砷化镓材料

连续大功率CO2激光器窗口用的复合型砷化镓材料的研制

Preparation of recombination-type GaAs materials for CW high power CO_2 laser windows

基于砷化镓材料的高功率超快光电导开关研究

Research on High Power Ultra-fast Photoconductive Switch based on GaAs Material

红外数字图象处理技术用于研究砷化镓材料中的缺陷形态分布

Study of morphological distribution of defects in GaAs wafers by infrared digital image processing

掺铬半绝缘砷化镓材料的硅离子注入

Silicon implantation in semi - insulating GaAs substrate

半绝缘砷化镓材料的铍离子注入

Beryllium Ion Implantation in Semi-insulating GaAs Substrates

与砷化镓材料相依发展的微波半导体器件

Microwave Devices Depending on GaAs Material

单晶砷化镓材料是继锗、单晶硅之后发展起来的新一代半导体材料。

Single crystal gallium arsenide is a new semiconductor material has developed after germanium and silicon .

这说明了在表征砷化镓材料抗辐照能力方面，低频噪声参量比传统电学参数更加的灵敏。

It could imply that low-frequency noise parameters are more sensitive than the electrical parameters on the characterization of Gallium arsenic anti-radiation characteristics .

文中在回顾了微波半导体器件发展历史的同时，指出砷化镓材料所起的重要作用。

Looking back on history of its development , author points out that GaAs material plays an major role in the microwave device .

本文采用传统的电学参数测量技术和低频噪声技术，对砷化镓材料的低剂量伽玛辐照效应进行了研究。

In this thesis , a research into the radiation effect of Gallium arsenic in low dose gamma irradiation by traditional electrical parameters and low-frequency noise parameters measurement technology is performed .

分别建立了砷化镓材料辐照损伤的电学模型和噪声表征模型，提取了相应的表征参量，分析了其表征机制。

Both the electrical model and noise characterization model of the irradiation damage of Gallium arsenic are proposed . The corresponding parameters for characterization are measured and the characterizing mechanisms are analyzed .

低频噪声在表征硅器件的辐照损伤时取得了极大的成功，而且它的技术特点也符合对砷化镓材料辐照损伤进行表征的技术要求。

The technical property of low-frequency noise measurement , which has proved to be a powerful tool in characterize the damage of silicon component due to irradiation , could fully meet the requirements in characterizing the irradiation damage of the Gallium arsenic material .

本文介绍了三电极保护法半绝缘砷化镓材料电阻率二维分布自动测量系统，在实际应用中，温度波动、异常数据对测量结果产生严重影响，为此我们提出了一些措施。

An automatic system for the measurement of two-dimensional distribution of resistivity of semi-insulating gallium arsenide wafer with three electrode guard method is presented in this paper . In actual application , the fluctuation of temperature and abnormal data obtained would influence the results of the measurement seriously .

砷化镓基半导体材料抗辐照噪声表征参量研究

Research on Noise Parameter Using for Characteristic Radiation Hardness of GaAs-based Semiconductor Material