NMOS

This paper discusses the design method of E / D NMOS high stability voltage reference .

本文讨论E/DNMOS高稳定度基准电压源的设计方法。

A New Double Diffused p - Well nMOS Structure

一种双扩散p阱nMOS器件新结构

Two-Dimensional Numerical Analysis for Breakdown Characteristics in Butt-Joint Channel NMOS Structure

对接沟道NMOS结构击穿特性的二维数值分析

Predicting NMOS device radiation response at different dose rates in γ - ray environment

NMOS器件不同剂量率γ射线辐射响应的理论预估

Switch-Signal Theory for Guiding the Design of nMOS Digital Circuits at Element Level

指导nM0S数字电路元件级设计的开关信号理论

Design and Applications of programmable Neural Network Chip with Floating Gate NMOS Transistors

一种基于浮栅NMOS晶体管的可编程神经网络芯片的设计和应用

A Study on the Threshold Voltage Shift of NMOS Transistors in Low Power CMOS Process

低功耗CMOS工艺中NMOS管阈值电压偏移的研究

Radiation Damage and Annealing Behaviour of Low Energy X-Ray Irradiated NMOS Transistors

低能X射线对NMOST的辐照损伤及退火特性

A Excellent High , Voltage Radiation Hardened NMOS / SOS Driver

一种优良的抗辐射高压NMOS/SOS驱动器件

Chinese Knot The Investigation of NMOS Junction Leakage on BCD Process

BCD工艺中的NMOS管结漏电问题的研究

Integrated circuit . NMOS , asynchronous communications interface adapter .

集成电路。NMOS管，异步通信接口适配器。

Improved Design of Ternary NMOS Output Circuit

三值NMOS电路输出级的改进设计

An Analysis of Multivalued nMOS Basic Circuit Units

多值nMOS基本单元电路分析

Research on the Design of Low-Voltage Low-Power nMOS and ECL Circuits

低电压低功耗nMOS与ECL电路设计研究

Driving and Sampling Technology of High Performance Photoelectrical NMOS Array Detector in the Application of Spectral Measurement

一种应用于光谱测量的高性能光电NMOS阵列探测器的驱动与采集

Performance Degradation of NMOS Device in Oxide Plasma Ambience

氧等离子气氛中NMOS器件的性能退化

Study on Channel Strain in Strained-Si NMOS Transistor by Simulation

应变硅NMOS晶体管沟道应变的模拟研究

The pixel circuit includes only three NMOS transistors .

该结构像素电路非常简单，仅用三个NMOS管；

Research of Annealing Characteristics for NMOS Transistor

NMOS晶体管的退火特性研究

Total dose gamma ray irradiation characteristics of NMOS / SIMOX

NMOS／SIMOX的γ射线总剂量辐照特性

The subthreshold hump of high-voltage nMOS depends on process conditions .

高压nMOS高于最低限度的驼峰取决于工艺条件。

Two-dimensional section structure , profiling of impurity concentration and electrical characteristics of NMOS are gained .

以LDD结构的NMOS器件为例进行了二维工艺仿真，得到了NMOS器件的二维剖面结构、杂质浓度的等值分布描述以及相应的电学特性。

A High Speed NMOS Parallel Multiplier

一种高速NMOS并行乘法器

The design of NMOS quaternary flip-flops and their applications

nMOS四值触发器的设计及其应用

The Design of nMOS Quaternary Flip-flops Based upon the Theory of Clipping Voltage-Switches

基于限幅电压开关理论的nMOS四值触发器设计

An NMOS Folding and Interpolating Circuit and Its SPICE Simulation

一种NMOS型折叠和内插电路及其SPICE分析

A Novel Dual-Gate High Voltage NMOS Integrated Device with NRB-Free

新型无负阻击穿双栅型高压NMOS集成器件

3B & 2T Encoding Technique and nMOS Mixed - valued Circuits

3B2T编码技术与nMOS23混值电路

Structure Analysis of Master / Slave Ternary Flip flops and Its Realization with nMOS Circuits

三值主从触发器结构分析及其nMOS电路实现

E / d NMOS Chopper - Stabilized Operational Amplifier

E/DNMOS斩波稳零运算放大器