磁敏元件

某型Hall磁敏元件的可靠性分析

Reliability Analysis for a Type of Hall Magnet Sensing Units

本文论述了薄膜磁敏元件对基片的要求，依此要求选择硅和高密度铁氧体为基片，上面制备SiO2作绝缘膜。

Requirement of Substrate in thin film magneto sensor is reported . In accordance with the requirement , We select silicon and ferrite of high density as substrate . SiO2 is made insulation film on the substrate .

薄膜磁敏元件基片的选择与制备

Selection and Fabrication of Substrate for Thin Film Magneto sensors

用磁敏元件车载测量传动轴扭矩的研究

Study on Measuring Shaft Torque by Magneto Sensitive Elements

介绍了一种以磁阻传感器为磁敏元件，以单片机为控制核心的高精度转速测量方法。

A method of rotation rate measuring accurately based on Magnetoresistive sensor is introduced in this paper , Single chip processor is the core in the system .

其中有分立型磁敏元件，磁敏无接触电位器、旋转传感器、精密小角度角位移传感器、直线位移传感器、压力传感器和图形识别传感器等。

Among which there are discrete magnetic-sensing sensors , noncontact magnetic-sensing potentiometer , rotation sensors , precision small angle displacement sensors , linear displacement sensors , pressure sensors and pattern recognizing sensors etc.

该传感器由机械式压力传递机构和磁性与磁敏元件组成，能以非接触方式将轮胎气压信号传至车体。

The sensor is comprised of the mechanical tire pressure transmitting mechanism , the magnetic and magnetic sensing elements , it can deliver tire pressure signal from the tire to the vehicle body without contact of the magnetic sensing element with the wheel .

应用磁敏Z元件直流无刷电机电子换相电路的研究

Research on Reversing Electric Circuit of Brushless DC Motor Used Magnetic-Sensing Z-Element

磁敏Z元件位移传感器的研究

Research on displacement sensor using magnetic - sensitive Z-element

齿轮传感器是NiFe合金薄膜磁阻元件的一种重要的应用。本文介结采用NiFe合金薄膜的磁敏电阻元件制成的齿轮传感器的原理、结构、特点、技术参数和应用。

The thin film Magneto-resistive Gear Sensors are presented in detail by their working principle , structure , technical feature and application .

InSb薄膜的真空蒸发及磁敏霍尔元件的制作

Preparation of InSb Thin Films by Vacuum Evaporation and Fabrication of Hall Element

对磁敏Z元件的基本伏安特性、磁敏特性进行了实验测试，给出了实验结果，从内在微观结构和导电机理上对磁敏Z元件的特殊性质进行了分析。

Magnetic-sensing Z-element characteristics were researched . The results of experiment were given out . The special nature caused by the internal microscopic structure of the Z-element and the microscopic electric conduction mechanism was analysed .

制作的磁敏霍尔元件输入与输出电阻范围为200～500Ω，乘积灵敏度达90～150V／A·T。

The input and output resistance for the InSb thin film Hall element fabricated are 200 ~ 500 Ω, and sensitivity is in the range of 90 ~ 150 V / A · T.

本课题进行了以下设计与试验：（1）测定磁感喷油器的磁敏元件和挺杆之间的最佳间隙。

The experiments as follows are done : ( 1 ) Space of magnetism sense organ and needle valve is measured .

钴基非晶丝可呈现巨磁电阻抗效应，利用该效应可制成新型磁敏元件及器件。

This effect can be used to construct new magnetic sensitive elements and devices .