sint

Preliminary Analysis on the Chemical Composition of Nigella Glandulifera Freyn et Sint (ⅰ)

维药瘤果黑种草子的化学成分初步分析（Ⅰ）

A hypothetical SiNT Si-H self-assembled growth model is proposed to explain the formation and growth process of the SiNTs and the stability of the SiNTs is closely relative to the growth process .

采用硅纳米管Si-H自组生长模型解释了硅纳米管的形成与生长，研究表明硅纳米管的稳定性与其生长过程密切相关。

Determination of Kaempferol in Seed of Nigella Glandulifera by HPLC Chemical constituents of the extracts from Nigella glandulifera Freyn et Sint by supercritical carbon dioxide fluid extraction

HPLC测定瘤果黑种草籽中山奈酚含量瘤果黑种草子超临界CO2流体萃取物的GC-MS分析

One-dimensional silicon-based nanoscale materials have the potential to become the important basic material in silicon nanoscale devices owing to the excellent compatibility with the present silicon technology . Silicon nanotube ( SiNT ) is a kind of important silicon-based nanoscale materials and has attracted great interest .

由于与现有硅技术有良好的兼容性，一维硅基纳米材料有潜力成为硅纳米器件的基材，硅纳米管作为重要的硅基纳米材料之一，引起了人们极大的研究兴趣。

The maximum value of stress SINT ( SINT is the equivalent stress of the third strength theory ) under normal working status ( F_w + P_c ) will increase along with the decrease of wall thickness of rotary drum , but the amplitude of increase is comparatively small .

正常工况（FW+PC）下的应力SINT（SINT为第三强度理论的等效应力）最大值随着转鼓壁厚的减小而增大，但增大的幅度较小；