rtn

Research on structural design & manufacture of elastomer RTN load cell

浅谈RTN称重传感器弹性体的结构设计与制造

The RTN processing has been studied and the processing key setting the temperature has been obtained .

研究表明，设定温度是工艺的关键。

As the RTN time increases , I E curves move up all .

研究表明，IE曲线随氮化时间增加而上移。

The Progress in the Study of RTN Gene Family Encoding Membrane Protein of Endoplasmic Reticulum

编码内质网膜蛋白的新基因家族RTN的研究进展

Firstly , Steps and algorithms for the RTN and TRN methods are studied .

首先是矩形网格、规则三角形网格两种方法，研究了生成地形模型的各个步骤和相关算法。

The expression of RTN in HCC were observed by immunohistochemical staining , eukaryotic transfection tumorigenicity .

利用免疫组化、真核转染、体内外抑瘤试验等方法。

The rooting rates reached 79.2 % and 70.8 % , respectively when the cuttings were treated with 0.02 % of RTN rooting promoter and NAA for 1.5 hours .

选取质量分数为0.02%的RTN生根促进剂和奈乙酸对带顶芽和无顶芽插穗处理1.5h，平均生根率分别高达79.2%和70.8%。

It is revealed that nanometre film formed by PECVD and the film fabricated by RTN process have different changes in interface trap characteristics , as the nitrogen and oxygen contents are different . The physical explanation is supplied .

揭示出PECVD法形成的这种纳米膜与快速热氮化制备的薄膜中、氮氧含量不同、界面陷阱特性变化不一样，并从薄膜氮化机制予以物理解析。

The mechanisms and optimal parameters of rapid thermal annealing of high dose implanted silicon , fabrication of shallow PN junctions , formation of silicide , reflow of BPSG and RTN of ultrathin oxide films have been discussed from a comprehensive point of view .

包括：RHT设备，高剂量注入硅的RTA机理与最佳RTA条件选择，以及浅PN结制造，硅化物形成，BPSG回流和薄氧化层的快速氮化等RTP技术。