semiconductor silicon

美 [ˈsemikəndʌktər ˈsɪlɪkən]英 [ˌsemikənˈdʌktə(r) ˈsɪlɪkən]
  • 网络半导体硅;半导体硅材料
semiconductor siliconsemiconductor silicon
  1. Application of Chemistry in Semiconductor Silicon Material Manufacturing and Its Prospects

    化学在半导体硅材料制造业的作用与展望

  2. On Several Economical Problems About Semiconductor Silicon Production

    关于半导体硅材料工业的几个经济问题

  3. New Trend of Semiconductor Silicon Industry

    世界半导体硅工业新动向

  4. The activation analysis method for the determination of elemental impurities in semiconductor silicon materials

    GB/T4298-1984半导体硅材料中杂质元素的活化分析方法

  5. Occupational Hazard in Semiconductor Silicon Manufacturing and Its Protective Countermeasure

    半导体硅材料制造业的职业危害及防护对策

  6. Laser Induced Selective Electroplating of Copper on Semiconductor Silicon

    半导体硅上激光诱导选择性电镀铜

  7. As an information carrier , semiconductor silicon plays an important role in the information revolution in modern life .

    硅作为信息载体在当今世界的信息革命中起着重要作用。

  8. Research on micro - EDM for semiconductor silicon

    半导体硅材料的电火花加工技术研究

  9. Optical Reflection Magic mirror Detecting Technique for Detecting Surface Defects of Semiconductor Silicon Wafers

    半导体硅片表面缺陷光反射魔镜检测技术

  10. The processing technology includes super-precision machine processing technology , semiconductor silicon processing method and LIGA technology .

    加工技术包括特种超精密机械加工技术、半导体硅加工方法和LIGA技术。

  11. Information society is on the base of microelectronic industry that is built on the semiconductor silicon material .

    微电子是信息社会的基础,而半导体硅材料则是微电子的支柱。

  12. This paper analyses the micro EDM feasibility for semiconductor silicon from the physical properties of silicon .

    从硅材料的物理性能出发,分析其微细电火花加工的可行性。

  13. The Amorphous Semiconductor Silicon p - n Junction

    非晶态半导体硅p-n结

  14. Preparation and Properties of Silica Sol Polishing Reagent for Semiconductor Silicon Wafers

    硅片抛光剂SiO2溶胶的制备和性能研究

  15. Electroless copper plating on semiconductor silicon

    半导体硅表面化学镀铜

  16. The current situation and development trend of semiconductor silicon materials industry of the world are summarized in terms of market , technology and industrialization .

    从市场、技术和产业化的角度论述了世界半导体硅材料的发展现状和趋势。

  17. Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage

    GB/T6616-1995半导体硅片电阻率及硅薄膜薄层电阻测定非接触涡流法

  18. Electrochemical characteristics of semiconductor silicon wafers were investigated in dilute hydrofluoric acid solutions using DC polarization and AC impedance techniques under both illuminated and dark conditions .

    采用电化学直流极化和交流阻抗技术,在有光照和黑暗条件下分别研究了半导体硅片在稀释氢氟酸溶液中的电化学特性。

  19. We fabricated a new type of submicro edging junction which use semiconductor silicon as isolating layer between base-electrode and upper-electrode .

    我们研制成功一种新型亚微米边缘结,这种边缘型超导隧道结以半导体材料硅作为上、下电极间的隔离层。

  20. In the pest thirty years , China semiconductor silicon material industry has produced some thousand of tons of silicon crystals , made great contribution to the development of the national electronic industry .

    我国的半导体硅材料工业已经走过30多年的历程,给国家提供了上千吨的硅单晶材料,为发展我国电子工业做出了重大贡献。

  21. Silicon epitaxial material has provided solid and reliable material base for semiconductor silicon devices , especially all kinds of silicon integrated circuits , and supported the sustainable development of contemporary microelectronic industry .

    硅外延材料为半导体硅器件特别是各类硅集成电路的发展提供了坚实、可靠的物质基础,支撑着当代微电子产业的持续发展。

  22. The measurement of pressure was carried out by using semiconductor silicon piezometer . With the static pressure in inlet of pipeline and theoretic analysis we could get the total pressure of MPT .

    压强的测量采用半导体硅压阻式压强传感器,通过测量MPT进气管路的静压,结合理论分析计算得到MPT谐振腔的总压。

  23. These major changes are based on the technological breakthrough of semiconductor silicon materials . Only semiconductor silicon material is made of single silicon crystal can it be used in the Integrated Circuit ( IC ) .

    而这些重大变革都是以半导体硅材料的技术突破为基础的,半导体硅材料大都应该制备成硅单晶方可作为IC器件使用。

  24. Using a Q - switched YAG laser with three frequencies , the chemical deposition of a Ni-Pd - P nano - film on the semiconductor silicon substract is obtained at ambient temperature .

    使用脉冲三波长Nd:YAG激光实现了室温下半导体硅上化学沉积Ni-Pd-P纳米膜。

  25. Semiconductor silicon is the most important function material in microelectronic industry evolution . Following extension of application area , it has a higher requirement about its properties , such as light , heat , electricity , mechanics and so on .

    半导体硅在微电子技术领域是最重要的功能材料,随着应用范围的扩大,对其光、热、电、机械等性能的要求越来越高。

  26. Basing on the Fermi statistical distribution of electron and hole in semiconductor silicon , the dependence of the transmittance of silicon under CO2 laser irradiation on temperature has been calculated , furthermore theoretical results were proved by experimental data .

    本文基于半导体材料硅(Si)中电子、空穴的费米统计分布,计算了Si对CO2激光的透射率随温度的变化,并用实验理论作了验证。

  27. This article reviews the markets , productions and developments of science and technology for semiconductor silicon and ⅲ - ⅴ semiconductor compound GaAs single crystal materials in the 1980 's at home and abroad . Some considerations of semiconductor materials development trend in the 1990 's are presented .

    本文对80年代国内外半导体Si单晶和Ⅲ&Ⅴ族化合物GaAs单晶材料的市场,生产及科技进展进行了综述,对90年代半导体材料的发展提出了一些看法。

  28. Semiconductor material silicon has played the center role in semiconductor industry since the invention of transistor .

    自晶体管诞生至今的半个世纪中,硅材料始终是电子和微电子工业的主流材料。

  29. This paper analyzed the property of atom of boron and phosphorus vibrating in three dimesions near the edge dislocation in semiconductor of silicon or germanium with model of six-atoms .

    本文用六原子模型.分析丁硼、磷原子在硅、锗半导体中刃位错附近的三维振动特性。

  30. He had followed a postgraduate degree at the University of California , Berkeley with a job as a research scientist at Fairchild Semiconductor , Silicon Valley 's original chipmaker .

    在加州大学伯克利分校(UniversityofCalifornia,Berkeley)获得硕士学位后,他曾在硅谷最早的芯片制造商飞兆半导体(FairchildSemiconductor)担任研究员。