LDMOS
- 网络横向扩散金属氧化物半导体;横向扩散金属氧化硅;功率晶体管;晶体管;横向扩散MOS
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Analysis and Design of Field Plates of High Voltage LDMOS
高压LDMOS场极板的分析与设计
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An analysis of threshold voltage temperature coefficient for high voltage power LDMOS
高压功率LDMOS阈值电压温度系数的分析
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Design of a High Voltage LDMOS Device with 3 Electrodes Free
三端自由高压LDMOS器件设计
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Analyzing characteristics and parameters of LDMOS device with computer aided
计算机辅助LDMOS器件性能参数分析
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Analysis of LDMOS breakdown voltage after using field plate
加场极板LDMOS的击穿电压的分析
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A High Voltage Level Shifter Circuit Implemented in Single LDMOS and Its Application
单路LDMOS实现的高压电平位移电路及其应用
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Analytical Models of LDMOS Based on Numerical Simulation
基于数值模拟的LDMOS解析模型
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The structure of the LDMOS and its design method are described based on an actual chip .
基于一款荧光灯交流电子镇流器驱动芯片的高低压集成电路功能及其器件耐压要求,介绍了该LDMOS器件的结构和设计方法。
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A Study on 0.18 μ m RF SOI LDMOS Power Device
0.18μm射频SOILDMOS功率器件的研究
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Failure Mechanism and Protection of LDMOS Device Under ESD Stress
LDMOS器件静电放电失效原理及防护方法
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The analysis in linear region of n-well LDMOS voltage - current characteristic
n阱LDMOS伏安特性线性区的分析
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Analysis of High Voltage LDMOS Power Dissipation
高压LDMOS功耗的分析
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Design of a LDMOS Microwave Power Amplifier for Radar
用于雷达的LDMOS微波功率放大器设计
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Analysis of Local Electro-Thermal Effects of LDMOS Power Devices
LDMOS的局部电热效应分析
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Research on the 500 V Bulk - Silicon N - LDMOS
500V体硅N-LDMOS器件研究
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Building model and Extracting parameters of a 700V extension LDMOS Device
700V外延LDMOS模型的建立与参数提取
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A 700 V single crystal diffused LDMOS device is investigated .
文章对耐压700V的单晶扩散型LDMOS进行了研究。
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A Monolithic Smart Power IC Based on SOI CMOS / LDMOS Technology
一种SOICMOS/LDMOS单片智能功率集成电路
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Breakdown Characteristics of SOI LDMOS High Voltage Devices with Variable Low k Dielectric Layer
可变低k介质层SOILDMOS高压器件的耐压特性
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Characteristic of on-state resistance of a high voltage LDMOS at very high temperatures
高温、高压LDMOS导通电阻的特性
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Transient Thermal Effects of LDMOS in Switching Operation
LDMOS在正常开关工作下的瞬态热效应
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A Lower Power Consumption , Self Returning Voltage Level Shifter Circuit Implemented with LDMOS
LDMOS低功耗自恢复电平移位电路设计
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Design and Simulation of RF SOI LDMOS Power Amplifier
射频SOILDMOS功率放大器设计与仿真
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A novel buried n layer partial SOI RF power LDMOS is proposed .
提出了具有n埋层PSOI(部分SOI)结构的射频功率LDMOS器件。
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The Analyses on The Characteristic of Single Crystal Diffused LDMOS
单晶扩散型LDMOS特性分析
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Characterization and Modeling of a 700 V Single Crystal Diffused LDMOS Device
700V单晶扩散型LDMOS的特性与模型
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The Design and Fabrication of Power LDMOS
LDMOS功率场效应晶体管的设计与研制
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Design and Implementation of a High-Voltage LDMOS Operational Amplifier
一种LDMOS高压运算放大器的设计与实现
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An Analytical Model of a LDMOS On-Resistance Using a Well as a High Resistance Drift Region
用阱作高阻漂移区的LDMOS导通电阻的解析模型
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LDMOS Linear Microwave Power Amplifier Design
LDMOS线性微波功率放大器设计