碳化硅

碳化硅炉工控机控制系统外围电路的设计

On Periphery Circuit Design for Industry Control Computer System of Carborundum Furnace

远红外碳化硅辐射加热系统的温度控制

The Temperature Control of Distant Infrared Carborundum Radiation Heating System

碳化硅粉体对熔融渗硅法制备Cf/SiC复合材料结构的影响

Effect of Silicon Carbide Powder on Preparation of C_f / SiC Composites by Molten Silicon Infiltration

以单质Si、C原料制备反应烧结碳化硅的研究

Study on the Preparation of Reaction Bonded Silicon Carbide With Silicon and Carbon

微波诱导甲烷在活性炭/碳化硅上直接转化制C2烃

High power pulsed microwave induced direct conversion of methane to C 2 hydrocarbons over c / sic

碳化硅多型体连生现象的X射线研究

X-ray studies on syntaxic coalescence phenomenon of polytypes in SiC

TEACO2激光制备碳化硅超细粉末

TEA CO2 laser synthesis of SiC ultrafine powders

含碳化硅的耐火材料制品中SiC含量的测定

Determination of SiC Content in Refractory Product Containing Silicon Carbide

用红外吸收法测定碳化硅试样中SiC含量

Determination of SiC content in SiC sample by use of infrared absorption

国产BP碳化硅晶须及特性

The property of silicon carbide whisker

碳化硅（SiC）基材料的高温氧化和腐蚀

High temperature oxidation and corrosion of SiC-based materials

空间相机用碳化硅（SiC）反射镜的研究

Research of SiC Reflection Mirror for Space Camera

碳化硅CMOS倒相器温度特性

Study of temperature properties of the SiC CMOS inverter

CVD碳化硅纤维及其金属基复合材料进展概况

The development of CVD SiC fibers and its metal matrix composites

RF溅射碳化硅薄膜的结构研究

Structural Research of RF-Sputtered Silicon Carbide

通过X射线衍射方法，测定了碳化硅空间用反射镜坯体的残余应力。

The residual stress of the reaction bonded silicon carbide ( RBSiC ) space-borne mirror was tested by x-ray diffraction .

利用冷压烧结法制备了不同含量的聚四氟乙烯/纳米碳化硅（PTFE/纳米SiC）复合材料。

Polytetrafluorethlene ( PTFE ) composites with various nano-SiC ratios respectively were obtained by compression molding .

研究了大电机定子线棒碳化硅（SiC）防晕层的非线性电学性能及其影响因素。

The non-linear property of large generator stator bar SiC anti-corona coat is studied in this paper .

化学气相沉积（CVD）碳化硅厚膜的实验研究

An Experimental Study of Chemical Vapour Deposition ( CVD ) of Silicon Carbide

所研究的碳化硅纤维具有多晶结构，主要含有结晶态的SiC，石墨态的碳和无定形的SiO2。

The silicon carbide fiber has polycrystalline structure .

YAG引入方式对碳化硅陶瓷烧结特性、力学性能及结构的影响

Effects of adding methods of YAG on sintering behaviour , mechanical properties and microstructure of SiC ceramic

碳化硅MOSFET的高温模型及关键工艺研究

High Temperature Model and the Key Processes of SiC MOSFET

摘要首次研究了硅中碳氢共注样品的发光性能c发现在适当碳含量的碳化硅样品中注入氢可以获得室温蓝光发射，追火温度对荧光有明显的影响。

It is found that room temperature blue light can be obtained from the hydrogen-implanted silicon carbide with proper carbon content . The annealing temperature influences the luminescence obviously .

随着SiC器件广泛而深入的研究，光控碳化硅器件也渐渐地引起人们的研究兴趣。

With the development of the sic device intensive research , there has been a growing interest in SiC light-actived devices .

SEM分析结果表明：碳化硅-堇青石多孔陶瓷中碳化硅颗粒排列较紧密，断面呈网格状结构；

SEM analysis results revealed that the SiC grains in porous SiC-cordierite ceramics distributed more closely and the section surface appeared as reticular structure .

实验结果显示，在缓进磨削中，CBN砂轮的磨削性能确实明显优于碳化硅砂轮。

The experimental results show that CBN wheel is extremely superior to SiC wheel .

本文研究了用溶胶-凝胶法对碳化硅进行涂覆的方法，并用X射线衍射仪分析了溶胶-凝胶法制备的莫来石涂层的相组成。

Formation of mullite on SiC substrate via Sol Gel method is investigated in this paper . The phase of the coating is studied by X ray analysis .

这些MgO与碳化硅颗粒之间存在一定的位向关系，结合强度较高。

There exists a definite orientation relationship between MgO and SiC particle , the strength of combination is comparatively high .

Si3N4／SiC、Si2N2O／SiC和Sialon／SiC均属于氮化硅结合碳化硅系列材料。

Si3N4 / SiC , Si2N2O / SiC and Sialon / SiC are the three embranchments of silicon nitride bonded silicon carbide .

本文在简述各种炉体改进和工艺改进的基础上，详细阐述了多热源工业合成碳化硅新技术的节能降耗提质理论及CO回收技术。

In this paper the theory of energy-saving , consumption-reducing and quality-enhancing in SiC industrial synthesis by multi-heat-source furnace and technology of collecting CO gas are reported in detail .