微波器件

应用固体微波器件和DSP处理器设计了脉冲多普勒雷达系统。

A PD radar system was designed with solid-state microwave devices and DSP .

GaAs质子注入及其在微波器件中的应用

Proton Implantation into GaAs and Its Application for microwave Devices

微焦点工业CT在大功率微波器件阴极检测中的应用

Application of microfocus industrial computed tomography to the inspection of high power microwave device cathode

微波器件及IC用SI－GaAs材料现状及展望

Current Situation and Prospect of SI-GaAs Used on IC and Microwave Devices

基于MATLAB平台的微波器件散射参量自动化测量设备的研究与实现

Realizing and Research of an Automatic Setup for Scattering Parameter of Microwave Based on MATLAB Platform

场发射阵列阴极（FEA）在微波器件中的应用

Application of Field Emitter Array Cathodes ( FEA ) in Microwave Devices

另外计算了SOIMOSFET微波器件的散射矩阵。

The numerical algorithm on the SOI MOSFET 's scatter parameters has been carried out .

并结合微波器件的设计特点，设计出基于Web的协同设计系统，包括用户功能设计、冲突消解设计和数据库设计等。

Besides on the basis of the characteristics of microwave component design , A web-based collaborative design system is presented , including user function design , conflict resolution system design and database design .

BST铁电薄膜压控微波器件

Voltage Controlled Microwave Electronic Components Using BST Ferroelectric Thin Films

基于效应数据的微波器件HPM效应分析及建模方法

HPM effect analysis and modeling method for microwave components based on effect data

相对论速调管放大器（RelativisticKlystronAmplifier）是一种高功率、高效率的微波器件。

Relativistic Klystron Amplifier ( RKA ) is one kind of microwave devices with high output microwave power and high efficiency .

着重介绍了新型光学器件、微波器件、光波－微波器件和组件（如光波－微波T／R组件）及其在现代雷达中的应用。

This paper emphatically introduces new type optical devices , microwave devices , lightwave-microwave devices and modules ( lightwave-microwave T / R inedules ), and their applications in the modern radar .

在实际器件中，高速数字信号呈现RF特征，因此在测试系统中路由这些信号时就需要RF或微波器件。

High speed digital signals exhibit RF behavior in real-world devices , which creates a need for RF or microwave components when routing these signals in test systems .

GaN基微波器件以其优良的特性而在微波大功率方面具有应用潜力。

GaN-based microwave devices possess potential in microwave and high power applications , and related researches have been a hotspot in the current compound semiconductor area .

第二章讨论了微波器件的基本设计理论、设计方法，包括S参数的概念，主要传输媒质特性，及利用微波电路CAD软件进行微波器件设计的方法和途径；

In the second chapter , the basic design principles and methods of microwave devices are discussed , including the concept of S parameter , the characteristics of transmission line and the microwave circuit CAD .

磁晶各向异性场引起的YIG单晶微波器件温度不稳定性的最佳补偿

On the optimum compensation of the temperature instabilities caused by the magnetocrystalline anisotropy field in YIG microwave devices

掩膜层生长导致n-GaAs表面化学组分的变化对微波器件性能的影响

Influence on Microwave Device Performance of n-GaAs Surface Chemical Composition Deviation Induced by Mask Layer Growth

采用倒筒式直流溅射结合辐射加热方法对无源微波器件用的Y1Ba2Cu3O7-x（YBCO）双面薄膜生长进行了研究，实验结果表明：直流非磁控溅射可以制备性能良好的薄膜。

The preparation of 25.4 mm ( 1 inch ) in diameter double_sided YBCO thin films for microwave passive devices by inverted cylindrical DC sputtering with radiant heating is reported .

高频结构仿真器（HFSS）是一种微波器件设计软件，该软件界面友好，通过仿真计算减小了调试工作量，使得微波器件的设计变得简单易行。

High-Frequency Structure Simulator ( HFSS ) is used for microwave components design , which has friendly interface and can reduce debugging workload through simulated calculation .

因此基于4H-SiC的功率微波器件&金属半导体场效应晶体管（MESFET）受到了人们的极大关注与重视。

With these excellent figure of merits of SiC , the great attention was paid on 4H-SiC MESFET ( metal semiconductor field effect transistor ) .

Drop-in微带环行器（或落入式）是适应于毫米波集成电路要求的一种新型微波器件。

Drop in microstrip circulator is a kind of new designed structure devices , which is suitable to the necessity of MMIC .

GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点，在高温、大功率、微波器件领域拥有很大发展潜力。

Gallium nitride material has superior physical properties , such as wide bandgap , high saturation electron drift velocity and high thermal conductivity . It has great potential for application in high temperature , high power and microwaves fields .

钛酸锶钡（BaxSr（1-x）TiO3，BST）薄膜具有优良的铁电、介电性能，在可调谐微波器件、动态随机存储器、红外探测器阵列等方面具有良好的应用前景。

Barium strontium titanate ( BST ) thin films possess good ferroelectric and dielectric properties . They are promising materials in application of tunable microwave devices , DRAMs , IR detector arrays and so on .

目前，实现平面微波器件小型化的方法包括：采用具有慢波特性的周期性结构以及低温共烧陶瓷技术（LTCC）等。

Currently , there are some methods to realize the miniaturization of planar microwave devices , such as adopting periodic structures with slow-wave characteristics , low temperature Co-fired Ceramic ( LTCC ) technology and so on .

分析了EMP作用下典型微波器件的瞬态响应，首先给出了微波集中参数电路的场-路混合仿真，包括单端口网络、两端口网络和多端口网络等。

In chapter 4 , we analyze the transient responses of classic microwave devices , then we introduce the field-circuit method of microwave circuit lumped elements , including single port , double ports and several ports network and so on .

铁电钛酸锶钡（BaxSr（1-x））TiO3是一种具有十分优越铁电/介电性能的材料，在可调微波器件及动态随机存储器件方面有很好的应用前景。

Ferroelectric ( Ba_xSr_ ( 1-x )) TiO_3 ( barium strontium titanium oxide . BST ) thin films have excellent fer roelectric / dielectric properties and promising application prospect in tunable microwave devices and dynamic random ac - cess devices .

讨论了微波器件的测量问题，阐明了LRL（Line－Reflect－Line）校准法的物理模型。

The problem of measurements for microwave devices is considered , and a physical model for LRL ( Line-Reflect-Line ) calibration method is described .

提出将GaNHEMT作为微波器件用于混合微波集成电路（MIC）和微波单片集成电路（MMIC），在射频输出功率、器件优值等方面，均具有明显优点，并列举了成功的例子。

The GaN HEMT as a microwave device for hybrid microwave integrated circuit ( MIC ) and microwave monolithic integrated circuit ( MMIC ) benefits from both RF output power and de-vices figure of merit , such as hybrid MIC packaged and high-power broadband MMIC .

随着大功率微波器件的发展，大功率微波电磁脉冲弹（E-bombs）在国外已经实用化。

With the high power microwave devices development , the high power microwave electromagnetic pulse bombs ( E-bombs ) have become practical abroad .

为了采用离子注入的方法做Josephson结，进一步用相应的方法研发出SQUID器件，我们首先对用于制备微波器件的薄膜进行H2+注入，找到了最合适的剂量，为后面的工作奠定基础。

In order to make Josephson junction using the method of ion implantation , and further prepared SQUID devices by the corresponding method , first we implant the film by H2 + in order to find the most appropriate dose to make a basis for the behind work .