isolated gate

Study of Static Characteristics and Leakage Current in High Field Region of Heterostructure Isolated Gate Field Effect Transistor

异质结绝缘栅场效应晶体管（HIGFETs）高场区静态特性模型和栅泄漏电流研究

The discharging system is composed of discharging resistance and IGBT ( Isolated Gate Bipolar Transistor ) module which controls the current of discharging by adjusting the duty of control signals .

放电系统由放电电阻和放电控制IGBT（IsolatedGateBipolarTransistor）模块组成，利用IGBT开关控制信号的占空比调节实现放电电流的控制。

The computer control introduced utilized the expert control stratagem , and adopted the isolated gate bipolar transistor ( IGBT ) as its power amplifier . This system satisfied the requirement of the rotating mirror .

这里介绍的计算机控制电机调速系统采用了专家控制型控制策略，使用了驱动简单、热稳定性好的绝缘门双极型晶体管（IGBT）作功率放大元件，满足了转镜高速相机的需求。

In the brushless model , the IGBT ( Isolated Gate Bipolar Transistor ) switch state period table is gained by GAL ( Generic Array Logic ) which analyzes the signal of position feed-back .

在无刷直流方式下，用GAL对位置反馈信号进行逻辑综合，得到开关管的导通规律。