键合技术

随着引线键合技术向着细密化、高精度的方向发展，视觉系统已经成为影响IC封装精度的重要因素之一。

With the requirements of high accuracy and high speed in wire bonding , machine vision positioning system has become one of important factors which influence the quality of IC packaging .

在回顾现有的引线键合技术之后，文章主要探讨了集成电路封装中引线键合技术的发展趋势。

After reviewing current wire bonding technology , wire bonding technology development trends are discussed .

Si面键合技术及其应用

Progress and Application of Silicon Wafer Bonding Technology

随着SAW器件向小型化、轻型化的发展，传统的引线键合技术已对其形成严重制约。

As SAW filters becoming smaller and lighter , the general wire bond has imposed restrictions on its development .

Cu/Sn等温凝固键合技术在MEMS圆片级气密封装中的应用

Cu / Sn Isothermal Solidification Technology for Wafer-level Hermetic Packaging of MEMS

基于共晶的MEMS芯片键合技术及其应用

Eutectic Die Bonding Technology and Its Applications in MEMS Packaging

用于MEMS器件的单面溅金硅共晶键合技术

Au - Si Eutectic Bonding Technology for MEMS Device

用于MEMS器件芯片级封装的金-硅键合技术研究

Investigation on Au-Si wafer bonding for MEMS device packaging

厚膜Au导体的超声键合技术研究

Research on Ultrasonic Bonding to Thick Film An Conductor

MEMS封装中阳极键合技术的影响因素研究和设计因素分析

Influence Factors Research and Design Factors Analysis on Anode linkage Technology in MEMS Packaging

GaN材料键合技术研究进展

Research Advances in Wafer Bonding Technique of GaN Material

激光在MEMS键合技术中的应用

Laser Applications in Bonding of MEMS

SOI材料的场助键合技术

The Technology of Field-Assisted Bonding fot SOI Materials

采用电子束蒸发和键合技术，制作了具有高反射率的、表面为薄层单晶Si的分布Bragg反射器。

Si distributed Bragg reflector with crystal Si thin film on the reflector was fabricated by electron beam evaporation and bonding techniques .

InP材料直接键合技术

Characteristics of Direct Wafer Bonded InP Materials

利用MEMS（微机电系统）标准光刻、湿法腐蚀以及低温键合技术制作了微流控分析芯片。

The microfluidic chips were fabricated with standard photolithography , wet etching and low-temperature bonding techniques of MEMS ( Micro-electro-mechanical system ) .

AlN薄膜室温直接键合技术

Room - Temperature AlN Direct Bonding

LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。

LED wafer bonding , the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate , metal mirror substrate or sapphire substrate , increases the light emitting efficiency .

采用激光剥离技术结合金属熔融键合技术将生长在蓝宝石衬底上的GaN外延层转移到Si衬底上。

GaN thin films grown on sapphire substrates are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off ( LLO ) technique .

利用光学薄膜原理，计算了采用晶片键合技术来提高以GaAs为衬底的立方相GaN的出光效率的理论可行性。

The feasibility of improving the light extraction efficiency of GaN / GaAs optical devices by using wafer bonding technique is calculated by the principles of optical thin films .

对阳极键合技术的机理、键合基片材料的发展以及键合强度的评价方法等方面进行了综述和评价，并对阳极键合技术在MEMS中的发展趋势作出展望。

The mechanism of bonding , material of improvement bonding and the evaluation method of bonding strength are summarized . The development of this technology which used in MEMS is expected .

利用Si基键合技术、台阶型F-P腔结构以及Si良好的热光效应，研制了一种新型全Si基的热光调谐窄带平顶滤波器。

Based on a step-type F-P cavity structure , a novel all Si-based thermo-optical tunable flat-top filter with narrow band is fabricated , using our patent SOR ( silicon-on-reflector ) bonding technology .

低温直接键合技术由于键合温度低，键合质量好，键合材料限制少等优点在绝缘体上硅（SOI）结构、微机电系统（MEMS）器件等领域得到广泛的应用。

Low-temperature wafer direct bonding with its low temperature , good bonding quality and fewer restrictions has been widely used in the fabrication of silicon-on-insulator ( SOI ) and Micro-Electro-Mechanical-Systems ( MEMS ) devices .

介绍了一种新的RF-MEMS开关制作工艺，利用静电键合技术将表面微加工工艺与体硅加工工艺结合在一起完成开关上下电极的组合；

Bulk micromachining processes and surface sacrificial processes were connected by Si / glass bonding for making RF-MEMS switches .

报道了利用Si基键合技术和化学机械抛光工艺制作的垂直结构的Fabry-Perot可调谐滤波器，调谐机理为pn结正向注入电流引起的热光效应。

A Si Fabry-Perot tunable filter by the technique of bonding and lapping and its design and fabrication are reported , where tuning is realized by thermal-optical effect from the heat of the forward carrier injection .

并且对两种主流SOI器件应变结构（SGOI和SSDOI）的主要制备工艺进行学习，主要介绍了SIMOX方法、键合技术和Ge浓缩技术。

Two mainstreams SOI devices strain structures ( SGOI SSDOI ) are studied focusing on SIMOX , bonding technology and " the Ge enrichment " technology .

本文论述了SOI材料的制备方法-特别是硅片直接键合技术（SDB），简单介绍了SOI压力传感器的优势、制作工艺以及SOI压力传感器的发展现状。

In this paper , we discuss the preparation methods of SOI materials-especially in silicon direct bonding method . and simply reports the predominance , the fabrication processes and development status of SOI pressure sensor .

论述了微电子机械制造中的主要技术，包括表面微细加工、体微细加工、光刻-电铸-注塑（LIGA）、硅直接键合技术等，并讨论了这些新技术在MEMS产品中的应用前景。

Some new technologies of micro-mechanism manufacture are discussed , such as microfabrication technology for surface / bulk , LIGA and silicon direct bonding technologies and so on . Besides , the application foreground in MEMS products using these new technologies is also expounded .

本文综述了固相微萃取（SPME）技术研究进展，主要包括SPME发展现状及技术特点，讨论了SPME在萃取纤维涂层，材料，键合技术，复合/交联键合相等方面的改进；

The paper briefly reviewed research progress of SPME technology , it mainly covered current development status and its technical features , progress in extraction fiber coating , fiber material , coating and bonding techniques , as well as combined / crosslink fiber coatings .

硅片直接键合技术在双极功率器件中的应用

On the Application of SDB Technique to Bipolar Power Devices