PCRAM
- 网络存储器件;相变随机存储器;相变随机存取记忆体;相变内存
PCRAM-
This showed that the ELD process can satisfy the demands of PCRAM device application , as well as device performance improvement .
通过研究器件的电流-电压特性表明，化学镀方法可以满足器件应用要求。
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Diode is considered to be the best driver of high-density phase change Random Access Memory ( PCRAM ) for its advantage of the cell area .
由于二极管在单元尺寸上的优势，被认为是高密度相变存储器中驱动管的不二之选。
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However , if the technologies preparation is not appropriate , the disturb current will influence the data-veracity and reliability of PCRAM .
如果制备二极管的工艺参数不恰当，则大的漏电流会影响PCRAM存储数据的准确性和长久的保持力。