静电泄漏

  • 网络electrostatic discharge;ESD
静电泄漏静电泄漏
  1. CMOS集成电路静电泄漏实验分析

    Analysis for Electrostatic Discharge Experiment of CMOS IC

  2. 材料的静电电荷衰减速度反映了其静电泄漏性能,所以可以用电荷衰减时间来评价材料的防静电性能。

    The electrostatic charge attenuation velocity of material reflects its leaking performance , electrostatic charge attenuation time is used to evaluate anti-electrostatic performance of material .