岛状结构

AFM和STM观察表明薄膜表面存在着岛状结构，表面粗糙度在纳米尺度范围内。

AFM and STM images showed that there are island structure found on film surfaces and the roughness is limited to nanometer size magnitude .

通过SEM分析得出薄膜表面出现岛状结构，随着基体温度升高或沉积速率降低，岛的平均尺寸变大，数目减小。

The island structure is analyzed by Scanning Electron Microscope ( SEM ), and we observed that with the substrate temperature going higher or deposition rate becoming lower , the average size of the island becomes bigger and the island number decreases .

GaAs（001）表面岛状结构自发形成的动态过程是研究薄膜生长机制微观理论一个重要的研究方向。

The spontaneous island formation process on the GaAs ( 001 ) surface is an important research aspect of film-growth mechanism and microscopic theory .

AFM的测试结果表明：沉积膜是一种垂直于基底表面的圆锥形岛状结构，每个岛又由许多纳米粒子组成，是一种较为复杂的团簇状二次结构。

AFM shows that the surface of the films is undulate . Particles grow vertically to the film surface , and then form a taper-like structure . They are complicated islands-like structure .

扫描隧道显微镜与原子力显微镜观察表明薄膜表面存在着岛状结构；

AFM and STM images showed that island structure were found on film surfaces ;

玻璃体中的硅铝骨架并不是处于网状结构中，而是处于双四面体岛状结构中；

The silica - alumina framework in vitreous body exists not in reticular structure but in double tetrahedron island structure .

溅射金属在铜基体表面首先形成稳定的晶核，然后长大成岛状结构、网状结构后形成连续的渗层；

Sputtering atoms first form stable crystal nucleus , and then develop in turn to island structure , network structure and continue layer .

溅射时间和溅射功率在一定范围内的增加改善了薄膜的结晶性能，薄膜表面的岛状结构增大。

With the increasement of sputtering time and power in a certain range , the crystallization of the films were improved and the size of single island became larger .

薄膜自由表面结构越均匀越致密，薄膜的力学性能越好。河床状结构、帽状聚合体结构和三维岛状结构的薄膜具有优异的力学性能（拉伸强度和韧性）。

As shown in SEM micrographs and with the mechanical characteristics , the river patterns and cap-shaped aggregation structure formed by capillarity or island microstructure formed by three-dimensional nucleation mean excellent mechanical properties ( tensile strength and toughness ) .

实验结果表明，当Al层很薄时，膜的连续性较差，呈岛状或网状结构，膜的导电性不好；

The experimental results show , if the Al film is too thin it will misses continuity , the film is in the island shape or the network structure , so the film electrical conductivity is bad .