VDMOS

Study on the Field Plate Termination Technology of High Voltage VDMOS

高压VDMOS场板终端技术的研究

A VDMOS High Location Switch Circuit with High Speed and Reliability

一种高速可靠的VDMOS高位开关电路

Gate Charge Test for Low Voltage High Current Power VDMOS

低压大电流VDMOS器件栅电荷测量

Study on VDMOS of High Voltage and Large Current

高压大电流VDMOS研究

Temperature Characteristics Model of Threshold Voltage in Small Size VDMOS

小尺寸VDMOS阈值电压温度特性模型

Thermal Analysis and Optimization of Power VDMOS Transistor Based on ANSYS

基于ANSYS的功率VDMOS器件的热分析及优化设计

The design and analysis of breakdown voltage in VDMOS structure

VDMOS结构击穿电压的设计与分析

Study of the relation between the switching performance and the structure of power VDMOS

功率VDMOS开关特性与结构关系

The Optimization Design and Preparation of Power Devices VDMOS

VDMOS功率器件的优化设计与研制

Express Reliability Evaluation of Power VDMOS Based on Arrhenius Model

基于Arrhenius模型快速评价功率VDMOS可靠性

Study on Power VDMOS of High Voltage

高压功率VDMOS管的设计研制

Temperature Distribution of Full - Thermal path of VDMOS

VDMOS全热程的温度分布

Two-dimensional numerical simulation for VDMOS device and the optimization of its typical parameters

VDMOS器件二维数值模拟和典型参数优化分析

Designing low - voltage power VDMOS with virtual fabrication

用虚拟制造设计低压功率VDMOS

VDMOS Optimum Design of Breakdown Voltage and on & Resistance

VDMOS击穿电压与导通电阻的最佳设计

Formation and Effects of Void in VDMOS Die Attach Process

VDMOS器件贴片工艺中气泡的形成机制与影响

The purpose of this thesis is to design and simulate VDMOS power devise model .

因此本课题旨在设计VDMOS功率器件模型并对其进行仿真研究。

Investigation of Quasi-saturation Effect in Small Size Power VDMOS

小尺寸功率VDMOS晶体管中准饱和效应的研究

An Improved Steady-state Physical Model for the Drift Region of VDMOS Silicon Transistor

硅高压VDMOS漂移区静态物理模型的一种改进

The2-D potential model of partial buried oxide VDMOS is obtained in paper .

提出具有部分埋氧结构的功率VDMOS器件的二维势模型。

Design of EPI Parameter for High Voltage VDMOS

高压VDMOS用外延片的外延参数设计

VDMOS is microelectronics and power electronics integrate a new generation of power semiconductor devices .

VDMOS是将微电子技术和电力电子技术融合起来的新一代功率半导体器件。

Breakdown Voltage Characteristics Research in VDMOS

VDMOS器件击穿特性研究

New VDMOS Structure with Reduced Parasitic Capacitance

一种减少VDMOS寄生电容的新结构

SPICE Model of the Equivalent Circuit of VDMOS

VDMOS等效电路的SPICE模型

Simple Theory of Optimum Design of the Epitaxial Layers with the Uniform Doping for VDMOS Transistor

VDMOS均匀掺杂外延区优化设计的简单理论

Design of the Radiation Damage Prognostic Cell for DC / DC Converters Based On VDMOS Transistors Radiation Damage

VDMOS器件损伤的DC/DC转换器辐射预兆单元设计

Although we have made progress in manufacture of VDMOS power device , we have not achieved a mature stage in process .

近年来我国在VDMOS功率器件的研制方面取得了进展，但在工艺方面还不够成熟。

At the end of this paper the differences between the VDMOS in Power IC and discrete device were mentioned in design .

同时还分析了集成电路中的VDMOS与普通分立VDMOS器件在器件结构设计上的主要差别。

Analysis and design of 1.5A/500V VDMOS devices with this termination structure as well as termination field distribution model are presented .

对1.5A/500V功率器件进行了分析和设计，并给出了终端电场分布的模拟结果。