HEMT

Temperature reliability is an important aspect of HEMT reliability research .

温度可靠性是HEMT器件可靠性研究的重要方面。

Study on Transport Properties of Two Dimensional Electron Gas in HEMT Structure

HEMT结构材料中二维电子气的输运性质研究

A Novel Analytical Current Voltage Characteristics Model for HEMT Devices

一种新的HEMT器件I－V特性解析模型

Extraction of GaN HEMT Small Signal Equivalent Circuit Model Using an Improved Algorithm

用改进算法提取GaNHEMT小信号等效电路模型

Low Noise Amplifier Design and Achieve Based on GaAs HEMT

基于GaAsHEMT的低噪声放大器设计与实现

Calculations of DC Characteristics , Microwave and Noise Parameters of HEMT

HEMT直流特性、微波和噪声参量的计算

The heat resistance of GaN HEMT is also studied .

论文对GaN基HEMT器件的热阻问题进行了研究。

Research Progress on the High Temperature Characteristics of AlGaN / GaN HEMT

AlGaN/GaNHEMT高温特性的研究进展

Two-Dimensional Numerical Simulation of HEMT and Interface States Effect on HEMT

HEMT及其界面态效应的二维数值模拟

Effect of Dielectric and Surface Treating on the Characteristic of GaN HEMT

介质膜性质及表面处理对GaNHEMT特性的影响

Improved HEMT device noise equivalent circuit model

改进的HEMT器件噪声等效电路模型

A Study on Current Collapse in GaN HEMT 's Induced by Pulsed Stress

脉冲条件下GaNHEMT电流崩塌效应研究

Influence of Interface States on Characteristics of AlGaAs / GaAs HEMT Direct Current Output

界面态对AlGaAs/GaAsHEMT直流输出特性的影响

Dependence of Electron Mobility of HEMT on Parameters of Device

HEMT电子迁移率与器件参数关系

Design and Implementation of a Compact HEMT Oscillator at Ku Band

小型化Ku波段HEMT振荡器的设计与实现

Research on the Materials Epitaxial Technology of AlGaN / GaN HEMT

AlGaN/GaNHEMT材料外延技术研究

The Low Temperature DC Characteristics of AlGaN / GaN HEMT

AlGaN/GaNHEMT低温直流特性研究

Modeling and Application of Power GaN HEMT

GaN功率器件模型及其在电路设计中的应用

Fabrication of Millimeter-Wave Low - Noise HEMT 's Short Gate

毫米波低噪声HEMT的短栅制作工艺

Simulation of DC Characteristics of AlGaN / GaN HEMT for three variant vertical structure

AlGaN/GaNHEMT不同纵向结构的直流特性仿真

An Experimental Investigation into Transportation Process of Trapped Surface Charges of GaN-Based HEMT 's

GaN基HEMT器件的表面陷阱电荷输运过程实验研究

The math physical model of HEMT and PHEMT has been presented in this paper .

给出了HEMT和PHEMT的数学－物理模型。

Study of AlGaN / GaN HEMT high temperature anneal in N_2

AlGaN/GaNHEMT在N2中高温退火研究

Study on High Transconductance Characteristics of AlGaN / GaN HEMT

支撑技术AlGaN/GaNHEMT高跨导特性的研究

Simulation on Gate Structure of Ka Band AlGaN / GaN HEMT

Ka波段AlGaN/GaNHEMT栅结构仿真研究

Two-Dimensional Quantum Model for δ - Doped AlGaAs / GaAs HEMT

δ掺杂AlGaAs/GaAsHEMT的二维量子模型

But there are not many researches which use the HEMT structure as a sensitive element of accelerometers .

而将HEMT结构用于加速度计敏感单元的研究并不多见。

The progress on the performance of AlGaN / GaN HEMT under high temperature is reviewed .

回顾了在高温条件下AlGaN/GaNHEMT器件特性的研究进展。

A New Parameter-extraction Method for HEMT 's Small-signal Model

一种新的HEMT小信号模型参数提取方法

The Progress of The Millimeter-Wave Low-Noise HEMT 's Using Strained Layer Quantum Wells

采用应变层量子阱的毫米波低噪声HEMT的进展