自旋向下

它能一分为二的，事实告诉我们，电子一定有某种新的性质，我们叫它自旋向上或者自旋向下。

And that the fact that it split into two was telling them that there must be some new property to the electron , and what we call that now is either being spin up or spin down .

半金属铁磁体因为自旋向上电子和自旋向下的电子在费米能级处不同的性质，具有特殊的应用，在本章中简要介绍了半金属铁磁体的发展和具有半金属性材料的种类。

The half metallic ferromagnets due to spin up electrons and spin down electrons have different nature around the Fermi level , and have special applications . Then the development and types of half metallic ferromagnets are introduced briefly .

自旋向下电子的位相发生改变，与自旋向上电子的隧穿系数之间的位相差增大；

The phase of the spin-down electrons moves so the phasic difference between the spin-up electrons and spin-down ones increases .

相对于自旋向下电子态，自旋向上电子态的透射系数比自旋向下电子态的更复杂并包含更多的共振峰。

Transmission for spin-down electrons is smoother than that for spin-up electrons , which is more complex and includes more resonant peaks .

我们发现当两端铁磁电极处于平行磁化结构时，如果自旋向下电子对应的有效点间耦合以及点与电极耦合比较小，自旋向下共振能级附近的热电转换效率就会很大地增强。

It is found that in the parallel configuration , the thermoelectric efficiency can reach a considerable value around the spin-down resonance levels when the effective interdot coupling and the tunnel coupling between the QDs and the leads for the spin-down electrons are small .

磁击穿发生在自旋向上和向下的两片Fermi面之间。

Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface .

s层也是这样，自旋向上，自旋向下。

Likewise with2s , spin-up , spin-down .

我们发现自旋向上和自旋向下电子对电导和散粒噪声的贡献是不同的。

We find that spin-up and spin-down electrons have different contributions to the conductance and the shot noise .

施加磁场后，自旋向上和自旋向下两电子通道的对称破缺导致磁阻巨幅下降的现象。

Applied magnetic field , the symmetric broken between spin-up and spin-down channels gives rise to the great decrement of resistance .

耦合的相位和振幅被系统的电子结构、电子自旋向上或自旋向下的费米面的几何特征所约束。

The Phase and the amplitude of couple are restrained by the electronic structural and specific property of system , especially the geometry feature of Femi surface of the up-and down-spin .

锯齿状石墨烯纳米条带是半导体，费米能附近有两个能量简并的边缘电子态，分别被自旋向上通道和自旋向下通道所占据。

Zigzag edge graphene nano-ribbon is semiconductor with two degenerate electronic edge states near the Fermi level occupied by different spin channel each other .

在外加磁场的作用下，自旋向上的电子与自旋向下的电子具有不同的隧穿系数。

The tunneling coefficients of electrons with spin up and spin down are different when a magnetic field is applied .