dmos

Lateral High Voltage DMOS Bulk Electric Field Optimum and New Structures

横向高压DMOS体内场优化与新结构

On the Design and Implementation of DMOS , a Distributed Real-Time Operating System

DMOS分布式实时多任务操作系统的设计与实现

On Basic Parameters and Radiation Theory of Non-uniform Channel DMOS

非均匀沟道DMOS基本参数及其辐照理论的研究

A Threshold Voltage Model of the Short Channel DMOS

短沟DMOS阈值电压模型

Threshold Voltage Model of Non-Uniform Channel DMOS Devices

非均匀沟道DMOS器件阈值电压模型

The transient response model of single ion radiate the non-uniform channel DMOS is proposed .

提出非均匀沟道DMOS单粒子辐照的瞬态响应模型。

Transient Response of Single Ion Radiate the Lateral High-Voltage DMOS

横向高压DMOS单粒子辐照瞬态响应

2D Threshold Voltage Model of DMOS

DMOS阈值电压二维模型

The DMOS software is successfully applied to industrial process optimization of the diesel oil hydrofining unit and the acrylonitrile reactor unit .

将DMOS工业优化软件成功地应用于柴油加氢精制装置及丙烯腈反应装置的生产优化。

By resolving Poisson equation , the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained .

求解泊松方程，由此给出DMOS辐照正空间电荷阈值电压模型表示式。

A 2-D charge threshold voltage model of double-diffusion metal-oxide-semiconductor ( DMOS ) device is proposed in the paper .

提出了DMOS器件的二维电荷阈值电压模型。

The unique features of DMOS such as quasi-saturation , non-uniformly doped channel , and temperature dependencies are accurately modeled .

该物理模型考虑了高压DMOS器件的准饱和特性、沟道非均匀掺杂特性和温度效应。

BCD process is a novel one that combines DMOS and low voltage BiCMOS process together ; its advantages are low power dissipation , high integrity and strong drive .

BCD工艺是将DMOS与低压BiCMOS工艺结合起来的一种新型工艺，具有功耗低、集成度高、驱动能力强等优点。

Secondly , the canonical piecewise-linear modeling was employed to construct the two dimensional mathematic modeling of HV DMOS for the first time based on the physical modeling .

其次，在物理模型的基础上，首次将规范化分段线性模型技术，用于建立高压DMOS器件I-V和C-V特性的数学模型。

BCD process can be produced bipolar , CMOS and DMOS devices on a same chip , and made them learn from each other to play their own characteristics .

BCD工艺是一种可以在同一芯片上集成双极管Bipolar，CMOS和DMOS器件，并让这三种器件相互取长补短，发挥各自的特点的工艺。

The 2D threshold voltage model of DMOS devices is proposed . Depletion width is analyzed and the expression of the 2D threshold voltage model of DMOS devices is given .

提出了DMOS器件的二维阈值电压模型，分析了耗尽层宽度的变化，并得到了模型的数学表达式。

Resolving Poisson equation , the mobility expression of N-type and P-type non-uniform channel MOS and the mathematics expression of the threshold voltage model of DMOS are obtained .

同时求解Poisson方程，分别给出非均匀N沟和P沟DMOS的辐照迁移率表示式和辐照正空间电荷阈值电压表示式。

Based on the 2-D distribution of channel depletion charge , the channel depletion charge is calculated and the mathematical expression of the threshold voltage model of the short channel DMOS is obtained .

基于沟道区耗尽电荷的二维分布，计算沟道区中耗尽电荷总量，由此给出短沟DMOS阈值电压模型的计算式。

It is necessary and urgent to establish the SPICE modeling for PIC CAD . This dissertation presents a methodology for SPICE macro-modeling of high-voltage DMOS devices for PDP scan driver IC design .

本文围绕高压DMOS器件SPICE宏模型的建立，并结合模型在PDP驱动芯片和系统中的应用展开研究。

The transient response characters of DMOS at non-junction , single junction and double junction are obtained by the transient response numerical analysis result of the open and close state of the DMOS at different energy ion radiation .

借助对横向高压DMOS的关态和开态的不同能量粒子辐照瞬态响应的二维数值分析，获得了横向高压DMOS在双结、单结和无结情况下的瞬态响应特性。

The threshold voltage model of micron and deep sub-micron non-uniform channel DMOS , the radiation threshold voltage model , the radiation mobility model and the transient response model of single ion radiation are internationally proposed for the first time .

在国际上首次提出微米级和深亚微米级非均匀沟道DMOS阈值电压模型和辐照阈值电压、迁移率模型及单粒子辐照瞬态响应模型。

This thesis analyzed the theory and characteristics of Bipolar-CMOS-DMOS ( BCD ) process which is especially fit for the design and manufacture of power management IC . The manufacture of Bipolar 、 CMOS and DMOS devices in BCD process was discussed .

本文在分析了一种适合用于电源管理IC设计的双极型-CMOS-DMOS（简称BCD，Bipolar-CMOS-DMOS）工艺的原理和特点基础上，讨论了BCD工艺中双极型、CMOS和DMOS器件的实现方法；

The simplified expression of DMOS threshold voltage is given with the channel surface diffusion concentration changing from 2.0 × 1016cm-3 to 10.0 × 1016cm-3.The radiation mobility shift model and threshold voltage model of the non-uniform channel DMOS are proposed .

还给出了沟道表面扩散浓度在2.0×1016cm-3到10.0×1016cm-3范围内微米级DMOS器件的阈值电压的简明计算式。提出非均匀沟道DMOS辐照迁移率和阈值电压模型。

Simplify expression of DMOS devices threshold voltage model is proposed as the diffusion concentration changing from 2.0 × 10 16 cm - 3 to 10.0 × 10 16 cm - 3 . This model overcomes former inaccuracy of DMOS threshold voltage .

给出了沟道表面扩散浓度在20×1016～100×1016cm-3范围内DMOS器件的阈值电压简明计算式.该模型的提出解决了以往所用的DMOS阈值电压模型计算很不准确的问题。