cf4

Further study found that added the F-gases ( CF4 ) during the process there be such defects occur .

进而研究发现，在去胶过程中加入了含氟气体（四氟化碳）就容易有这种缺陷出现。

The surface modification of PET by CF4 / CH4 plasmas was described in detail .

详细描述了用CF4／CH4混合气体等离子体处理涤纶膜（PET）表面的过程。

The results showed that CH4 / CF4 plasma results in for-mation and growth of polymerized layers on PET surfaces ;

结果表明：碳氟混合气体等离子体在PET表面的沉积速率为正值，在PET表面形成了聚合物；

By using isotropic characteristics of CDE , the article mainly studies the influence of different O2 / CF4 ratio on etching rate of Mo , SiNx and photo resist .

利用化学干法刻蚀各向同性的特点，本文主要研究化学干法刻蚀中不同的O2/CF4比例对Mo、SiNx和光刻胶刻蚀速率的影响。

In a CF4 / Ar inductively coupled plasma , the relationships between SiO2 etching rates and the ion incident angles were investigated , where the ion incident angle controlled by using a Faraday cage .

在CF4/Ar的感应耦合等离子体中，用法拉第筒式的方法研究了SiO2刻蚀速率与不同离子入射角度之间的关系。