电子气

结果发现，当rs二维电子气的基态有可能发生不稳。

It is found that , for rs 2-dimensional electron gas can be unstable .

AlxGa（1-x）N/GaN异质结构中二维电子气的自旋性质

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_ ( 1-x ) N / GaN Heterostructures

根据自由电子气模型，提出了一种用于计算原子激发态能级的X＿a交换参数的理论模型。

Based on the free-election-gas model , a theoretically determined X_a exchange parameter method which is suitable for calculating excited state energies was presented .

n-Hg（0.80）Mg（0.20）Te界面积累层中二维电子气的输运特性研究

Study on transport properties of two-dimensional electron gases in n-hg_ ( 0.80 ) mg_ ( 0.20 ) te interface accumulation layer

在变缓冲层高迁移率晶体管（MMHEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。

Transport properties of two-dimensional electron gas ( 2DEG ) are crucial to metamorphic high-electron-mobility transistors ( MM-HEMT ) .

结果发现，当rs边缘能变负，从而表明在高密度下，二维电子气的基态有可能发生不稳。

It is found that , for rs edge energy becomes negative , indicating that at high enough density the ground state of the 2-dimensional electron gas can be unstable .

HEMT结构材料中二维电子气的输运性质研究

Study on Transport Properties of Two Dimensional Electron Gas in HEMT Structure

Siδ掺杂Al＿xGa＿（1&x）As／GaAs异质结二维电子气的SdH振荡研究

Study of SDH oscillations of 2-D electron gas in Si δ - doped alxga_ ( 1-x ) as / gaas heterojunction

分子束外延选择性掺杂的GaAs/N-AlxGa（1-X）As异质结中的二维电子气

Two-Dimensional Electron Gas in MBE Grown Selectively Doped GaAs / N-AlGaAs Heterostructures

作者的Laser模型基于如下假设：马氏体相变可看作一种以电子气为工质的量子热机。

The author 's " Laser model " for martensitic transformations ( MATs ) is based on the assumption that MATs can be taken as a kind of quantum heat engine using electrons as working substance .

肖特基C-V法研究AlxGa（1-x）N/GaN异质结界面二维电子气

Investigation on Two-Dimensional Electron Gas in Al_xGa_ ( 1-x ) N / GaN Heterostructures by Using Schottky C-V Measurement

利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气，发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。

Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped InGaAs / InAlAs quantum well by using variable temperature Hall measurement .

GaAs/AlGaAs异质结中二维电子气子能带的Landau能级耦合

Resonant subband Landau level coupling for high lying subbands of two dimensional electron gases in gaas / algaas heterojunction

Ⅲ族氮化物HFET中的电流崩塌和二维电子气

Current collapse and two dimensional electron gas in ⅲ - nitride HFET

量子化极限情况下MOS反型层二维电子气定域态电子电导率σ（xx）的低频效应

The low frequency effects of transverse conductivity of electron in localized state of the two dimensional electron gas in MOS inversion layer under the condition of quantized limit

由于LDA是建立在理想的均匀电子气模型基础上，而实际原子和分子体系的电子密度远非均匀的。

Because LDA is based on the ideal uniform electron gas model , electron density of real atoms and molecules in the system is far from uniform .

本文综述了GaAs-Al（？）Ga（1-（））As异质结界面内二维电子气在低温下的量子霍耳效应理论。

This paper reviews the theory of quantized Hall effect of two-dimensional electron gas in GaAs-Al_xGa_ ( 1-x ) As heterojunction at low temperature .

用射频等离子体辅助分子束外延技术（RF-MBE）在c面蓝宝石衬底上外延了高质量的GaN膜以及AlN/GaN超晶格结构极化感应二维电子气材料。

High-quality GaN films and AlN / GaN polarization-induced two-dimensional electron gas ( 2DEG ) materials are grown on ( 0001 ) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy ( RF-MBE ) .

RF-MBE生长AlN/GaN超晶格结构二维电子气材料

Two-Dimensional Electron Gas Materials with AlN / GaN Superlattice Structure Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

在低温和强磁场下，通过磁输运测量研究了不同Al组分调制掺杂AlxGa（1-x）N/GaN异质结二维电子气（2DEG）的磁电阻振荡现象。

Magnetotransport properties of two-dimensional electron gases ( 2DEG ) in Al_xGa_ ( 1-x ) N / GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields .

近年来，表面声波（SAW）通过压电效应与GaAs/AlxGa（1-x）As异质结中二维电子气（2DEG）的相互作用受到越来越多的关注。

The interaction of a surface acoustic wave ( SAW ) with a two-dimensional electron gas ( 2DEG ) in a GaAs / Al_xGa_ ( 1-x ) As heterojunction through piezoelectric effect has recently attracted much attention .

C-V特性曲线随退火温度增大向右移动，从二维电子气耗尽电压绝对值减小反映了肖特基势垒的提高。

On the other hand , the C-V curves moved to the right and the reduction of absolute value of 2D electron gas depletion voltage proved that the Schottky barrier height was elevated when the annealing temperature increased .

利用泊松方程以及异质结能带理论，通过费米能级-二维电子气浓度的线性近似，推导了基于双异质结双平面掺杂的HEMT器件的电荷控制模型。

By using linear E f n s approximation , a new analytical charge control model of the double heterojunction double planar doped high electron mobility transistor ( HEMT ) is deduced based on Poisson 's equation .

文中综述了族氮化物及其二维电子气的输运特性，讨论了从输运特性出发，优化HFET性能的问题。

The transport properties of ⅲ - nitrides and their two-dimensional electron gas are summarized and the prospect of optimization of HFET from this investigation is discussed in this paper .

在三角阱的基础上，采用无规相近似方法（RPA）、介电函数张量理论和线性响应理论来研究二维电子气沟道中等离激元的性质。

On the basis of the triangle trap , the nature of plasmon in the two dimensional electron gas has been studied through the phase approximation method ( RPA ), dielectric function tensor theory and linear response theory .

Hertel把自由电子气作为连续流体处理，不涉及单个电子运动细节，得到金属中的IFE磁化强度，它是圆周运动理论的一半。

Hertel obtained an IFE magnetization by treating the electron gas as a continuous fluid , without details of the movement of individual electrons . The result is half of that of those circular motion theories .

由其制作的AlGaN/GaN异质结场效应晶体管（HFET），即使没有经过掺杂，但由于其强的极化效应，在其异质结的界面处也有非常高密度的二维电子气（2DEG）。

Heterojunction field-effect transistor ( HFET ) produced by AlGaN / GaN , even without doping , has a very high density of two-dimensional electron gas ( 2DEG ) due to its strong polarization effects in the hetero-junction interface .

通过在低温和强磁场下的磁输运测量研究了非故意掺杂Al0.22Ga0.78N/GaN异质结二维电子气（2DEG）的磁电阻振荡现象。

Magnetoresistance oscillations of the two-dimensional electron gas ( 2DEG ) in unintentionally doped Al_ ( 0.22 ) Ga_ ( 0.78 ) N / GaN heterostructures were investigated by means of magnetotransport measurements at low temperatures and high magnetic fields .

用自由电子气模型对自由电子气（费米能为5eV）的冲击压缩雨贡纽曲线、冲击温度进行了数值计算。

The Shock compression curve ( Hugoniot curve ) and shock temperature of a free-electron gas with a Fermi energy of 5 eV was calculated and evaluated numerically by a free-electron gas model .

本文运用Jellium模型讨论了溶质离子替代溶剂离子后在体内和在表面所引起的附加电荷和电子气相互作用能量的差别对富集的贡献。

The paper discusses the contribution of the difference of additional energy between bulk and surface to the segregation based on Jellium model , which is caused by interaction between additional charge and electron density when a solute atom substitutes a solvent atom .