VPE

The Preparation of GaAs VPE Multilayer Material with High Quality for GaAs MESFET Power Device

用于砷化镓功率MESFET器件的优质多层汽相外延材料的制备

Study of the Width of the Transition Region between GaAs Active and Buffer Layers Grown by VPE

GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究

Residual acceptor impurities in high purity LPE and VPE GaAs

高纯度砷化镓外延薄膜剩余受主杂质的研究

Also , members on the schedule must confirm their participation to the VPE and Toastmaster .

在议程上有任务的会员，必须要与教育副会长及例会总主持人做确认。

For clubs that assign roles , consistent communication between the VPE and membership is vital .

指派角色安排，对分会来说，教育副会长和会员之间，不断的联系是很重要的。

The stoichiometry of the material cannot be readily adjusted as is the case with VPE .

材料的化学比不象VPE法一样容易进行调节。

Raman scattering in Gan grown by VPE

气相外延GaN的拉曼散射

Uniformity of Zn doping in GaN by VPE

GaN中Zn的均匀掺杂

This paper describes the design environment of virtual prototype ( VPE ) for weapon system which is becoming more and more important in the process of weapon system design .

根据当前武器系统设计的需要，对武器系统虚拟样机设计环境进行了讨论。

Growth and Photoluminescence of VPE zns_xse_ ( 1-x ) epilayers

VPEZnSxSe（1-x）外延膜的生长及其光致发光

The characterization and thermal annealing behavior of deep-level defects in 1 MeV neutron irradiated VPE n-GaAs layers have been studied .

本文研究了1MeV中子辐照在气相外延n-GaAs有源层中深能级缺陷的特性和热退火性能。

The current level of MBE material ( GaAs . Si and InGaAsP etc. ) can be compared with LPE 's and VPE 's.

MBEGaAs、Si和InGaAsP等材料的水平已可与VPE和LPE的相比。

Verbal phrase ellipsis ( VPE ), a phenomenon of ellipsis , has drawn many linguists ' attention , especially in the literature of generative grammar .

动词短语省略，作为一种省略现象，吸引了众多语言学家（尤其是句法学领域）的注意。

Juggling this system can frustrate the VPE , the Toast masters of the respective meetings and others , because the schedule often undergoes last-minute changes .

使用这种方式，对教育副会长、例会总主持人、以及其他的会员来说，都是很挫折的，因为在最后一分钟，还是要修改例会的议程。

Most of them agree on the analysis of English-like VPE , and they think that it can be treated on a par with English VPE .

对于后者，大多数学者都有一致的分析，认为这种动词省略类似于英语中的动词省略现象，因此可以类比分析。

This work presents the growth apparatus of VPE multilayer GaAs and outlines the experimental technique and some results of experiments for preparation of multilayer GaAs layer in a reactor of two chambers .

本文提出了一种研制多层GaAs汽相外延的装置，概述了用双室反应管制备多层GaAs薄膜的实验方法及部分结果。

The detailed system structure is introduced in the paper , from mainframe to driver and from Visual Program Editor ( VPE ) to algorithms of line ( or Arc in Dataflow Language ) routing .

文中不仅介绍了可视化开发环境主要框架结构以及与E语言特点相关的驱动程序结构，而且还描述了程序编辑器和画线算法。

On the basis of the undoped LEC-SI-GaAs single crystal , the low Cr-doped SI-GaAs single crystals were grown . The performances of devices fabricated using VPE and implantation on this materials are excellent .

在SIGaAs非掺杂单晶生长基础上，生长了一种轻掺铬的SIGaAs单晶，并在VPE等应用中取得了较好结果。

Each District council member has one ballot including each club president and VPE , Area governor , Division Governor , District secretary , treasurer , PR officer , LGM , LGET , IPDG and District governor .

总监、秘书长、财务长、公关长、推广副总会长、教育副总会长、前总会长、以及总会长等。

Chief manifestation of inhibitory type as below : pump function was inhibited [ stroke volume de - creased , valid pump effort ( VPE ) of left heart decreased , left ventriculus work index ( LVWI ) decreased ] , peripheral resistance increased , blood viscosity increased .

抑制型主要表现为泵功能受抑制[心搏出量（SV）减少，左心有效泵力（VPE）降低，左心搏功指数（LVWI）降低]，外周阻力增高，血粘度增高。

From the I-V characteristic curve the ideal factor ( n ) of 1.4 and the barrier height of more than 0.75 eV are obtained . The carrier concentration profiles of N-type Inp VPE layers were measured by using the mercury probe C-V method combined with the anodic oxidation etching .

从I-V特性曲线计算出二极管的理想因子n值为1.4，势垒高空>0.75eV.用汞探针和阳极氧化逐层剥离的方法测得了N型InP气相外延载流子浓度的纵向分布。