MRAM

The Research of MRAM Storage

磁阻式随机存取存储器研究

Research on the Key Technology of MRAM Storage

新型MRAM存储器存取核心技术的研究

Characteristics Analysis and System Design for MTJ MRAM

MTJMRAM的特性分析与设计

There is still a long way to go before MRAM is ready for prime time .

在MRAM存储器达到万事齐备、只欠东风之前还有一段很长的路要走。

The results provide a useful base for the optimization and a more precisely simulation of MRAM in the future work .

该模型为MRAM更精确的器件模拟及器件结构的优化设计工作提供了必要的基础。

Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM

磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转

MRAM is non-volatile memory , it is also power efficient and operates at ultra-high speed , the companies said in a joint statement .

据两家公司的联合声明称，MRAM是一种非易失性存储技术，它具备速度极快和耗电量低的优点。

The MRAM needs to be of a large magnetoresistance ( MR ) effect at room temperature and lower magnetic field , in order to demands of practical application .

而在室温和低磁场下，具有足够大的磁电阻（MR）效应成为实现MRAM器件应用的前提。

MRAM has the advantages of nonvolatility , fast write and read times and low power consumption , and is potentially to be the memory standard .

其中基于巨磁阻效应（GMR）的MRAM以其非挥发性、高速读取和低能耗的特点而有望成为下一代通用存储器，因而是信息存储领域最具吸引力的研究方向之一。

STT-RAM is a second-generation MRAM technology that is said to solve some of the problems posed by conventional MRAM structures .

通常认为STT-RAM是MRAM技术的第二代技术，这项技术解决了常规MRAM的一些问题。

Motorola , IBM , and Hewlett-Packard are all developing magnetic RAM ( MRAM ) which seems poised to become the nonvolatile technology of choice .

摩托罗拉、IBM和惠普都在开发磁性随机存取存储器（MRAM），这种存储器似乎有成为业界优先选择的非易失性存储技术的趋势。

MRAM is considered as the ideal memory of electronic equipments , which is a new magnetic random access memory and has lots of advanced features that traditional memories do not have .

MRAM是一种具有众多优良特性的新型磁性随机存储器，它被认为是电子设备中的理想存储器。

STT-RAM is also said to solve the key drawbacks of first-generation , field-switched magnetic-RAM ( MRAM ) .

同时身为第二代磁电阻式存储技术（MRAM）的STT-RAM据称还可以弥补第一代MRAM的主要缺点。

Hynix and Toshiba said they are merging the necessary resources and expertise from the two companies to minimize risk and to accelerate the pace of MRAM commercialization .

Hynix与东芝表示双方正在整合有关的资源和技术，以降低MRAM商业化的风险，加快将产品推向商业化的步调。

Nowadays GMR material has been successfully used in some sensor applications like high resolution magnetic head used in computer , MRAM , magnetic sensors , current sensors , rotation speed sensors and so on .

目前GMR巨磁阻材料已经在一些传感器技术领域获得了成功的应用，比如：计算机用高密度磁头，磁电阻随机存储器，磁场传感器，电流传感器，转速传感器等等。

A review on the progress of giant magnetoresistance materials and their applications for giant magnetoresistance sensors , read head sensors for high density magnetic recording and MRAM is presented in this paper .

介绍了一种新型的磁性功能材料&巨磁电阻薄膜材料，并就它在巨磁电阻传感器、高密度磁记录读磁头以及巨磁电阻随机存储器等电子元器件上的应用作了一些论述。

MRAM works by etching a grid of criss-crossing wires on a chip in two layers-with the horizontal wires being placed just below the vertical wires .

磁性随机存取存储器（MRAM）的运行是通过在两层芯片上蚀刻十字交叉形导线格栅&横向导线在垂直导线之下。

The application devices of Magnetic electronics giant magnetoresistance and tunnel magnetic resistance of Magnetic electronics are spin valve , magnetic random access memory ( MRAM ), spin transistors and so on .

磁电子学中巨磁电阻和隧道磁电阻的应用的器件有自旋阀，磁随机访问存储器（MRAM）和自旋晶体管等。

This paper introduces the giant ( GMR ) and tunneling ( TMR ) magnetoresistive effect . The recent application and development of the magnetic random access memory ( MRAM ) for computer are discussed also .

介绍了巨磁电阻（GMR）及隧道磁电阻（TMR）效应，讨论了计算机磁随机存储器（MRAM）的最新应用开发。

IBM , collaborating with Germany 's Infineon Technologies , has developed a one megabit ( million bit ) MRAM chip at its laboratories in East Fishkill , New York .

IBM与德国英飞凌技术公司合作，在其位于纽约东费什基尔的实验室开发出一块1兆（百万位）MRAM芯片。

Tunneling magnetoresistance ( TMR ) discovered in magnetic tunneling junction ( MTJ ) has high sensitivity and adjustable junction resistance , so it has potential to be applied in new MRAM devices .

磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。