cz

Strategic Running Diagnosis and Analysis of CZ Software Company in Guangxi

广西CZ软件公司的经营战略诊断与分析

Cz Crystal Temperature Distribution in the Finite Element Analysis

Cz法晶体生长中温度场分布的有限元分析

Mechanism of Interaction between Crystal Growth and Crystal Melting in CZ Method

引上法晶体生长和熔化相互作用的机理

A New Pattern of Recursive Program Transformation & CZ Transformation

递归程序变换的一种新模式一CZ变换

The Study of Surface Morphology of YAG Single Crystal Grown by CZ Method

引上法YAG单晶表面形态学的研究

Research on Streak Formation in Growing Single Crystal with Large Size by CZ Method

直拉法生长大尺寸TeO2单晶生长条纹的探讨

Control of Radiation Defect in CZ Si Radiated by High Energy Particles

高能粒子辐射直拉硅中辐照缺陷的控制

Development and Applications of the Intelligent Weighing Installation of Model CZ Loader

CZ型装载机智能测重装置的开发与应用

Study on Cure Characteristics of DZ / CZ Binary Accelerator System

促进剂DZ／CZ并用体系硫化特性的研究

Appraisal Test of Accelerator CZ Synthesized in New Technology

新工艺合成促进剂CZ的鉴定试验

Oxygen precipitation is an important subject of defect engineering for CZ silicon .

氧沉淀是直拉硅单晶缺陷工程的重要研究课题。

This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method .

介绍了直拉法生长单晶硅的基本原理及工艺条件。

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

CZ硅单晶中旋涡缺陷对低频大功率管制造的影响

The Cz and Bridgman methods are common techniques of crystal growth .

Cz法与Bridgman法是晶体生长中普遍采用的两大技术。

Thermal Environment Analysis and Test of CZ - 2C / SD Rocket

CZ-2C/SD火箭热环境分析及试验

Investigation on the Nature of Flow Pattern Defects in CZ - Si Crystals

CZ-Si单晶中流动图形缺陷的本性探究

Advances in the synthetic technology and application of vulcanization accelerator CZ

硫化促进剂CZ合成工艺和应用

Growth of Yb : YAG Crystal by Cz method and the Study of the Characteristics

提拉法生长Yb：YAG晶体及其性能表征

Rotation Rate in Growing Li_2B_4O_7 Single Crystal by CZ Method

提拉法生长Li2B4O7单晶的转速选择

Study on Growing Rate in Φ 200mm CZ Si Growth

Φ200mm太阳能用直拉硅单晶生长速率研究

Study of Defects Created by Proton Implantation in CZ Silicon

质子注入直拉硅中缺陷的研究

Study on Radial Oxygen Uniformity of Φ 125 mm Cz Si Crystal

Φ125mm直拉硅单晶氧径向均匀性研究

Two Kinds of Nucleation Mechanisms for Oxygen Precipitation in CZ Silicon with High Carbon Concentration

高碳CZ硅中氧沉淀的两种成核长大机制

The Green Process of Curing Accelerator CZ by Catalytic Oxidation

催化氧化法合成硫化促进剂CZ的绿色工艺

Mathematical Modelling of Crystal Growth in CZ - Si Pulling and Numerical Calculation

直拉硅单晶生长的数学模型与数值计算

The Computer Control System for Single Crystal Growing with a Constant Diameter in CZ Crystal Growing Furnace

CZ单晶炉单晶等径生长计算机控制系统

Behavior of Oxygen and Carbon During Heat Treatment of Cz Silicon Monocrystals

直拉硅单晶热处理过程中氧及碳的行为

On The Carbon Contamination Mechanism of Vacuum Grown Silicon Crystals by Means of CZ method

真空CZ法生长硅单晶碳沾污机理的研究

Development and Application of CZ - 1200 Percussion Drill

CZ-1200型冲击钻机的开发与应用

Global analysis of heat transfer in CZ single crystal growth furnace ( 3 ): effect of free surface shape

单晶生长炉全局热分析（3）&自由界面形状的影响