等离子体化学

  • 网络Plasma;plasma chemistry
等离子体化学等离子体化学
  1. 由于传统的DBD在气体电离方法方面存在许多问题,致使大气压条件下放电空间内气体的电离度很低,无法满足非平衡等离子体化学工程的需要。

    There are many unsolved problems in conventional DBD gas ionization technique , resulting in lower gas ionizability , which cannot be used in non-equilibrium plasma chemistry .

  2. 第9届国际等离子体化学会议(ISPC-9)

    The 9th International Symposium on plasma chemistry ( ispc-9 )

  3. 等离子体化学气相沉积TiN膜的刀具试验

    Test of cuts with tin film by plasma chemical evaporating deposition

  4. 直流等离子体化学气相沉积TiN在塞规上的应用

    The Application of DC Plasma CVD of TiN to the Plug Gauge

  5. 铝型材挤压模具等离子体化学气相沉积TiN工艺的试验研究

    The Experimental Study on PCVD TIN Process for Aluminium Profile Extrusion Dies

  6. 等离子体化学气相沉积TiN涂层刀具的应用研究

    Application of Cutting Tools Deposited with TiN Film by Plasma Enhanced Chemical Vapour Deposition

  7. 定向TiN薄膜的等离子体化学气相沉积

    Plasma chemical vapour deposition of oriented tin film

  8. 等离子体化学气相沉积参量对Ar等离子体电子特性的影响

    Effect of plasma chemical vapor deposition parameters on electron property in Ar plasma

  9. 等离子体化学气相淀积法生长Y2O3薄膜

    Plasma CVD growth of y_2o_3 , thin film

  10. 等离子体化学气相沉积非晶SiOx∶H(0≤x≤2.0)薄膜的红外光谱

    Plasma-Enhanced Vapor Deposition Amorphous SiO_x ∶ H ( 0 ≤ x ≤ 2.0 ) Films by Infrared Absorption Spectroscopy

  11. 本文研究了七种芳香族碳氢化合物的气相IR激光化学,主要是等离子体化学.实验说明。

    IR laser chemistry ( mainly plasma chemistry ) of gaseous aromatic hydrocarbons was studied with a pulsed TEA-CO_2 laser .

  12. 热丝辅助等离子体化学气相法生长c-BN薄膜

    The effect of growth conditions on quality of c-BN films THESISED by hot - filament assisted RF plasma CVD method

  13. 等离子体化学气相淀积TiO2薄膜材料

    TiO_2 Thin Film Materials by MO-P-CVD

  14. 低温等离子体化学法制备SnO2超微粒子粉末

    Preparation of sno_2 ultrafines by chemical method of low-temperature plasma

  15. 微波等离子体化学气相淀积ZrO2薄膜的表面形貌研究

    Research on Surface Morphology of ZrO_2 Thin Films Deposited by Microwave Plasma Assisted CVD Process

  16. 本文报道了用微波等离子体化学气相淀积(MP&CVD)技术从SiH4+H(?)进行a-Si∶H薄膜的高速淀积研究。

    A microwave plasma chemical vapor deposition method was used to deposit a-Si : H films at high rate .

  17. 等离子体化学气相沉积是一种低温制备TiO2薄膜的有效方法,但通常需要昂贵的真空系统。

    Plasma chemical vapor deposition is highly efficient for low-temperature fabrication . However , it is used at low pressure which needs vacuum systems .

  18. 研究了直流等离子体化学汽相沉积(CVD)法合成的金刚石膜内应力随甲烷浓度、沉积温度的变化关系。

    The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature .

  19. 用射频等离子体化学汽相沉积法,在硼玻璃基片上淀积了厚为1.8μm的aC∶H光吸收层,实验证明这种光吸收层的吸收系数受工艺条件的影响。

    The light absorption layer with 1.8 μ m thick hydrogenated amorphous carbon ( a-C ∶ H ) film is deposited on boride-glass by RF-plasma enhanced chemical vapor deposition ( RF-PECVD ) technique .

  20. 用射频等离子体化学气相沉积法(RF-PECVD)制备了含氢类金刚石薄膜(DLC)。

    Diamond-like carbon films were prepared by RF-PECVD .

  21. 本文给出了用激光多普勒测速仪(LDA)测量涡旋式电弧等离子体化学反应器流场的实验研究结果。

    The results of experimental investigation on the flow field in the vortex arc-plasma reactor by LDA are presented .

  22. 纳米6H-SiC薄膜的等离子体化学气相沉积及其紫外发光

    Plasma Enhanced Chemical Vapor Deposition and Ultraviolet Luminescence of Nanocrystalline 6H-SiC Thin Films

  23. 探讨了用微波等离子体化学气相沉积法(MPCVD)在Si(100)衬底上加偏压电场和不加偏压电场情况下金刚石膜的成核行为。

    The nucleation behaviour of diamond films on Si ( 100 ) substrates is investigated with and without bias field by MPCVD .

  24. 以SiH4,Ar和H2为反应气体,采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜。

    Low-temperature polycrystalline Si films were fabricated by radio frequency plasma-enhanced chemical vapor deposition using SiH_4 , Ar and H_2 as source gas .

  25. 这篇综述介绍了用等离子体化学气相沉积DLC膜的沉积方法、所制备薄膜的性能及应用,最后展望了DLC膜的发展趋势。

    This review will describe the deposition methods , properties and some applications of DLC films by Plasma Enhanced Chemical Vapor Deposition .

  26. 本文采用低Co硬质合金作为金刚石薄膜的基体材料,用微波等离子体化学气相沉积法(MPCVD)沉积金刚石薄膜。

    In the present work , diamond films were deposited on Co-deficient Cemented Tungsten Carbide by microwave plasma chemical vapor deposition ( MPCVD ) .

  27. 利用石英钟罩式微波等离子体化学气相沉积(MW-PCVD)实验装置研究了不同沉积气压对金刚石薄膜沉积结果的影响。

    The diamond films were deposited in a quartz bell jar type microwave plasma chemical vapour deposition ( MW & PCVD ) research device .

  28. 在脉冲电晕放电条件下,用等离子体化学反应方法研究了原位H2O2的合成,考察了一些主要的参数对HO2产量的影响。

    The in situ synthesis of H_2O_2 has been studied by using plasma chemical reaction under pulsed corona dis - charge , and the effects of some main parameters on H_2O_2 yield were also studied .

  29. 其中一个很重要的应用领域便是微波等离子体化学气相沉积(MPCVD)。

    A very important application areas is microwave plasma chemical vapor deposition ( MPCVD ) .

  30. 本论文探讨了利用射频等离子体化学气相沉积(RF-PECVD)技术在金属表面制备类金刚石(Diamond-likeCarbon,简称DLC)膜制备。

    In this thesis , Diamond-like Carbon ( DLC ) films on metal surface were deposited by radio frequency plasma-enhanced chemical vapor deposition ( RF-PECVD ) .