-GaN盖层的MOCVD生长研究

The related results were as follows : ( 1 ) Contact scheme design of p-GaN and effects on InGaN / GaN MQWs solar cells .

有关研究结果如下：（1）研究了电流扩展层对InGaN/GaN多量子阱太阳电池的影响。

P-i-n solar cells with InGaN / GaN multiple quantum wells ( MQWs ) as effective absorption region is a major research topic of III-Nitride based solar cells .

使用InGaN/GaN多量子阱作为有效吸收区的p-i-n型太阳电池是Ⅲ族氮化物基太阳电池的研究方向之一。

It is reported that the white light emitting diodes are fabricated by combining Ce3 + : YVO4 fluorescence and InGaN / GaN blue LED .

本文报导了通过结合自行制备的掺铈钒酸钇晶体（Ce3+：YVO4）荧光粉与InGaN／GaN蓝光发光二极管（LED）结合而得的白光发光二极管（W-LED）。

For example , light emitting diodes ( LEDs ) and lasers using InGaN / GaN and AlGaN / GaN heterostructures have already been demonstrated .

例如应用于InGaN/GaN和AlGaN/GaN异质结的发光二极管和激光二极管已经开发成功。

InGaN / GaN MQWs structures were grown by MOCVD . The effects of the growth interruption time on the optical and structural properties of InGaN / GaN MQWs were investigated .

利用金属有机物化学气相淀积（MOCVD）生长了InGaN/GaN多量子阱（MQWs）结构，研究了生长停顿对InGaN/GaNMQWs特性的影响。

InGaN / AlGaN multi-quantum wells ( MQWs ) were grown on sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy ( RF-MBE ) .

使用射频等离子体辅助分子束外延方法，在蓝宝石衬底上外延生长了InGaN/AlGaN多量子阱。

Therefore , this paper focuses on the following works . 1 . Metal organic chemical vapor deposition ( MOCVD ) growth of Si-doped InGaN / GaN quantum well superlattice sacrificial layer for the LED structure .

因此，本文围绕选择性剥离GaN外延做了如下四方面工作：1.金属有机化学气相沉积（MOCVD）生长具有Si掺杂的InGaN/GaN量子阱超晶格牺牲层的全结构的LED。

Subsequently , the theoretical model of the hydrogenic impurity states in wurtzite symmetric ZnO / MgZnO coupled quantum dots and zinc-blende symmetric InGaN / GaN multiple quantum dots are showed in this paper .

随后给出了纤锌矿对称ZnO/MgZnO应变耦合量子点和闪锌矿对称InGaN/GaN多量子点中的杂质态理论模型。

InGaN / GaN multiple quantum wells ( MQWs ) structure is the preferred heterostructure for the fabrication of blue / green light emitting diodes ( LEDs ) and laser diodes ( LDs ) .

InGaN/GaN多量子阱（MQWs）结构是当前制造蓝绿光发光二极管（LED）和激光二极管（LD）的首选异质结构。

In order to investigate the carrier dynamic characteristics , the carrier lifetime were also obtained by TRPL . The main research work and results are as follows : 1 . Temperature dependence of the PL spectra was studied in InGaN / GaN MQWs .

还通过TRPL光谱得到了载流子复合寿命以分析载流子复合寿命等动态特性，文章主要内容包括如下：1.研究了光致发光的温度依赖性。

By light-assisted electrochemical wet-etching of the sample , and the results showed that KOH solution can be laterally etched GaN epitaxial film . But the etching liquid also damage the InGaN / GaN multiple quantum wells ( MQWs ) . 2 .

利用光辅助电化学湿法对样品刻蚀，结果表明：KOH溶液能够侧向刻蚀GaN外延膜，但是刻蚀液会损伤InGaN/GaN量子阱层。

The resonant third-order susceptibilities at various directions in self-assembled InGaN / GaN cylinder quantum dots and the size distribution of dots , which affects the susceptibilities dramatically have been both investigated . Due to stronger build-in electric field , the piezoelectricity has been taken into account in this thesis .

本文主要研究了由于压电场的存在，InGaN/GaN柱形量子点中不同方向的三阶非线性极化率，量子点的尺寸分布对三阶极化率的影响以及量子点中的激子。