VPE
- abbr.视频(信号)处理设备(Video Processing Equipment);车辆定位设备(Vehicle Positioning Equipment);(微软)视频端口扩展(Video Port Extensions)
![VPE](../cache/740217.jpg)
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The Preparation of GaAs VPE Multilayer Material with High Quality for GaAs MESFET Power Device
用于砷化镓功率MESFET器件的优质多层汽相外延材料的制备
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Study of the Width of the Transition Region between GaAs Active and Buffer Layers Grown by VPE
GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究
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Residual acceptor impurities in high purity LPE and VPE GaAs
高纯度砷化镓外延薄膜剩余受主杂质的研究
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Also , members on the schedule must confirm their participation to the VPE and Toastmaster .
在议程上有任务的会员,必须要与教育副会长及例会总主持人做确认。
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For clubs that assign roles , consistent communication between the VPE and membership is vital .
指派角色安排,对分会来说,教育副会长和会员之间,不断的联系是很重要的。
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The stoichiometry of the material cannot be readily adjusted as is the case with VPE .
材料的化学比不象VPE法一样容易进行调节。
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Raman scattering in Gan grown by VPE
气相外延GaN的拉曼散射
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Uniformity of Zn doping in GaN by VPE
GaN中Zn的均匀掺杂
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This paper describes the design environment of virtual prototype ( VPE ) for weapon system which is becoming more and more important in the process of weapon system design .
根据当前武器系统设计的需要,对武器系统虚拟样机设计环境进行了讨论。
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Growth and Photoluminescence of VPE zns_xse_ ( 1-x ) epilayers
VPEZnSxSe(1-x)外延膜的生长及其光致发光
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The characterization and thermal annealing behavior of deep-level defects in 1 MeV neutron irradiated VPE n-GaAs layers have been studied .
本文研究了1MeV中子辐照在气相外延n-GaAs有源层中深能级缺陷的特性和热退火性能。
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The current level of MBE material ( GaAs . Si and InGaAsP etc. ) can be compared with LPE 's and VPE 's.
MBEGaAs、Si和InGaAsP等材料的水平已可与VPE和LPE的相比。
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Verbal phrase ellipsis ( VPE ), a phenomenon of ellipsis , has drawn many linguists ' attention , especially in the literature of generative grammar .
动词短语省略,作为一种省略现象,吸引了众多语言学家(尤其是句法学领域)的注意。
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Juggling this system can frustrate the VPE , the Toast masters of the respective meetings and others , because the schedule often undergoes last-minute changes .
使用这种方式,对教育副会长、例会总主持人、以及其他的会员来说,都是很挫折的,因为在最后一分钟,还是要修改例会的议程。
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Most of them agree on the analysis of English-like VPE , and they think that it can be treated on a par with English VPE .
对于后者,大多数学者都有一致的分析,认为这种动词省略类似于英语中的动词省略现象,因此可以类比分析。
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This work presents the growth apparatus of VPE multilayer GaAs and outlines the experimental technique and some results of experiments for preparation of multilayer GaAs layer in a reactor of two chambers .
本文提出了一种研制多层GaAs汽相外延的装置,概述了用双室反应管制备多层GaAs薄膜的实验方法及部分结果。
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The detailed system structure is introduced in the paper , from mainframe to driver and from Visual Program Editor ( VPE ) to algorithms of line ( or Arc in Dataflow Language ) routing .
文中不仅介绍了可视化开发环境主要框架结构以及与E语言特点相关的驱动程序结构,而且还描述了程序编辑器和画线算法。
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On the basis of the undoped LEC-SI-GaAs single crystal , the low Cr-doped SI-GaAs single crystals were grown . The performances of devices fabricated using VPE and implantation on this materials are excellent .
在SIGaAs非掺杂单晶生长基础上,生长了一种轻掺铬的SIGaAs单晶,并在VPE等应用中取得了较好结果。
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Each District council member has one ballot including each club president and VPE , Area governor , Division Governor , District secretary , treasurer , PR officer , LGM , LGET , IPDG and District governor .
总监、秘书长、财务长、公关长、推广副总会长、教育副总会长、前总会长、以及总会长等。
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Chief manifestation of inhibitory type as below : pump function was inhibited [ stroke volume de - creased , valid pump effort ( VPE ) of left heart decreased , left ventriculus work index ( LVWI ) decreased ] , peripheral resistance increased , blood viscosity increased .
抑制型主要表现为泵功能受抑制[心搏出量(SV)减少,左心有效泵力(VPE)降低,左心搏功指数(LVWI)降低],外周阻力增高,血粘度增高。
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From the I-V characteristic curve the ideal factor ( n ) of 1.4 and the barrier height of more than 0.75 eV are obtained . The carrier concentration profiles of N-type Inp VPE layers were measured by using the mercury probe C-V method combined with the anodic oxidation etching .
从I-V特性曲线计算出二极管的理想因子n值为1.4,势垒高空>0.75eV.用汞探针和阳极氧化逐层剥离的方法测得了N型InP气相外延载流子浓度的纵向分布。