静电泄漏
- 网络electrostatic discharge;ESD
静电泄漏-
CMOS集成电路静电泄漏实验分析
Analysis for Electrostatic Discharge Experiment of CMOS IC
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材料的静电电荷衰减速度反映了其静电泄漏性能，所以可以用电荷衰减时间来评价材料的防静电性能。
The electrostatic charge attenuation velocity of material reflects its leaking performance , electrostatic charge attenuation time is used to evaluate anti-electrostatic performance of material .