igct

Study of Property of New type Power Semiconductor Apparatus & IGCT

新型功率半导体器件&IGCT性能研究

A high voltage supply module applied to IGCT performance test is designed .

设计了模块化的高压电源，并用于对IGCT的高压测试。

The New Type High-power Semiconductor Switching Device & IGCT and Its Application Prospects in Coal Mine

新型大功率半导体开关器件IGCT及其在煤矿中的应用前景

With the experiment of IGCT devices and the converter system , the working performance of the converter is verified .

对IGCT元件及变流器系统进行试验，检验该变流器的工作性能。

The paper introduces the operation principle and key technology of the Integrated Gate Commutated Thyristor ( IGCT ) .

阐述了新型功率半导体器件&集成门极换向型晶闸管IGCT（IntegratedGateCommutatedThyristor）的基本工作原理和关键设计技术。

The paper firstly presents the structure of IGCT test bench and its two cabinets for high-voltage producing and test circuit .

文章首先讲述了IGCT测试台的结构组成，分别设计了用于高压产生和高压测试的两个机柜。

Based on technical characteristic of mine-well hoists , IGCT is used to be chopper .

针对矿井提升机的工艺特点，斩波开关器件选用IGCT器件。

IGCT is a kind of high power semiconductor based on GTO structure , which achieves hard turn-off by the integrated gate circuit .

IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。

Characteristics of the transparent anode for the integrated gated commutated thyristor ( IGCT ) is analyzed and numerically simulated .

分析了集成门极换向型晶闸管（IGCT）的透明阳极相对于传统阳极的特点，并进行了数值模拟。

For IGCT or GTO , the overcurrent protection is generally implemented in the main circuit , which brings complex main circuit , high cost and great volume .

IGCT或者GTO的过电流保护一般在主电路中实现，使主电路复杂、成本高、体积大。

The basic principle of novel device IGCT is described . A new PWM scheme of a IGCT_PWM speed regulation system and compensating other load reactive power are introduced .

分析了新型器件集成门极换向晶闸管IGCT的原理，并介绍IGCT-PWM调速系统的PWM波生成新方法和其它负荷无功的补偿。

Relationship between the main parameters and commutation time is analyzed , based on which , switch-off process after the commutation is described and IGCT commutation mechanism is illustrated .

分析了主要参量与换流时间的关系，在此基础上，描述换流后的关断过程，阐明IGCT的换流机理。

Integrated Gate Commutated Thyristor ( IGCT ) super charge control model is developed by applying the general charge control equation to the device . The turn off currents are simulated and as a result , their waveforms tally with the measuring waveforms with given parameters .

以电荷控制方程而建立的IGCT综合型电荷控制模型，经关键性的关断电流和关断电压进行了仿真分析，所得结果与实际结果吻合。