gallium nitride

High performance gallium nitride based blue light emitting diode material epitaxy and dry etching fabrication technology

氮化镓基高亮度发光二极管材料外延和干法刻蚀技术

Development of Gallium Nitride Thin Films

氮化镓薄膜的研究进展

Synthesis and Luminescence of Gallium Nitride LED Blue Light Conversion Materials

氮化镓发光二级管蓝光转换材料的合成和发光性质

Effect of Heat Treatment on the Quality of Gallium Nitride Epilayers by MOCVD

热处理对MOCVD外延生长GaN薄膜性能的影响

The growth rate of gallium nitride is as high as 0 . 5 μ m / h.

GaN生长速率可达0.5μm／h。

As wide band gap material , Gallium nitride is used for a variety of optoelectronic devices .

作为第三代宽禁带材料的氮化镓被广泛的应用于光电子器件中。

Gallium nitride based blue laser diodes

GaN基蓝光半导体激光器的发展

Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation PROGRESS OF GALLIUM NITRIDE THIN FILM

采用金属镓层氮化技术在石英衬底上生长多晶GaN氮化镓薄膜研究进展

Influence of Piezoeffect on Carrier Concentration in Gallium Nitride Epilayer

GaN压电效应对载流子浓度的影响

Gallium nitride has been widely used in optoelectronic and microelectronic devices field because of its large , direct bandgap , high thermal stability , etc.

GaN具有禁带宽、热导率高等特点，广泛应用于光电子和微电子器件领域。

Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition ( MOCVD ) with carbon nanotubes as templates in this paper .

通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。

High quality gallium nitride nanowires were self assembled on quartz through ammoniating nano Ga 2O 3 thin films deposited by rf magnetron sputtering .

通过氨化射频溅射工艺生长的纳米Ga2O3薄膜，在石英衬底上反应自组装生成了高质量的GaN纳米线。

Gallium Nitride ( GaN ) and Silicon carbide ( SiC ) are promising wide bandgap materials for fabricating blue light emitting and extremely using devices .

宽禁带半导体材料GaN和SiC是在蓝色发光和极端器件中很有前途的材料。

Recently , studies on short wavelength gallium nitride laser diodes have been made with breakthrough progress , and close attention is paid on the new branch of optoelectronics research .

GaN短波长激光器是最近取得突破性进展而备受关注的光电子学研究新领域。

Gallium Nitride High Electron Mobility Transistor ( GaN HEMT ) models are basics of the GaN Microwave Monolithic Integrated Circuit ( MMIC ) CAD .

氮化镓高电子迁移率晶体管（GaNHEMT）模型是GaN微波单片集成电路（MMIC）CAD的基础。

Efficient , high-power gallium nitride ( GaN ) - based light emitting diode ( LED ) is currently the focus of research in the field of solid state lighting .

高效、大功率氮化镓（GaN）基发光二极管（LED）是目前固态照明领域的研究焦点。

Along with the technological breakthroughs of gallium nitride and the advent of high power white light-emitting diode ( LED ), LED is starting to be used in lighting and has broad prospects for development .

随着半导体材料氮化镓的技术突破和大功率白光发光二极管（light-emittingDiode，LED）的问世，LED开始进入照明领域，具有广阔的发展前景。

Gallium nitride material has superior physical properties , such as wide bandgap , high saturation electron drift velocity and high thermal conductivity . It has great potential for application in high temperature , high power and microwaves fields .

GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点，在高温、大功率、微波器件领域拥有很大发展潜力。

Hexagonal gallium nitride ( GaN ) microcrystal are successfully synthesized by ammoniating Ga_2O_3 powder and Ga_2O_3 gel respectively under high temperature in the flow of NH_3 gas at 950 ℃ for 20 min.

分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源，采用NH3为N源，在950℃下，分别将两种反应物与流动的NH3反应20min合成了GaN微晶。

Gallium Nitride ( GaN ) based wide direct bandgap semiconductors have become the most important materials for high temperature , high power , high frequency electronic devices as well as for light emitting diodes , laser diodes , ultraviolet photodetectors .

氮化镓（GaN）基宽禁带半导体材料是制备高温、高功率、高频电子器件以及发光管、紫外探测器等光电子器件的重要材料。

With the development of semiconductor materials , the third generation of semiconductors , which are represented by gallium nitride ( GaN ) and other Ill-nitride wide gap materials , have attracted more and more attention , because of their superior advantages .

随着半导体材料的发展，以GaN及其Ⅲ族氮化物为代表的第三代宽禁带半导体由于其优越的特性越来越受到广泛的重视。

Photoluminescence ( PL ) of Gallium nitride ( GaN ) films grown by ammoniating Ga2O3 / Al2O3 films deposited on silicon ( 111 ) by rf magnetron sputtering has been studied . The mechanism and the influence of growth condition on the photoluminescence is also studied .

研究了Ga2O3/Al2O3膜氨化反应自集结制备GaN薄膜的光致发光特性，讨论了发光机制以及生长条件对其光致发光特性的影响。