3v

3V Dual RS-232 Transceiver with LCD Supply and Contrast Controller Power Supplies for Power System Communication

带LCD供电电源和对比度调节器的3V双RS232收发器&MAX3325芯片原理与应用

A field electron emission was observed at bias voltage as low as 3V and a possible mechanism of field emission was discussed .

观察到低起始阈值的场发射现象，对可能的场发射机理进行了讨论。

A theoretical study of the absorption spectra of d3 ~ ions in the c_ ( 3v ) - crystal field

C（3v）晶场中d~3离子吸收谱的理论研究

The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage .

在输出级3V直流偏置时最大输出电压摆幅可达25Vpp。

Objective To evaluate the value of three vessels and trachea ( 3V + T view ) view in diagnosing fetal ventricular hypoplasia .

目的探讨胎儿三血管气管平面（3V+T切面）在胎儿心室发育不良诊断中的价值。

Results : The NOS positive CSF contacting neurons were mainly at the cerebral aqueduct and the third ventricle ( 3V ) .

结果：NOS阳性触液神经元主要见于中脑水管和第三脑室（3V）。

The proportion of 6V : 1V : 3V or 60 % peat was good for seedling quality .

草炭：蛭石：珍珠岩以6V：1V：3V比例混和较好，40d秧苗素质及成苗率较高。另外，在不同配比中，以草炭占60%处理较好。

The functions of both the analog and digital portions have met the intended requirements . The driving current is 15 mA when operating with 3V supply .

模拟线路的技术指标和数字线路的功能均达到预期的使用要求，3V工作时的驱动电流可达15mA。

The result show that the leakage current density of the thin film under + 3V is lower than 10-9A / cm2 , meeting the need for application .

研究表明，Bi4Ti3O12薄度的漏电流密度在+3V偏压下低于10-9A/cm2，满足器件应用的要求。

The design of a 3V single power supply CMOS analog / digital mixed ASIC for flammable gas alarming is described and the main process parameters are presented . The circr .

本文介绍一种单电源电压小于3V的低压CMOS模拟与数字混合ASIC&瓦斯报警电路的设计，并给出制造工艺的主要数据。

When the electric field intensity is 3v / , the tunability of the thin film is about 30 % and the loss tangent is about 20 % under room temperature .

室温下，当直流电场为3v/时介电系数变化率约为30%，介质损耗约为20%。

A square shape Hall plate was incorporated into the conditioning circuit . The absolute sensitivity of the Hall plate is around 704mV / T at 3V bias voltage .

该电路采用了方形霍尔元件，绝对灵敏度为704mV/T；

The inhibition of the mixture of chloroform-enthanol ( 2 ∶ 3v / v ) on this enzyme is noncompetitive .

氯仿－乙醇混合液（2∶3／v∶v）对该酶的抑制属于非竞争性抑制。

Perturbation matrices of 3d ~ 4 configuration in the c_ ( 3v ) symmetry crystal feild and its application to crystal cscrcl_3 and cscrbr_3

3b~4组态在C（3v）晶场中的微扰矩阵及对CsCrCl3和CsCrBr3的应用

The overall hardware design scheme is performed , such as DSP 3 . 3V power , voltage and current sampling module , IGBT driving circuit , I / O signal processor , fault detection module and COM circuit etc.

对系统硬件设计的DSP3.3V电源的获取、电压电流采样模块、IGBT驱动、一般I／O信号的处理、故障监测和串口通信电路进行了研究分析。

Because of the large scope of gas sensor resistance changing , may be to the megohm , a series range of the signal attenuation are designed to ensure that the voltage between 0 ~ 3V . 2 .

由于气体传感器的电阻变化范围大，可能上兆欧，所以设计了一系列量程来将信号衰减，保证电压在0~3V之间。

The outside of this chip adopts BOOST structure to drive up to seven white LEDs with the input voltage ranging from 3V to 5V . Series connection of the LEDs provides identical LED current resulting in uniform brightness .

电路的电源输入在3V～5V变化，采用BOOST电路结构升压，在极限情况下最多可驱动七个白光LED，由于LED串联，因此各LED电流完全匹配，亮度一至。

The measuring principle of circularity error is studied , which shows that the angle of V shaped iron determines the actual measuring result of various work pieces , and measuring with " 3V " iron can improve the authenticity of measuring results .

对零件圆度误差检测原理进行了研究，表明V型铁夹角决定了检测的效果，而用三V法测量可达到比较真实的圆度误差。

As a potential application , efficient field emission is observed from the nc-Si film , and the turn-on field is about 3V / μ m at 0.1 μ A / cm 2 of current density , which is close to carbon nanotube film 's.

成功观察到该薄膜具有很好的场发射特性，在01μA/cm2电流密度下，其开启电场为3V/μm，接近碳纳米管的11V/μm。

MgO was 1.5 × 10 - 7 A ? cm 2 at an applied voltage of 3V . Such epitaxial Ba 0.65 Sr 0.35 TiO 3 thin films are the excellent materials for preparing uncooled infrared focal plane arrays .

当外加偏置电压为3V时，BST薄膜的漏电流密度为1.5×10-7Acm2.该薄膜可作为制备新型非制冷红外焦平面阵列和先进非制冷红外热像仪的优选材料。

The post SBD current-voltage relationship of I_g and I_b in a larger voltage range ( - 4 ~ + 3V ) is simulated with the PLC formula , which is simple for the study of ultra-thin gate oxide reliability .

该公式能够在较大的电压范围（-4～+3V）模拟氧化层SBD后的栅电流和衬底电流的电流电压特性，为超薄栅氧化层可靠性的研究提供了一个较为简便的公式。

In the proposed circuit , the SPD output photo-current is converted from 0.1 ~ 100 μ A into analog output voltage from 0 ~ 3V , and thus , it is easily to be connected with the analog port of MCU .

该电路能将蓝硅SPD输出的0.1~100μA范围光电流转换成0~3V的模拟电压输出，方便地实现了与MCU的连接。

In order to expound the sulfur-resistant behavior , catalysts such as CuO and 5CuO + V 2O 5 were prepared and studied as contrast . It 's found that formation of Cu 3V 2O 8 strengthened the sulfur-resistant effect greatly .

为了进一步阐明催化剂的抗硫机理，以CuO，5CuO+V2O5催化剂抗硫性作为对比，发现复合催化剂中Cu3V2O8的形成大大增强了催化剂的抗硫性能。

The field emission was measured in high vacuum chamber after introducing an anode that was applied a high voltage to collect the emitted electron . When the gate bias was higher than about 3V , the electron emission was observed . The electron emission follows F-N theory .

在高真空腔内进行的场发射测试结果表明：当栅极电压高于3V时就观察到了电子发射现象，而且它的发射特性符合场发射的F-N理论，但发射效率低。