High-K

Wide-band semiconductors and high-K dielectrics are two of the cutting-edge research focuses in microelectronics industry .

宽带隙半导体材料和高介电常数材料是当今微电子领域的前沿研究课题。

Preparation and Property of High-k HfO_2 Gate Dielectric Materials

高介电常数HfO2栅介质的制备及性能

So to find new high-K gate dielectric material has become an international new research project .

因此寻找新型高k栅介质材料已成为国际前沿性的研究课题。

Simulation and Analysis of Electronic Characteristic of MOSFET with High-k Dielectric

高k栅介质MOSFET电特性的模拟分析

Latest Development of Integration of High-k / Dual Metal Gate in Gate First Process

先栅工艺中高K/双金属栅集成研究新进展

Therefor a new high-k dielectric defect characterization method is urgent needed .

迫切需要新型的高k介质缺陷表征方法。

Research Progress in Electrical Properties of High-k HfO_2 Gate Dielectric Films

高k值HfO2栅介质材料电学特性的研究进展

Effect of Annealing on Al_2O_3 Amorphous High-k Gate Dielectric Films Properties

退火对非晶Al2O3高k栅介质薄膜特性的影响

Synthesis , structure and interfacial characteristics of high-k HfO_2 thin films

高介电HfO2薄膜的制备及其结构和界面特性研究

Study on Surface and Interfacial Characteristics of HfO_2 High-k Gate Dielectric

HfO2栅介质的表面界面特性研究

The Progress and Problems of High-k Materials

High-k材料研究进展与存在的问题

Preparation and characterization of ZrO_2 thin films as novel high-K gate dielectrics

新型高K栅介质ZrO2薄膜材料的制备及表征

Dielectric properties of high-k zirconium oxide films prepared by reactive RF magnetron sputtering method

反应射频磁控溅射制备高k氧化锆薄膜及介电性能的研究

The Development of Hf Based High-K Gate Dielectrics

Hf基高K栅介质材料研究进展

Recent Researching Trends in the High-k Insulating Layer

高k绝缘层研究动态

In this dissertation , we will investigate the application of several high-k dielectric and metal gate process technologies .

在本论文中，吾人将探讨数种高介电系数介电层与金属闸极的研究与应用。

In the end , this paper introduces a MOSFET fabricated by high-K gate dielectric .

介绍了一款由Hf基高K介质材料作为栅绝缘层制作的MOSFET。

Preparation of large-scale high-k BaTiO_3-based ceramics and evaluating insulating resistance

大型钛酸钡基高介电陶瓷制备和绝缘电阻评价

High-K Ferroelectric Films and Multilayers Fabricated by Pulsed Laser Deposition

脉冲激光法制备高介电系数铁电薄膜和多层膜

Fabrication and properties of the Y-doped Al_2O_3 high-k gate dielectric films

Y掺杂Al2O3高k栅介质薄膜的制备及性能研究

The Fabrication and Memory Characteristics of Ge Nano - crystals in High-k Dielectrics

埋嵌在高k介质中Ge纳米晶的制备及其电荷存储特性的研究

Doubtlessly , successful development and application of the future high-k materials will remarkably drive the development of the semiconductor technology .

可以说，将来理想的High-k介质的成功研究与应用必将极大地推动半导体技术的快速发展。

Study on Electrical Characteristics of Ge-pMOSFET with Ultrathin High-k Gate Dielectrics

超薄高k栅介质Ge-pMOSFET的电特性研究

Application of High-k Dielectrics to Floating Gate Nonvolatile Memory

高k介质在浮栅型非挥发性存储器中的应用

Therefore , the works on high-k materials in these years have become the most crucial research focuses in the microelectronics field .

正因为如此，这些年来有关High-k介质的研究已经成为微电子领域里最关键的热门课题。

Structural Study of Molecular Beam Epitaxial Grown Gd_2O_3 and Nd_2O_3 High-k Nano-thick Film

分子束外延Gd2O3、Nd2O3高介电纳米薄膜的结构研究

Soft Breakdown Characteristics of Ultra-thin High-K HfO_2 Gate Dielectrics

超薄HfO2高K栅介质薄膜的软击穿特性

The values of the intrinsic breakdown field of many important binary compound semiconductors and high-k gate dielectrics are calculated .

基于文章提出的关系式，计算了多种重要的二元化合物半导体及高k栅介质的本征击穿电场预期值。

One Cenozoic discontinuous arc-shaped high-K magmatism belt occurs along the JRRSZ .

沿金沙江-红河构造带断续展布着一条弧形的新生代高钾岩浆活动带。

The formation of high-K magma was mainly controlled by batch partial melting , but affected by fractional crystallization .

高钾岩浆的形成主要受控于批式熔融模式，但也遭受分离结晶作用的影响。